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US4064492A
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Virtually nonvolatile random access memory cell
Assignee: Individual
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Filing: 1976-10-05
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Granted: 1977-12-20
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Expires: 1996-10-05
Abstract
Abstract A dynamic, virtually nonvolatile random access memory (RAM) storage cell is provided by storing information in a Nonvolatile Charge Injection Device (NOVCID), first in volatile form, then by an electric signal transferring the stored intelligence into a nonvolatile form from which it may late be recovered. Since only on external command is the information transferred into the nonvolatile storage mode, the memory is described as a virtually nonvolatile RAM.
Inventors
- 👤 Fritz L. Schuermeyer
- 👤 Charles R. Young
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:50
CPC Classifications
G; G11; G11C; G11C14/00; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404; G11C16/00; G11C16/02; G11C16/04; G11C16/0466; H; H10; H10B; H10B12/00; H10D; H10D30/00; H10D30/60; H10D30/69
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
237 words
The method of storing, and recovering information stored in nonvolatile form, in a Nonvolatile Charge Injection Device (NOVCID) comprising a well pumped Metal-Nitride-Oxide-Semiconductor, having a word line connection, a bit line connection, and a substrate connection, said method comprising the steps of: a. placing approximately a +5 volt potential on the said word line connection, the said bit line connection, and the said substrate connection, thereby placing the said NOVCID in a standby mode; b. applying a pulse of approximately zero voltage to the said word line connection placing the NOVCID in accumulation; c. placing approximately a +10 volt pulse on the said word line, simultaneously with the placing of approximately +5 volts on the said bit line connection for writing into the NOVCID a "zero", or the simultaneous placing of approximately +10 volts on the said bit line connection for writing into the NOVCID a "one"; d. transferring the said "zero" or "one" into stored nonvolatile form by applying approximately a +25 volt pulse to the said word line connection; and e. recovering the said nonvolatile stored information by first applying approximately 0 volts to the said word line connection and approximately +5 volts to the said substrate connection placing the NOVCID in accumulation, then applying approximately a +10 volt pulse to the said word line connection, while sensing the charge on the said bit line connection which is indicative of the said nonvolatile stored information.
Claim 2
Independent Claim
237 words
The method of storing, and recovering information stored in nonvolatile form, in a Nonvolatile Charge Injection Device (NOVCID) comprising a well pumped Metal-Nitride-Oxide-Semiconductor, having a word line connection, a bit line connection, and a substrate connection, said method comprising the steps of: a. placing approximately a +5 volt potential on the said word line connection, the said bit line connection, and the said substrate connection, thereby placing the said NOVCID in a standby mode; b. applying a pulse of approximately zero voltage to the said word line connection placing the NOVCID in accumulation; c. placing approximately a +10 volt pulse on the said word line, simultaneously with the placing of approximately +5 volts on the said bit line connection for writing into the NOVCID a "zero", or the simultaneous placing of approximately +10 volts on the said bit line connection for writing into the NOVCID a "one"; d. transferring the said "zero" or "one" into stored nonvolatile form by applying approximately a +25 volt pulse to the said word line connection; and e. recovering the said nonvolatile stored information by first applying approximately 0 volts to the said word line connection and approximately +5 volts to the said substrate connection placing the NOVCID in accumulation, then applying approximately a +10 volt pulse to the said word line connection, while sensing the charge on the said bit line connection which is indicative of the said nonvolatile stored information.
Claim 3
Independent Claim
141 words
The method of transferring to nonvolatile form and recovering information written in volatile form in a Nonvolatile Charge Injection Device (NOVCID) having a field plate, a n+ area, and a substrate, said method comprising the steps of: a. applying a pulse of approximately +25 volts and approximately 1 millisecond duration to the said field plate transferring the said volatile written information into nonvolatile form; and b. recovering the said nonvolatile stored information by first placing the NOVCID Into accumulation by applying approximately zero volts to the said field plate and approximately +5 volts on the said substrate, then applying a pulse of approximately +10 volts and approximately 50 nsec duration on the said field plate while sensing the magnitude of the said charge on the said n+ area, the magnitude of the said charge being indicative of the said stored information.
Claim 4
Independent Claim
141 words
The method of transferring to nonvolatile form and recovering information written in volatile form in a Nonvolatile Charge Injection Device (NOVCID) having a field plate, a n+ area, and a substrate, said method comprising the steps of: a. applying a pulse of approximately +25 volts and approximately 1 millisecond duration to the said field plate transferring the said volatile written information into nonvolatile form; and b. recovering the said nonvolatile stored information by first placing the NOVCID Into accumulation by applying approximately zero volts to the said field plate and approximately +5 volts on the said substrate, then applying a pulse of approximately +10 volts and approximately 50 nsec duration on the said field plate while sensing the magnitude of the said charge on the said n+ area, the magnitude of the said charge being indicative of the said stored information.
References Cited (Backward Citations)
US3911464A
Cited
US3916390A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-12-19 | 1981-06-20 | 1981-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-12-19 | 1985-06-20 | 1985-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-12-19 | 1989-06-20 | 1989-12-20 | $7700.00 | Window Closed / Lapsed |