US4065851A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making metallic support carrier for semiconductor elements
Assignee: WC Heraus GmbH and Co KG
•
Filing: 1976-11-03
•
Granted: 1978-01-03
•
Expires: 1996-11-03
Abstract
Abstract To improve the bonding layer for connecting wires to semiconductor chips with contact fingers, or contact strips, on a substrate carrier, the bonding layer is formed as spongy, microporous structure, applied to discrete positions of the contact strips by screen printing, and secured to the metallic connecting strip by a diffusion zone. Preferably, the bonding layer comprises a metal of gold, palladium, silver, aluminum and copper, or an alloy of at least two of these metals, or a base alloy of one of these metals, for example gold applied as a gold paste having an average grain size of less than 5 micro-meters, the layer being between 2 to 30 micrometers thick, preferably 3 to 10 micrometers. The metal is part of a paste of the metal in an evaporative organic carrier. After screen printing, the carrier is eliminated by heating; subsequent heating converts the metal to a spongy microporous structure bonded to the substrate carrier by a diffusion zone.
Inventors
- 👤 Franz Kummer
- 👤 Gerhard Mai
- 👤 Rolf Ruthardt
- 👤 Horst Thiede
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 05:05
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/456; H10W70/457; H10W90/00; H10W90/811; H10W72/00; H10W72/01; H10W72/0198; H10W72/071; H10W72/075; H10W72/50; H10W72/531; H10W72/533; H10W72/534; H10W72/541; H10W72/5449; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/59; H10W72/90; H10W72/951; H10W72/952; H10W90/701; H10W90/751; H10W90/756; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
142 words
Method to make a metallic carrier for semiconductor elements and to form attachment terminals for lead wires for connection to the semiconductor structure comprising forming a metal substrate with contact fingers; screen printing on at least one contact finger of the metal substrate at discrete bonding positions thereon, a paste comprising a bonding metal in finely distributed form in an organic evaporative carrier; heat treating said substrate with said printed paste thereon to eliminate said carrier; and further heat treating the remainder of said paste from which the carrier was eliminated, and the substrate, at a temperature sufficiently high to effect diffusion of said bonding metal with the contact finger of said substrate to form an electrical and mechanical bond in form of a diffusion zone and to convert the bonding layer material of said discrete positions to a spongy, microporous structure.
Claim 2
Dependent Claim
142 words
Method to make a metallic carrier for semiconductor elements and to form attachment terminals for lead wires for connection to the semiconductor structure comprising forming a metal substrate with contact fingers; screen printing on at least one contact finger of the metal substrate at discrete bonding positions thereon, a paste comprising a bonding metal in finely distributed form in an organic evaporative carrier; heat treating said substrate with said printed paste thereon to eliminate said carrier; and further heat treating the remainder of said paste from which the carrier was eliminated, and the substrate, at a temperature sufficiently high to effect diffusion of said bonding metal with the contact finger of said substrate to form an electrical and mechanical bond in form of a diffusion zone and to convert the bonding layer material of said discrete positions to a spongy, microporous structure.
Claim 3
Dependent Claim
80 words
Method according to claim 1, wherein said bonding metal is gold having an average particle size of less than 5 micrometers, dissolved in an organic solvent; said first heat-treating step comprises heating the substrats, with said gold paste printed thereon, to a temperature of about 400° C to dry the paste and to eliminate the organic carrier; and thereafter heat-treating the substrate and the heat-treated carrier at a temperature of about 650° C, for a time sufficient to effect diffusion.
Claim 4
Dependent Claim
20 words
Method according to claim 2, wherein said second heat-treating step, to effect diffusion, is carried out in a reducing atmosphere.
Claim 5
Dependent Claim
47 words
Method according to claim 2, wherein said second heat treatment step is carried out for a time, and at a temperature, sufficient to sinter the gold particles of the gold paste to a microporous layer of spongy structure having a thickness of between 3 to 10 micrometers.
Claim 6
Dependent Claim
53 words
Method according to claim 1, wherein said substrate is supplied in form of a ribbon or tape, and the step of forming the contact fingers comprises punching the tape with the bonding layer applied to discrete positions or zones on said tape, only, after said final heating step, to form a lead frame.
Claim 7
Dependent Claim
34 words
Method according to claim 1 wherein the material of the bonding layer comprises an alloy of at least two of the metals selected from the group consisting of gold, palladium, silver, aluminum and copper.
Claim 8
Dependent Claim
35 words
Method according to claim 1 wherein the material of the bonding layer comprises a base alloy of a metal selected from at least one of the group consisting of gold, palladium, silver, aluminum and copper.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-01-02 | 1981-07-04 | 1982-01-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-01-02 | 1985-07-04 | 1986-01-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-01-02 | 1989-07-04 | 1990-01-03 | $7700.00 | Window Closed / Lapsed |