US4058824A
Expired / Lapsed
US
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Semiconductor diode
Assignee: Licentia Patent Verwaltungs GmbH
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Filing: 1973-05-16
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Granted: 1977-11-15
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Expires: 1993-05-16
Abstract
Abstract A semiconductor diode has a blocking electrode for minority carriers constructed in such a manner that the space charge region extends right up to the blocking electrode in the operation state.
Inventors
- 👤 Manfred Claassen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:23
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D99/00; H10P; H10P95/00
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
90 words
In a semiconductor delay diode comprising a semiconductor body of a first conductivity type, means, adjacent one surface of said body and including a rectifying junction, for providing a space charge region in said body, and a blocking electrode for minority carriers adjacent the opposite surface of said semiconductor body, the improvement wherein the doping of said semiconductor body and the spacing between said blocking electrode and said junction are such as to extend the space charge region of said diode up to said blocking electrode in the operational state.
Claim 2
Dependent Claim
90 words
In a semiconductor delay diode comprising a semiconductor body of a first conductivity type, means, adjacent one surface of said body and including a rectifying junction, for providing a space charge region in said body, and a blocking electrode for minority carriers adjacent the opposite surface of said semiconductor body, the improvement wherein the doping of said semiconductor body and the spacing between said blocking electrode and said junction are such as to extend the space charge region of said diode up to said blocking electrode in the operational state.
Claim 3
Dependent Claim
31 words
A semiconductor diode as defined in claim 1, wherein said blocking electrode comprises an ohmic metal-semiconductor contacts, with a high barrier level for the said minority carriers, on said opposite surface.
Claim 4
Dependent Claim
54 words
A semiconductor diode as defined in claim 1, wherein said blocking electrode comprises: a semiconductor region in said semiconductor body adjacent said opposite surface, said region being of the same conductivity type as said semiconductor body and being more highly doped than said semiconductor body, and a metal layer ohmically contacting said semiconductor region.
Claim 5
Dependent Claim
27 words
A semiconductor diode as defined in claim 3, wherein said semiconductor region has a thickness substantially less than the thickness of the remainder of said semiconductor body.
Claim 6
Dependent Claim
24 words
A semiconductor diode as defined in claim 1, wherein said rectifying junction of said space charge region providing means comprises a rectifying metal-semiconductor contact.
Claim 7
Dependent Claim
21 words
A semiconductor diode as defined in claim 1, wherein said rectifying junction of said space charge providing means comprises a pn-junction.
Claim 8
Dependent Claim
46 words
A semiconductor diode as defined in claim 6 wherein said pn-junction is formed between said semiconductor body and a semiconductor region of opposite conductivity type provided within said body adjacent said one surface and further comprising an ohmic contact to said semiconductor region forming said pn-junction.
Claim 9
Dependent Claim
25 words
A semiconductor diode as defined in claim 1, wherein said semiconductor body comprises silicon of n-type conductivity and said blocking electrode comprises an Au-Sb contact.
Claim 10
Dependent Claim
24 words
A semiconductor diode as defined in claim 1, further comprising a second electrode, of larger cross-section than said blocking electrode, on said one surface.
Claim 11
Dependent Claim
33 words
A semiconductor diode as defined in claim 9, wherein said blocking electrode has a larger surface facing said semiconductor body than the surface of said semiconductor body in contact with said blocking electrode.
Claim 12
Dependent Claim
15 words
A semiconductor diode as defined in claim 9, wherein said blocking electrode is laterally underetched.
Claim 13
Dependent Claim
28 words
A semiconductor diode as defined in claim 11, wherein said semiconductor body has a mesa-etched form with a cross-section which decreases in the direction toward said blocking electrode.
Claim 14
Dependent Claim
15 words
A semiconductor diode as defined in claim 9, wherein both of said electrodes are underetched.
Claim 15
Dependent Claim
28 words
A semiconductor diode as defined in claim 9, wherein the one of said two electrodes limiting the space charge region of said semiconductor diode comprises an annular electrode.
Claim 16
Independent Claim
86 words
A method of producing a semiconductor delay diode comprising the steps of: forming a rectifying junction in a semiconductor body of one conductivity type adjacent one surface thereof; forming a blocking electrode for minority carriers adjacent the opposite surface of said semiconductor body; and, adjusting the thickness of said semiconductor body so that the spacing between said rectifying junction and said blocking electrode for minority carriers is such that the space charge region of said diode extends up to said blocking electrode in the operational state.
Claim 17
Independent Claim
86 words
A method of producing a semiconductor delay diode comprising the steps of: forming a rectifying junction in a semiconductor body of one conductivity type adjacent one surface thereof; forming a blocking electrode for minority carriers adjacent the opposite surface of said semiconductor body; and, adjusting the thickness of said semiconductor body so that the spacing between said rectifying junction and said blocking electrode for minority carriers is such that the space charge region of said diode extends up to said blocking electrode in the operational state.
Claim 18
Dependent Claim
36 words
A method as defined in claim 15, and further comprising the step of forming a second electrode on said one surface of said semiconductor body so as to provide a carrier body for said semiconductor diode.
Claim 19
Dependent Claim
56 words
A method as defined in claim 16 wherein: said step of forming a rectifying junction includes providing a region of the opposite conductivity type within said semiconductor body adjacent said one surface to form a pn-junction; and said step of forming a second electrode includes forming said second electrode as an ohmic electrode contacting said region.
Claim 20
Dependent Claim
36 words
A method as defined in claim 16 wherein said step of forming a rectifying junction includes providing said second electrode in the form of a rectifying metal-semiconductor contact on said one surface of said semiconductor body.
Claim 21
Dependent Claim
54 words
A method as defined in claim 16 wherein said step of adjusting comprises: after said step of forming a rectifying junction, removing the semiconductor body material up to a predetermined thickness from the surface of said semiconductor body opposite to said second electrode and thereafter forming said blocking electrode for said minority carriers thereon.
Claim 22
Dependent Claim
25 words
A method as defined in claim 19, and further comprising mesa-etching said semiconductor body on the surface thereof said blocking electrode for said minority carriers.
Claim 23
Dependent Claim
22 words
A method as defined in claim 20, and comprising mesa-etching said semiconductor body from one said electrode to the other said electrode.
References Cited (Backward Citations)
US3509428A
Cited
US3752702A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1980-11-14 | 1981-05-16 | 1981-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-11-14 | 1985-05-16 | 1985-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-11-14 | 1989-05-16 | 1989-11-15 | $7700.00 | Window Closed / Lapsed |