Patent US4046565A successfully refreshed from Google Patents.
US4046565A
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Amorphous selenium coating
Assignee: AB Dick Co
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Filing: 1975-03-25
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Granted: 1977-09-06
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Expires: 1995-03-25
Abstract
Abstract A photoconductive coating having an improved charge acceptance is produced by vacuum evaporation of amorphous selenium in the presence of an inert gas.
Inventors
- 👤 Norman Carlile Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:18
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0623; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08207
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
115 words
A process for depositing a layer of photoconductive amorphous selenium upon a substrate which comprises evaporating amorphous selenium at a temperature in the range of about from 170° to 250° C. at a pressure in the range of about from 1x 10 -4 torr to 6 × 10 -2 torr, introducing an inert gas into an evacuated system having a pressure in the range of about from 1x 10 -7 torr to 1x 10 -6 torr, thus scattering said amorphous selenium and condensing amorphous selenium upon the entire surface of said substrate, the charge acceptance of the resulting selenium layer being in the range of about from 1/5 to 1/3 of the dielectric breakdown voltage.
Claim 2
Dependent Claim
115 words
A process for depositing a layer of photoconductive amorphous selenium upon a substrate which comprises evaporating amorphous selenium at a temperature in the range of about from 170° to 250° C. at a pressure in the range of about from 1x 10 -4 torr to 6 × 10 -2 torr, introducing an inert gas into an evacuated system having a pressure in the range of about from 1x 10 -7 torr to 1x 10 -6 torr, thus scattering said amorphous selenium and condensing amorphous selenium upon the entire surface of said substrate, the charge acceptance of the resulting selenium layer being in the range of about from 1/5 to 1/3 of the dielectric breakdown voltage.
Claim 3
Dependent Claim
18 words
A process according to claim 1 wherein the amorphous selenium has a purity of at least about 99.999%.
Claim 4
Dependent Claim
32 words
A process according to claim 1 wherein the pressure at which the selenium is evaporated is in the range of about from 1x 10 -3 torr to 3 × 10 -2 torr.
Claim 5
Dependent Claim
23 words
A process according to claim 1 wherein the charge acceptance of the selenium layer is about from 8 to 14 volts per micron.
Claim 6
Dependent Claim
33 words
A process according to claim 1 wherein the selenium is deposited upon the front surface of said substrate in a layer which is thicker than the layer deposited upon the back surface thereof.
Claim 7
Dependent Claim
12 words
A process according to claim 1 wherein the inert gas is argon.
Claim 8
Dependent Claim
16 words
A process according to claim 6 wherein the inert gas has a purity of about 99.999%.
Claim 9
Dependent Claim
11 words
A process according to claim 1 wherein the substrate is metallic.
Claim 10
Dependent Claim
17 words
A process according to claim 8 wherein the substrate is a metallic surface having a foraminated structure.
Claim 11
Dependent Claim
112 words
A photoconductive selenium coated substrate produced by a process which comprises evaporating amorphous selenium at a temperature in the range of about from 170° to 250° C. at a pressure in the range of about from 1x 10 -4 torr to 6 × 10 -2 torr, introducing an inert gas into an evacuated system having a pressure in the range of about from 1x 10 -7 torr to 1 × 10 -6 torr, thus scattering said amorphous selenium and condensing amorphous selenium upon the entire surface of said substrate, the charge acceptance of the resulting selenium layer being in the range of about from 1/5 to 1/3 of the dielectric breakdown voltage.
Claim 12
Dependent Claim
112 words
A photoconductive selenium coated substrate produced by a process which comprises evaporating amorphous selenium at a temperature in the range of about from 170° to 250° C. at a pressure in the range of about from 1x 10 -4 torr to 6 × 10 -2 torr, introducing an inert gas into an evacuated system having a pressure in the range of about from 1x 10 -7 torr to 1 × 10 -6 torr, thus scattering said amorphous selenium and condensing amorphous selenium upon the entire surface of said substrate, the charge acceptance of the resulting selenium layer being in the range of about from 1/5 to 1/3 of the dielectric breakdown voltage.
Claim 13
Dependent Claim
33 words
A product according to claim 10 wherein the selenium is deposited upon the front surface of said substrate in a layer which is thicker than the layer deposited upon the back surface thereof.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-09-05 | 1981-03-07 | 1981-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-09-05 | 1985-03-07 | 1985-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-09-05 | 1989-03-07 | 1989-09-06 | $7700.00 | Window Closed / Lapsed |