Patent US4058368A successfully refreshed from Google Patents.
US4058368A
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Hydrogen detector
Assignee: Semiconductor Sensors Inc
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Filing: 1975-09-09
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Granted: 1977-11-15
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Expires: 1995-09-09
Abstract
Abstract A device for the detection of hydrogen comprising a semiconductor, a metal electrode and an insulator situated between the semiconductor and the electrode. The metal electrode is made of palladium, nickel, platinum or an alloy containing at least 20% palladium by atomic weight. In one embodiment, the device is a field-effect transistor. Means are also provided for heating the device for improving its response time.
Inventors
- 👤 Christer Martinus Svensson
- 👤 Leif Sigurd Lundkvist
- 👤 Kurt Ingemar Lundstrom
- 👤 Madurai Somanathan Shivaraman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:23
CPC Classifications
H; H10; H10D; H10D99/00; G; G01; G01N; G01N27/00; G01N27/26; G01N27/403; G01N27/414; G01N27/4141
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
60 words
An improved device for detection of hydrogen in the form of hydrogen gas, atomic hydrogen or certain gaseous hydrogen compounds, including ammonia, the improvement comprising a semiconductor, a metal electrode and an insulating layer positioned intermediate said semiconductor and said electrode, said metal electrode made from palladium, nickel, platinum or an alloy containing at least 20% palladium by atomic weight.
Claim 2
Dependent Claim
60 words
An improved device for detection of hydrogen in the form of hydrogen gas, atomic hydrogen or certain gaseous hydrogen compounds, including ammonia, the improvement comprising a semiconductor, a metal electrode and an insulating layer positioned intermediate said semiconductor and said electrode, said metal electrode made from palladium, nickel, platinum or an alloy containing at least 20% palladium by atomic weight.
Claim 3
Dependent Claim
36 words
An improved device according to claim 1, wherein said device is a field-effect transistor, the gate electrode of said transistor made from palladium, nickel, platinum or an alloy containing at least 20% palladium by atomic weight.
Claim 4
Dependent Claim
23 words
An improved device according to claim 2, wherein means are provided to heat the device to temperatures ranging between 50° and 250° C.
Claim 5
Dependent Claim
24 words
An improved device according to claim 3, wherein said heater means is a part of said semiconductor in the form of an integrated circuit.
Claim 6
Dependent Claim
23 words
An improved device according to claim 1 wherein means are provided to heat the device to temperatures ranging between 50° and 250° C.
Claim 7
Dependent Claim
24 words
An improved device according to claim 5, wherein said heater means is a part of said semiconductor in the form of an integrated circuit.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-11-14 | 1981-05-16 | 1981-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-11-14 | 1985-05-16 | 1985-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-11-14 | 1989-05-16 | 1989-11-15 | $7700.00 | Window Closed / Lapsed |