Patent US4064289A successfully refreshed from Google Patents.
US4064289A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a semiconductor device
Assignee: Hitachi Ltd
•
Filing: 1975-08-21
•
Granted: 1977-12-20
•
Expires: 1995-08-21
Abstract
Abstract Method of making a semiconductor device which includes applying a solution of a heterocyclic ring-containing polymer in an organic solvent to a desired surface of a semiconductor body and removing the organic solvent from the solution by heat thereby to form a coating of a polymer on the surface, wherein the polymer is a reaction product of a diamine represented by the formula: <IMAGE> with a tetracarboxylic acid or anhydride of it. Since the coating exhibits good thermal stability and good electrical properties when applied to the surface of the semiconductor, it is useful as a passivating film.
Inventors
- 👤 Takashi Yokoyama
- 👤 Yasuo Miyadera
- 👤 Nobuhiko Shito
- 👤 Hiroshi Suzuki
- 👤 Yoshiaki Wakashima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 21:51
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; C; C08; C08L; C08L79/00; C08L79/04; H01; H01B; H01B3/00; H01B3/18; H01B3/30; H01B3/303; H01B3/306; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W74/40; H10W74/47; H10P14/63; H10P14/6326; H10P14/6342; Y; Y10; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31721
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
103 words
A method of making a semiconductor device in which a desired surface of a pn-junction of a semiconductor body is coated with a polyimide resin, which comprises: applying a solution of the polyimide resin in an organic solvent onto the surface; and removing the solvent from the solution by heating to form a coating of the resin on the surface, wherein the polyimide resin is a heterocyclic ring-containing polymer that is a reaction product at 80° C or above of a diamine represented by the formula: ##STR3## with a tetracarboxylic acid, the heterocyclic rings of the polymer being substantially closed in the solution.
Claim 2
Independent Claim
103 words
A method of making a semiconductor device in which a desired surface of a pn-junction of a semiconductor body is coated with a polyimide resin, which comprises: applying a solution of the polyimide resin in an organic solvent onto the surface; and removing the solvent from the solution by heating to form a coating of the resin on the surface, wherein the polyimide resin is a heterocyclic ring-containing polymer that is a reaction product at 80° C or above of a diamine represented by the formula: ##STR3## with a tetracarboxylic acid, the heterocyclic rings of the polymer being substantially closed in the solution.
Claim 3
Dependent Claim
28 words
A method of making a semiconductor device according to claim 1, wherein the solution contains the heterocyclic ring-containing polymer in an amount of 5 to 10% by weight.
Claim 4
Dependent Claim
31 words
A method of making a semiconductor device according to claim 1, wherein the solvent is selected from the group consisting of cresol, nitrobenzene, phenol, sulfolane, methylsulfolane, dimethylacetamide, N,N-dimethylformamide, and hexamethylphosphor amine.
Claim 5
Dependent Claim
32 words
A method of making a semiconductor device according to claim 1, including the step of attaching electrical leads to said semiconductor body at least prior to said steps of coating and removing.
Claim 6
Dependent Claim
38 words
A method of making a semiconductor device according to claim 1, wherein the heterocyclic ring-containing polymer is a polyimide obtained by the reaction of 4,4'-di(m-aminophenoxy) diphenylsulfone with a tetracarboxylic acid at a temperature of 80° C or above.
Claim 7
Dependent Claim
46 words
A method of making a semiconductor device according to claim 1, wherein the tetracarboxylic acid is at least one member selected from the group consisting of 3,3',4,4'-benzophenonetetracarboxylic acid; 4,4'-sulfonyldiphthalic acid; 3,3',4,4'-diphenylethertetracarboxylic acid; cyclopentanetetracarboxylic acid; butanetetracarboxylic acid; ethylenebistrimellitate and the anhydrides, diesters, tetraesters and diester dihalides thereof.
Claim 8
Dependent Claim
43 words
A method of making a semiconductor device according to claim 6, wherein the tetracarboxylic acid is further mixed with a member selected from the group consisting of 3,3',4,4'-diphenyltetracarboxylic acid; 2,3,6,7-naphthalenetetracarboxylic acid; 1,4,5,8-naphthalenetetracarboxylic acid; 3,4,9,10perylenetetracarboxylic acid; and anhydrides, diesters, tetraesters and diester dihalides thereof.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-12-19 | 1981-06-20 | 1981-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-12-19 | 1985-06-20 | 1985-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-12-19 | 1989-06-20 | 1989-12-20 | $7700.00 | Window Closed / Lapsed |