US3566206A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Negative resistance semiconductor device having a pinipin zone structure
Assignee: AT&T Inc
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Filing: 1968-12-20
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Granted: 1971-02-23
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Expires: 1988-12-20
Abstract
Abstract A P+INIPIN+ diode is operated as an avalanche diode to provide highly efficient negative resistance. Also, by connecting voltage sources to the intermediate N- and P-Zones, the devices may be used as an electronic switch.
Inventors
- 👤 Dirk J Bartelink
- 👤 Donald L Scharfetter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:54
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D62/00; H10D62/10; H10D99/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
24 words
The device recited in claim 1 in which there are further provided electrode connections to each of the outer end zones in said structure.
Claim 2
Dependent Claim
24 words
The device recited in claim 2 in combination with means for applying a reverse bias voltage to the semiconductor element through the electrode connections.
Claim 3
Dependent Claim
14 words
The device recited in claim 1 in which the semiconductor element is essentially silicon.
Claim 4
Dependent Claim
59 words
The device recited in claim 4 in which the width of the central said I-zone is between 5 and 100 microns, the widths of both of the other intermediate said I-zones is between 1 and 5 microns, and the widths of the intermediate said P- and N-zones both are less than the widths of either of said intermediate I-zones.
Claim 5
Dependent Claim
44 words
The device of claim 4 in which the net significant donor impurity concentration in the intermediate N-zone is of the order of 1016 per cm.3, and the net significant acceptor impurity concentration in the intermediate P-zone is of the order of 1016 per cm.3.
Claim 6
Dependent Claim
38 words
Semiconductive switching apparatus including the device according to claim 2 in combination with electrically conductive means to connect the intermediate N-zone serially through a switch and a voltage source to the outer P-type end zone in said structure.
Claim 7
Dependent Claim
38 words
Semiconductive switching apparatus including the device according to claim 2 in combination with electrically conductive means to connect the intermediate P-zone serially through a switch and a voltage source to the outer N-type end zone in said structure.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-02-22 | 1974-08-24 | 1975-02-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-02-22 | 1978-08-24 | 1979-02-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-02-22 | 1982-08-24 | 1983-02-23 | $7700.00 | Window Closed / Lapsed |