Gate turn off semiconductor rectifiers

Claim 2

A gate controlled rectifier comprising: a body of semiconductor material including two emitter regions and two base regions, each base region being disposed between an emitter region and the other of said base regions, adjacent regions being of opposite type conductivity and having a PN junction therebetween a gate electrode connected to one of said base regions, and means for increasing the avalanche breakdown capability of said rectifier for voltages applied between said one base region and the emitter region adjacent thereto, said means comprising: a. a layer of semiconductor material of the same conductivity type as that of said adjacent emitter region between said one base region and said adjacent emitter region, in which the average concentration of dopant atoms of each conductivity type, including both the compensated and uncompensated atoms thereof, is less than the maximum concentration of the majority type dopant atoms in said one base region, and b. said layer having a thickness adequate to increase said avalanche breakdown capability to a voltage greater than the voltage drop through said one base region caused by the diversion of current within said one base region from said adjacent emitter region to said gate electrode said current being generated by a turn-off voltage applied to said gate electrode.

Claim 3

A gate controlled rectifier comprising: a body of semiconductor material including two emitter regions and two base regions, each base region being disposed between an emitter region and the other of said base regions, adjacent regions being of opposite type conductivity and having a PN junction therebetween, a gate electrode connected to one of said base regions, and means for increasing the avalanche breakdown capability of said rectifier for voltages applied between said one base region and the emitter region adjacent thereto, said means comprising: a. a layer of semiconductor material between said one base region and said adjacent emitter region in which the average concentration of dopant atoms of each conductivity type, including both the compensated and uncompensated atoms thereof, is less than the maximum concentration of the majority type dopant atoms in said one base region, b. said layer having a thickness adequate to increase said avalanche breakdown capability to a voltage greater than the voltage drop through said one base region caused by the diversion of current within said one base region from said adjacent emitter region to said gate electrode said current being generated by a turn-off voltage applied to said gate electrode, and c. the conductivity within said layer increasing in the direction away from said one base region.

Claim 4

A gate controlled rectifier comprising: a body of semiconductor material including two emitter regions and two base regions, each base region being disposed between an emitter region and the other of said base regions, adjacent regions being of opposite type conductivity and having a PN junction therebetween, a gate electrode connected to one of said base regions, and means for increasing the avalanche breakdown capability of said rectifier for voltages applied between said one base region and the emitter region adjacent thereto, said means comprising: a. a layer of semiconductor material between said one base region and said adjacent emitter region in which the average concentration of dopant atoms of each conductivity type, including both the compensated and uncompensated atoms thereof, is less than the maximum concentration of the majority type dopant atoms in said one base region, b. said layer having a thickness adequate to increase said avalanche breakdown capability to a voltage greater than the voltage drop through said one base region caused by the diversion of current within said one base region from said adjacent emitter region to said gate electrode said current being generated by a turn-off voltage applied to said gate electrode, and c. the conductivity within said layer increasing in the direction away from said one base region.

Claim 5

A gate controlled rectifier comprising: a body of semiconductor material including two emitter regions and two base regions, one of said emitter regions having two spread-apart portions, each base region being disposed between a respective emitter region and the other of said base regions, adjacent regions being of opposite type conductivity and having a PN junction therebetween, a gate electrode connected to one of said base regions on opposite sides of said spaced-apart portions of said one emitter region to provide separate paths for current through said one base region from each of said opposite sides, and means for increasing the avalanche breakdown capability of said rectifier for voltages applied between said one base region and said one emitter region, said means comprising: a. a layer of semiconductor material between said one base region and said one emitter region in which the average concentration of dopant atoms of each conductivity type, including both the compensated and uncompensated atoms thereof, is less than the maximum concentration of the majority type dopant atoms in said one base regions, and b. said layer having a thickness adequate to increase said avalanche breakdown capability to a voltage greater than the voltage drop through said one base region caused by the diversion of current within said one base region from said adjacent emitter region to said gate electrode said current being generated by a turn off voltage applied to said gate electrode.

Claim 6

A gate controlled rectifier comprising: a body of semiconductor material including two emitter regions and two base regions, one of said emitter regions having two spread-apart portions, each base region being disposed between a respective emitter region and the other of said base regions, adjacent regions being of opposite type conductivity and having a PN junction therebetween, a gate electrode connected to one of said base regions on opposite sides of said spaced-apart portions of said one emitter region to provide separate paths for current through said one base region from each of said opposite sides, and means for increasing the avalanche breakdown capability of said rectifier for voltages applied between said one base region and said one emitter region, said means comprising: a. a layer of semiconductor material between said one base region and said one emitter region in which the average concentration of dopant atoms of each conductivity type, including both the compensated and uncompensated atoms thereof, is less than the maximum concentration of the majority type dopant atoms in said one base regions, and b. said layer having a thickness adequate to increase said avalanche breakdown capability to a voltage greater than the voltage drop through said one base region caused by the diversion of current within said one base region from said adjacent emitter region to said gate electrode said current being generated by a turn off voltage applied to said gate electrode.

