US3582830A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device intended especially for microwave photodetectors
Assignee: Polish Academy of Sciences
•
Filing: 1968-09-05
•
Granted: 1971-06-01
•
Expires: 1988-09-05
Abstract
Abstract A semiconductor device having a lightly doped central region flanked by two heavily doped regions, all of the same conductivity type, with ohmic contacts to the heavily doped regions for applying bias voltage to the device. The thickness of the lightly doped region is less than the diffusion length of minority carriers therein, and the thickness of the heavily doped regions is greater than the diffusion length of the minority carriers therein. Light of varying amplitude applied to the lightly doped region is detected.
Inventors
- 👤 Jerzy Pultorak
- 👤 Michal Rzewuski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:05
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/24; H10F99/00; H10D; H10D99/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
119 words
A semiconductor device comprising: a body of semiconductor material having a lightly doped region and two heavily doped regions, said heavily doped regions being on either side of said lightly doped region with a junction between each two adjacent regions, said regions being of the same conductivity type, ohmic contact means on said two heavily doped regions for applying an electric signal of microwave frequency to said device, the thickness of the lightly doped regions being less than the diffusion length of minority carriers therein, the thickness of each said heavily doped region being of a thickness greater than the minority carriers therein light means of varying amplitude impinging upon said lightly doped region for modulating the signal amplitude.
Claim 2
Dependent Claim
119 words
A semiconductor device comprising: a body of semiconductor material having a lightly doped region and two heavily doped regions, said heavily doped regions being on either side of said lightly doped region with a junction between each two adjacent regions, said regions being of the same conductivity type, ohmic contact means on said two heavily doped regions for applying an electric signal of microwave frequency to said device, the thickness of the lightly doped regions being less than the diffusion length of minority carriers therein, the thickness of each said heavily doped region being of a thickness greater than the minority carriers therein light means of varying amplitude impinging upon said lightly doped region for modulating the signal amplitude.
Claim 3
Dependent Claim
16 words
The device of claim 1, and a microwave resonator, said device being mounted in said resonator.
Claim 4
Dependent Claim
19 words
The device of claim 2, said device being mounted in a holder, said holder being mounted in said resonator.
References Cited (Backward Citations)
US3284676A
Cited
US3324358A
Cited
US3302266A
Cited
US3366805A
Cited
US3436613A
Cited
US3458832A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-05-31 | 1974-11-30 | 1975-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-05-31 | 1978-11-30 | 1979-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-05-31 | 1982-11-30 | 1983-06-01 | $7700.00 | Window Closed / Lapsed |