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US4046609A
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US
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Method of manufacturing photo-diodes utilizing sequential diffusion
Assignee: US Philips Corp
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Filing: 1976-02-25
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Granted: 1977-09-06
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Expires: 1996-02-25
Abstract
Abstract A method of manufacturing a diode comprising a semiconductor body including at least first and second adjoining regions of the same conductivity type. The first region includes the diode junction and has a high resistivity, while the second region has a high impurity concentration that varies gradually and increases with increasing distance from the interface between the first and the second regions. The second region comprises two adjoining zones, the zone removed from the first region being more highly doped than the zone proximate said region. The second region is obtained by performing two successive diffusions of the same conductivity type as the first region to produce the two zones in said second region.
Inventors
- 👤 Jean-Louis Digoy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 03:02
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/411; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10D62/106; H10D62/112; H10D8/01; H10D8/045; H10D8/50; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; Y; Y10; Y10S; Y10S148/00; Y10S148/062; Y10S148/12; Y10S148/145; Y10S148/151; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
162 words
A method of producing a diode comprising the steps of: a. providing a semiconductor body of a first conductivity type and having a high resistivity; b. carrying out from at least one surface of said semi-conductor body at least two successive diffusions with a higher concentration of doping impurities of the said first conductivity type, a first region of said semiconductor diode being formed by the portion of said semiconductor body that is substantially free of said diffused doping impurities and the diffused portion of said semiconductor body forming a more highly doped second region of said semiconductor body, said doping impurity concentration in said second region having a graded distribution such that said impurity concentration increases with increasing distance from the interface between said first and second region; c. reducing the thickness of said first region; and then d. providing in said first region a zone of opposite conductivity type so as to form a diode junction in said first region.
Claim 2
Independent Claim
162 words
A method of producing a diode comprising the steps of: a. providing a semiconductor body of a first conductivity type and having a high resistivity; b. carrying out from at least one surface of said semi-conductor body at least two successive diffusions with a higher concentration of doping impurities of the said first conductivity type, a first region of said semiconductor diode being formed by the portion of said semiconductor body that is substantially free of said diffused doping impurities and the diffused portion of said semiconductor body forming a more highly doped second region of said semiconductor body, said doping impurity concentration in said second region having a graded distribution such that said impurity concentration increases with increasing distance from the interface between said first and second region; c. reducing the thickness of said first region; and then d. providing in said first region a zone of opposite conductivity type so as to form a diode junction in said first region.
Claim 3
Dependent Claim
38 words
A method as defined in claim 1, wherein said impurities are diffused in said semiconductor body to a predetermined depth so that the thickness of said first region is substantially equal to the thickness of said second region.
Claim 4
Dependent Claim
56 words
A method as defined in claim 1, wherein said second region comprises a first zone and a second zone produced by two successive diffusions, the doping impurity concentration and the depth of said second zones being higher and smaller, respectively, than those of said first zone, said first zone being disposed nearer to said diode junction.
Claim 5
Dependent Claim
52 words
A method as claimed in claim 1, wherein said second region is obtained by diffusion via a single main surface of said semiconductor body, said method further comprising the step of reducing the thickness of said first region from the surface opposite to the surface through which the diffusion has taken place.
Claim 6
Dependent Claim
93 words
A method as claimed in claim 1, wherein said second region is produced by carrying out at least one diffusion with high impurity concentration through each of the two oppositely located main surfaces of said semiconductor body, said diffusion being carried out to a depth which is at least equal to one diffusion length of the minority charge carriers, and said method further comprises reducing the thickness of said semiconductor body from one of said main surfaces thereof, by a value which said semiconductor is at least equal to the said diffusion depth.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-09-05 | 1981-03-07 | 1981-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-09-05 | 1985-03-07 | 1985-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-09-05 | 1989-03-07 | 1989-09-06 | $7700.00 | Window Closed / Lapsed |