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Method and masking structure for configurating thin layers

Assignee: Siemens AG
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Filing: 1975-04-01
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Granted: 1977-12-06
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Expires: 1995-04-01
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Abstract

Abstract A method for configurating thin layers, particularly in thin film circuits, wherein a layer to be configurated is irradiated with an electron beam passing through a mask to obtain a configuration corresponding to the configuration of selected portions of such a mask, and a mask for use therein, as well as a method of making such mask, in which the mask is so constructed that, in use, the electron beam completely radiates the geometric shadow areas of the supporting elements on the thin film.

Inventors

  • 👤 Alfred Politycki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 08:13
CPC Classifications
H; H10; H10N; H10N97/00; G; G03; G03F; G03F7/00; G03F7/20; G03F7/2037; Y; Y10; Y10S; Y10S428/00; Y10S428/919; Y10S430/00; Y10S430/143; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/2481

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 138 words
A mask for use in configurating thin layers, wherein the thin layer to be configurated is irradiated with an electron beam passing through such mask to obtain a configuration on such layer corresponding to the configuration of a masking member carried by such mask, comprising a masking member of thin metal, and a supporting structure for said masking member comprising a plurality of series of fine supporting elements, the elements of each series extending in the same direction and traverse to the direction of another series, said series being interconnected at their intersection to form a mesh-like structure, the elements thereof each being of a width, in transverse cross-section, which is sufficiently small, that in use stray radiation of the electron beam within the thin layer will completely radiate the geometric shadow areas of the supporting elements thereon.
Claim 2
Dependent Claim 138 words
A mask for use in configurating thin layers, wherein the thin layer to be configurated is irradiated with an electron beam passing through such mask to obtain a configuration on such layer corresponding to the configuration of a masking member carried by such mask, comprising a masking member of thin metal, and a supporting structure for said masking member comprising a plurality of series of fine supporting elements, the elements of each series extending in the same direction and traverse to the direction of another series, said series being interconnected at their intersection to form a mesh-like structure, the elements thereof each being of a width, in transverse cross-section, which is sufficiently small, that in use stray radiation of the electron beam within the thin layer will completely radiate the geometric shadow areas of the supporting elements thereon.
Claim 3
Dependent Claim 38 words
A mask according to claim 1, wherein the supporting elements comprising said mesh-like structure have a width, in transverse cross-section, of less than 2 μ, and the openings therebetween have a corresponding width of more than 2 μ.
Claim 4
Dependent Claim 24 words
A mask according to claim 2, wherein the mask structure is fabricated from metals selected from the group consisting of nickel, copper and gold.
Claim 5
Independent Claim 187 words
A method for configurating thin layers, wherein the thin layer to be configurated is irradiated with an electron beam passing through a mask to obtain a configuration on such layer corresponding to the configuration of selected portions of such a mask, comprising the steps of positioning the layer to be configurated in the path of an electron beam for irradiation thereby, interposing a masking member, which is impermeable to the electron beam and has a desired configuration, on such beam path between the source of such electron beam and said layer, supporting said masking member by means of relatively very fine supporting elements which extend over areas of the mask which are to be permeable to the electron beam, and spacing the masking member so supported, relative to the layer to be configurated, a distance such that in consideration with the employed widths of the fine supporting elements and parameters with respect to the relative sizes of the masking member and film configuration structures, that stray radiation of the electron beam within the thin layer completely radiates the geometric shadow areas of the fine supporting elements thereon.
Claim 6
Independent Claim 187 words
A method for configurating thin layers, wherein the thin layer to be configurated is irradiated with an electron beam passing through a mask to obtain a configuration on such layer corresponding to the configuration of selected portions of such a mask, comprising the steps of positioning the layer to be configurated in the path of an electron beam for irradiation thereby, interposing a masking member, which is impermeable to the electron beam and has a desired configuration, on such beam path between the source of such electron beam and said layer, supporting said masking member by means of relatively very fine supporting elements which extend over areas of the mask which are to be permeable to the electron beam, and spacing the masking member so supported, relative to the layer to be configurated, a distance such that in consideration with the employed widths of the fine supporting elements and parameters with respect to the relative sizes of the masking member and film configuration structures, that stray radiation of the electron beam within the thin layer completely radiates the geometric shadow areas of the fine supporting elements thereon.
Claim 7
Dependent Claim 30 words
A method according to claim 4, comprising supporting the masking member with the normal of its surface extending horizontally, and orienting the electron beam axis parallel to said surface normal.
Claim 8
Dependent Claim 21 words
A method according to claim 4, comprising supporting such masking member in two transversely extending directions in substantially a common plane.
Claim 9
Dependent Claim 30 words
A method according to claim 6, comprising supporting the masking member with the normal of its surface extending horizontally, and orienting the electron beam axis parallel to said surface normal.
Claim 10
Dependent Claim 24 words
A mask according to claim 7, wherein the mask structure is fabricated from metals selected from the group consisting of nickel, copper and gold.

References Cited (Backward Citations)

US2779269A Cited
US3118050A Cited
US3192136A Cited
US3476658A Cited
US3402110A Cited
US3878061A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1980-12-05 1981-06-06 1981-12-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1984-12-05 1985-06-06 1985-12-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1988-12-05 1989-06-06 1989-12-06 $7700.00 Window Closed / Lapsed

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