Semiconductor device and a method of producing such device

Claim 1

In a method of producing electrical contacts on a semiconductor device wherein a semiconductor body is provided with at least one metal contact layer, the area around each such contact layer is completely coated with an insulating layer leaving free a contact surface on each such metal contact layer, at least two different metal layers are additionally successively applied onto each one of said contact surfaces so that the outer metal layer consists of a soft-solderable metal and has a thickness substantially greater than that of the two other metal layers combined, and any excess metal on said insulating layer is removed by a photo-lacquer etching technique, the improvement which comprises: vapor depositing as each of said metal contact layers an aluminum layer, applying a layer of a heat-resistant organic insulating material selected from the group consisting of polyphenylene, polyxylene, and polysiloxane, as said insulating layer, vapor depositing as a first one of said two additional metal layers a layer of titanium onto each one of said contact surfaces, applying as the outer one of said two additional metal layers a layer of soft-solderable metal selected from the group consisting of copper and silver, and removing any excess of such additional metals from said insulating layer on areas around each one of said contact surfaces by etching while using an etch mask composed of a photo-lacquer.