Claim 7

The rectifier of claim 3, in which the conductivity within said layer increases in the direction away from said one base region.

Claim 8

A gate controlled rectifier comprising: a body of semiconductor material including two emitter regions and two base regions, each base region being disposed between a respective emitter region and the other of said base regions, adjacent regions being of opposite type conductivity and having a PN junction therebetween, one junction between one of said emitters and the one base region thereto being disposed within the bulk of said body and extending to a surface thereof, a gate electrode connected to one said base region, and means for increasing the avalanche breakdown capability of said rectifier for voltages applied between said one base region and said emitter region comprising: a. a layer of semiconductor material between said one base region and said one emitter region, said layer having a portion within the bulk and a portion extending to said surface of said body, the average concentration of dopant atoms within said layer of each conductivity type, including both the compensated and uncompensated atoms thereof, being less than the maximum concentration of the majority type dopant atoms in said one base region, b. said layer having a thickness adequate to increase said avalanche breakdown capability to a voltage greater than the voltage drop through said one base region caused by the diversion of current from said adjacent emitter region to said gate electrode said current being generated by a turn off voltage applied to said gate electrode and c. the thickness of said layer being greater at said surface than within the bulk of said body.

Claim 9

A gate controlled rectifier comprising: a body of semiconductor material including two emitter regions and two base regions, each base region being disposed between a respective emitter region and the other of said base regions, adjacent regions being of opposite type conductivity and having a PN junction therebetween, one junction between one of said emitters and the one base region thereto being disposed within the bulk of said body and extending to a surface thereof, a gate electrode connected to one said base region, and means for increasing the avalanche breakdown capability of said rectifier for voltages applied between said one base region and said emitter region comprising: a. a layer of semiconductor material between said one base region and said one emitter region, said layer having a portion within the bulk and a portion extending to said surface of said body, the average concentration of dopant atoms within said layer of each conductivity type, including both the compensated and uncompensated atoms thereof, being less than the maximum concentration of the majority type dopant atoms in said one base region, b. said layer having a thickness adequate to increase said avalanche breakdown capability to a voltage greater than the voltage drop through said one base region caused by the diversion of current from said adjacent emitter region to said gate electrode said current being generated by a turn off voltage applied to said gate electrode and c. the thickness of said layer being greater at said surface than within the bulk of said body.

Claim 10

A rectifier as in claim 5, in which said one emitter region has two spaced-apart portions and in which said gate electrode is connected to said one base region on opposite sides of each of said spaced-apart portions of said one emitter region to provide separate paths for current through said one base region from each of said opposite sides.

Claim 11

A rectifier as in claim 6, in which the conductivity within said layer increases in the direction away from said one base region.

Claim 12

A rectifier as in claim 7 in which said layer is of the same conductivity type as that of said one base region.

Claim 13

A rectifier as in claim 8, in which the conductivity within said layer increases in the direction away from said one base region.

Claim 14

A gate controlled rectifier comprising: a body of semiconductor material including two emitter regions and two base regions, each base region being disposed between an emitter region and the other of said base regions, adjacent regions being of opposite type conductivity and having a PN junction therebetween, a gate electrode connected to one of said base regions, and means for increasing the avalanche breakdown capability of said rectifier for voltages applied between said one base region and the emitter region adjacent thereto, said means comprising: a. a layer of semiconductor material of the same conductivity type as that of said adjacent emitter region in which the average concentration of dopant atoms of each conductivity type, including both the compensated and uncompensated atoms thereof, is less than the maximum concentration of the majority type dopant atoms in said one base region, b. said layer having a thickness adequate to increase said avalanche breakdown capability to a voltage greater than the voltage drop through said one base region caused by the diversion of current within said one base region from said adjacent emitter region to said gate electrode said current being generated by a turn off voltage applied to said gate electrode, and c. the conductivity within said layer being uniform throughout said layer.

Claim 15

A gate controlled rectifier comprising: a body of semiconductor material including two emitter regions and two base regions, each base region being disposed between an emitter region and the other of said base regions, adjacent regions being of opposite type conductivity and having a PN junction therebetween, a gate electrode connected to one of said base regions, and means for increasing the avalanche breakdown capability of said rectifier for voltages applied between said one base region and the emitter region adjacent thereto, said means comprising: a. a layer of semiconductor material of the same conductivity type as that of said adjacent emitter region in which the average concentration of dopant atoms of each conductivity type, including both the compensated and uncompensated atoms thereof, is less than the maximum concentration of the majority type dopant atoms in said one base region, b. said layer having a thickness adequate to increase said avalanche breakdown capability to a voltage greater than the voltage drop through said one base region caused by the diversion of current within said one base region from said adjacent emitter region to said gate electrode said current being generated by a turn off voltage applied to said gate electrode, and c. the conductivity within said layer being uniform throughout said layer.

Claim 16

The rectifier of claim 3, in which the conductivity throughout said layer is uniform.

Claim 17

The rectifier of claim 6, in which the conductivity throughout said layer is uniform.

Claim 18

The rectifier of claim 8, in which the conductivity throughout said layer is uniform.