Circuit for squaring the transfer characteristics of a ttl gate

Claim 2

In a transistor switching gate having an input stage responsive to an input voltage, which input stage drives a phase splitter, two outputs of which phase splitter drive the bases of two output transistors joined together to derive an output voltage at the junction therebetween, the improvement for obtaining a relatively square transfer voltage characteristic at said output comprising: an additional transistor connected as an emitter follower with its input coupled to said input stage and its output coupled to said phase splitter for supplying current to said phase splitter to thereby bias said phase splitter off until said input voltage is high enough to turn on both said phase plitter and said output stage to thereby result in a substantially square voltage transfer characteristic.

Claim 3

The combination in accordance with claim 1 wherein said phase splitter is comprised of a transistor with a collector load first resistor for deriving one of said two outputs, and an emitter load second resistor for deriving the other of said two outputs, and wherein said additional transistor has its emitter connected through a third resistor to the emitter of said phase splitter transistor.

Claim 4

The combination in accordance with claim 2 wherein the size of said third resistor with respect to said second resistor is of such a value as to achieve a substantially square output voltage transfer characteristic.

Claim 5

In a transistor switching gate having an input transistor, the emitter of which is responsive to an input voltage and the output collector of which drives a phase splitter, two outputs of which phase splitter drive the bases of two output transistors joined emitter to collector to derive an output voltage at the junction therebetween, the improvement for obtaining a relatively square transfer voltage characteristic at said output comprising: an additional transistor with its base coupled to the base of said input transistor and its emitter coupled through a first load to said phase splitter for supplying current to said phase splitter to thereby bias said phase splitter off until said input voltage is high enough to turn on both said phase splitter and said output stage to thereby result in a substantially square voltage transfer characteristic.

Claim 6

In a transistor switching gate having an input transistor, the emitter of which is responsive to an input voltage and the output collector of which drives a phase splitter, two outputs of which phase splitter drive the bases of two output transistors joined emitter to collector to derive an output voltage at the junction therebetween, the improvement for obtaining a relatively square transfer voltage characteristic at said output comprising: an additional transistor with its base coupled to the base of said input transistor and its emitter coupled through a first load to said phase splitter for supplying current to said phase splitter to thereby bias said phase splitter off until said input voltage is high enough to turn on both said phase splitter and said output stage to thereby result in a substantially square voltage transfer characteristic.

Claim 7

The combination in accordance with claim 4 wherein said phase splitter is comprised of a transistor with its collector coupled to a second load, and its emitter coupled to a third load, and wherein said first load is coupled to the emitter of said phase splitter transistor.

Claim 8

The combination in accordance with claim 5 wherein the size of said first load with respect to said third load is of such a value as to achieve a substantially square output voltage transfer characteristic.

Claim 9

A gate circuit comprising: a first transistor having a first emitter for receiving input gating signals, a first base, and a first collector; a second transistor having a second base coupled to said first collector, a second collector for developing a first switching signal and a second emitter for developing a second switching signal across an emitter load; a third transistor having a third base coupled to the collector of the second transistor; a fourth transistor having a fourth base and connected in series with said third transistor for developing an output signal at the junction between said transistors; and a fifth transistor coupled to said first transistor and the emitter load of said second transistor to thereby provide a current source for said emitter load during the initial switching of said second transistor until the input voltage is of a high enough value to turn on both said second transistor and said fourth transistor; whereby, said second switching signal has its current supplied by said fifth transistor until said second transistor reaches a threshold at which point said second transistor supplies said load current.

Claim 10

A gate circuit comprising: a first transistor having a first emitter for receiving input gating signals, a first base, and a first collector; a second transistor having a second base coupled to said first collector, a second collector for developing a first switching signal and a second emitter for developing a second switching signal across an emitter load; a third transistor having a third base coupled to the collector of the second transistor; a fourth transistor having a fourth base and connected in series with said third transistor for developing an output signal at the junction between said transistors; and a fifth transistor coupled to said first transistor and the emitter load of said second transistor to thereby provide a current source for said emitter load during the initial switching of said second transistor until the input voltage is of a high enough value to turn on both said second transistor and said fourth transistor; whereby, said second switching signal has its current supplied by said fifth transistor until said second transistor reaches a threshold at which point said second transistor supplies said load current.