Process for decreasing surface resistivity of organic semiconductors by ultraviolet radiation

Claim 2

The process of claim 2 wherein said exposure ranges from about 106 ergs/cm.2 to about 1010 ergs/cm2.

Claim 3

The process of claim 2 wherein the light source is a mercury arc having a power of about 50 to about 500 watts.

Claim 4

The process of claim 2 wherein the semiconductor is positioned from about 1 to about 30 inches from the source of the ultraviolet radiation.

Claim 5

The process of claim 2 wherein the semiconductor is exposed to the ultraviolet radiation for a period of about 10 seconds to about two hours.

Claim 6

The process of claim 2 wherein the semiconductor is a polycyclic aromatic hydrocarbon compound having at least two positions joined by a bridge containing two to four atoms of a Group VIa element.

Claim 7

The process of claim 2 wherein the semiconductor is a material having the formula (D)ko(D n)m(Z p)q D is a fused polycyclic aromatic hydrocarbon having at least two positions joined by a bridge containing two to four atoms of a Group VIa element; Z is an anion; -p is the negative charge on each Z anion; q is the number of Z anions; (D)o is a combined neutral D moiety; +n is the charge on each D cation moiety; m represents the number of D cation moieties; k represents the number of D neutral moieties; the relationship between +n, m, -p and q being such that nm is equal to pq.

Claim 8

A process for decreasing the surface resistivity of an organic semiconductor selected from the group consisting of a polycyclic aromatic hydrocarbon compound having at least two positions joined by a bridge containing two to four atoms of a Group VIa element and a material having the formula (D)ko(D+n)m(Z p)q wherein: D is a fused polycyclic aromatic hydrocarbon having at least two positions joined by a bridge containing two to four atoms of a Group VIa element; Z is an anion; -p is the negative charge on each Z anion; q is the number of Z anions; (D)o is a combined neutral D moiety; +n is the charge on each D cation moiety; m represents the number of D cation moieties; k represents the number of D neutral moieties; the relationship between +n, m, -p and q being such that nm is equal to pq; comprising the step of subjecting the semiconductor to an exposure of from about 107 ergs/cm.2 to about 109 ergs/cm.2 of ultraviolet radiation.

Claim 9

A process for decreasing the surface resistivity of a Semiconductor element comprising a supporting substrate containing a semiconductor selected from the group consisting of a polycyclic aromatic hydrocarbon compound having at least two positions joined by a bridge containing two to four atoms of a Group VIa element and a material having the formula (D)ko(D n)m(Z p)q wherein: D is a fused polycyclic aromatic hydrocarbon having at least two positions joined by a bridge containing two to four atoms of a Group VIa element; Z is an anion; -p is the negative charge on each Z anion; q is the number of Z anions; (D)o is a combined neutral D moiety; +n is the charge on each D cation moiety; m represents the number of D cation moieties; k represents the number of D neutral moieties; The relationship between +n, m, -p and q being such that nm is equal to pq; comprising the step of exposing the element to ultraviolet radiation having an intensity sufficient to decrease the surface resistivity of said element.

Claim 10

The process of claim 10 wherein the ultraviolet radiation source is a mercury arc having a power of about 50 to about 500 watts.

Claim 11

The process of claim 10 wherein the semiconductor element is positioned from about 1 to about 30 inches from the source of the ultraviolet radiation.

Claim 12

The process of claim 10 wherein the semiconductor element is exposed to the ultraviolet radiation for a period of about 10 seconds to about 2 hours.

Claim 13

The process of claim 10 wherein said exposure ranges from about 106 ergs/cm.2 to about 1010 ergs/cm.2.

Claim 14

A process for decreasing the surface resistivity of a semiconductor element comprising a supporting substrate containing tetrathiotetracene comprising the step of exposing the semiconductor element to 107 to 109 ergs/cm.2 of ultraviolet radiation.

Claim 15

A process for decreasing the surface resistivity of a semiconductor element comprising a supporting substrate containing tetrathiotetracene bromide comprising the step of exposing the semiconductor element to 107 to 109 ergs/cm.2 of ultraviolet radiation.

Claim 16

A process for decreasing the surface resistivity of a semiconductor element comprising a supporting substrate containing tetrathiotetracene maleate comprising the step of exposing the semiconductor element to 107 to 109 ergs/cm.2 of ultraviolet radiation.

Claim 17

A process for decreasing the surface resistivity of a semiconductor element comprising a supporting substrate containing tetrathiotetracene citrate comprising the step of exposing the semiconductor element to 107 to 109 ergs/cm.2 of ultraviolet radiation.