Chalcogenated tetracene organic metals

Claim 2

A composition of matter comprising an ion-radical of the formula (D.sub.x).sup.n.spsp.+ (A).sup.n.spsp.- wherein (D x ) n .spsp.+ is a chalcogenated tetracene complex cation selected from the group consisting of complex cations of tetrathiotetracene, tetraselenotetracene and tetratellurotetracene and A is an anion selected from the group consisting of a. an inorganic anion selected from the group consisting of Br 3 - , I 3 - , F - , Cl - , Br - , I - , SCN - , nitrate, sulfate, phosphate, fluoroborate, ferricyanide, molybdate, tungstate; and b. an organic anion derived from an organic acid selected from the group consisting of: an aliphatic monocarboxylic acid, an aliphatic dicarboxylic acid, an aliphatic polycarboxylic acid, an unsaturated carboxylic acid, an aromatic carboxylic acid, a sulfonic acid, a heterocyclic acid containing from 5 to 6 atoms in the heterocyclic nucleus and having at least one hetero atom selected from the group consisting of a nitrogen, oxygen, or sulfur atom; a monohydric phenol, and a polyhydric phenol; and x represents the ratio of D to A and has a value between about 3 and about 1.5 and n is an integer between 1 and 5, said salt having an electrical resistivity less than about 10 -2 ohm-cm at 295° K said resistivity decreasing with decreasing temperature.

Claim 3

The composition of matter of claim 1 wherein said chalcogenated tetracene complex cation is tetrathiotetracene.

Claim 4

The composition of matter of claim 2 wherein said anion is a halogen.

Claim 5

The composition of matter of claim 3 wherein said halogen is iodine.

Claim 6

The composition of matter (tetrathiotetracene 2 ) + (I 3 ) - .

Claim 7

The composition of matter (tetrathiotetracene 2 ) + (I 3 ) - .

Claim 8

An element comprising a support having thereon a layer containing the ion-radical salt of claim 2.

Claim 9

An element according to claim 6 wherein said chalcogenated tetracene complex cation of said ion radical salt is tetrathiotetracene.

Claim 10

An element according to claim 6 wherein said anion of said ion-radical salt is a halogen.

Claim 11

An element according to claim 8 wherein said halogen is iodine.

Claim 12

An element according to claim 6 wherein said layer comprises a binder and said ion-radical salt.

Claim 13

An element according to claim 6 wherein said ion-radical salt is in the form of a binderless thin film.

Claim 14

An element according to claim 11 having a thickness of about 0.05 μm to about 5 μm.

Claim 15

An element according to claim 6 wherein said ion-radical salt is (tetrathiotetracene 2 ) + (I 3 ) - .

Claim 16

A process for preparing an ion-radical salt wherein said ion-radical salt is represented by the formula (D.sub.x).sup.n.spsp.+ (A).sup.n.spsp.- wherein (D x ) n .spsp.+ is a chalcogenated tetracene complex cation selected from the group consisting of complex cations of tetrathiotetracene, tetraselenotetracene and tetratellurotetracene and A is an anion selected from the group consisting of a. an inorganic anion selected from the group consisting of Br 3 - , I 3 - , F - , Cl - , Br - , I - , SCN - , nitrate, sulfate, phosphate, fluoroborate, ferricyanide, molybdate, tungstate; and b. an organic anion derived from an organic acid selected from the group consisting of: an aliphatic monocarboxylic acid, an aliphatic dicarboxylic acid, an aliphatic polycarboxylic acid, an unsaturated carboxylic acid, an aromatic carboxylic acid, a sulfonic acid, a heterocyclic acid containing from 5 to 6 atoms in the heterocyclic nucleus and having at least one hetero atom selected from the group consisting of a nitrogen, oxygen, or sulfur atom; a monohydric phenol, and a polyhydric phenol; and x represents the ratio of D to A and has a value between about 3 and about 1.5 and n is an integer between 1 and 5 comprising the steps of 1. forming a first vapor comprising said chalcogenated tetracene complex cation; 2. forming a second vapor comprising said anion; and 3. reacting said first vapor with said second vapor at a temperature of about 75° C to about 300° C in a substantially inert atmosphere.

Claim 17

A process for preparing an ion-radical salt wherein said ion-radical salt is represented by the formula (D.sub.x).sup.n.spsp.+ (A).sup.n.spsp.- wherein (D x ) n .spsp.+ is a chalcogenated tetracene complex cation selected from the group consisting of complex cations of tetrathiotetracene, tetraselenotetracene and tetratellurotetracene and A is an anion selected from the group consisting of a. an inorganic anion selected from the group consisting of Br 3 - , I 3 - , F - , Cl - , Br - , I - , SCN - , nitrate, sulfate, phosphate, fluoroborate, ferricyanide, molybdate, tungstate; and b. an organic anion derived from an organic acid selected from the group consisting of: an aliphatic monocarboxylic acid, an aliphatic dicarboxylic acid, an aliphatic polycarboxylic acid, an unsaturated carboxylic acid, an aromatic carboxylic acid, a sulfonic acid, a heterocyclic acid containing from 5 to 6 atoms in the heterocyclic nucleus and having at least one hetero atom selected from the group consisting of a nitrogen, oxygen, or sulfur atom; a monohydric phenol, and a polyhydric phenol; and x represents the ratio of D to A and has a value between about 3 and about 1.5 and n is an integer between 1 and 5 comprising the steps of 1. forming a first vapor comprising said chalcogenated tetracene complex cation; 2. forming a second vapor comprising said anion; and 3. reacting said first vapor with said second vapor at a temperature of about 75° C to about 300° C in a substantially inert atmosphere.

Claim 18

A process according to claim 14 wherein said first vapor and said second vapor are reacted at a temperature of about 200° C to about 300° C.

Claim 19

A process according to claim 14 wherein said inert atmosphere comprises an inert gas selected from the group consisting of argon, nitrogen, and helium.

Claim 20

A process according to claim 14 wherein said reaction is carried out in a tube furnace.

Claim 21

A process according to claim 14 wherein said reaction is carried out in a flow reactor.

Claim 22

A process according to claim 14 wherein the total pressure during the reaction step is from about 10 -5 torr to about 150 torr.

Claim 23

A process for preparing (tetrathiotetracene 2 ) + (I 3 ) - comprising the steps of: 1. forming a vapor of tetrathiotetracene; 2. forming a vapor of iodine; and 3. reacting the tetrathiotetracene vapor with the iodine vapor at a temperature of about 225° C in a vacuum.

Claim 24

A process for preparing (tetrathiotetracene 2 ) + (I 3 ) - comprising the steps of: 1. forming a vapor of tetrathiotetracene; 2. forming a vapor of iodine; and 3. reacting the tetrathiotetracene vapor with the iodine vapor at a temperature of about 225° C in a vacuum.