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Patent US4042447A successfully refreshed from Google Patents.
US4042447A
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Crystallizing a layer of silicon on a sodium thallium type crystalline alloy substrate
Assignee: Sotec Corp
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Filing: 1976-11-01
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Granted: 1977-08-16
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Expires: 1996-11-01
Abstract
Abstract Relates to a method for producing a product comprising crystalline silicon on a sodium thallium type substrate by application of silicon atoms gradually to that substrate whereby oriented overgrowth occurs and also to the product produced by said method. The product is useful in semiconductor and solar cell applications.
Inventors
- 👤 Norman E. Reitz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 11:26
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B25/00; C30B25/02; C30B25/18; H; H10; H10F; H10F71/00; H10F71/121; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/12; Y10S148/122; Y10S148/15; Y10S148/152; Y10S148/169
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
75 words
A method for producing solar cell quality crystalline silicon comprising: providing a sodium thallium type crystalline alloy substrate selected from the group consisting of LiZn, LiAl, LiGa, LiCd, LiIn and NaTl gradually applying silicon atoms thereto from the vapor state at a rate which allows said silicon atoms to arrange themselves for oriented crystal overgrowth on said substrate; and recovering a product comprising solar cell quality crystalline silicon upon a sodium thallium type crystalline substrate.
Claim 2
Independent Claim
75 words
A method for producing solar cell quality crystalline silicon comprising: providing a sodium thallium type crystalline alloy substrate selected from the group consisting of LiZn, LiAl, LiGa, LiCd, LiIn and NaTl gradually applying silicon atoms thereto from the vapor state at a rate which allows said silicon atoms to arrange themselves for oriented crystal overgrowth on said substrate; and recovering a product comprising solar cell quality crystalline silicon upon a sodium thallium type crystalline substrate.
Claim 3
Dependent Claim
18 words
A method as in claim 1, further comprising: providing thermal energy to said sodium thallium type crystalline substrate.
Claim 4
Dependent Claim
22 words
A method as in claim 1, wherein the step of applying atoms of silicon to said substrate is accomplished by gas epitaxy.
Claim 5
Dependent Claim
21 words
A method as in claim 1, wherein the step of applying atoms of silicon to said substrate is accomplished by sputtering.
Claim 6
Dependent Claim
22 words
A method as in claim 1, wherein the step of applying atoms of silicon to said substrate is accomplished by vacuum deposition.
Claim 7
Dependent Claim
21 words
A method as in claim 1, wherein the step of applying atoms of silicon to said substrate is accomplished by evaporation.
Claim 8
Dependent Claim
31 words
A method as in claim 1, wherein a tetrahedral center-apex distance of said sodium thallium type crystalline substrate is within about 30% of a tetrahedral center-apex distance of said crystalline silicon.
Claim 9
Dependent Claim
31 words
A method as in claim 1, wherein a tetrahedral center-apex distance of said sodium thallium type crystalline substrate is within about 15% of a tetrahedral center-apex distance of said crystalline silicon.
Claim 10
Dependent Claim
24 words
A method as in claim 1, wherein said sodium thallium type substrate is selected from the group consisting of LiZn, LiAl, LiGa, and LiCd.
Claim 11
Dependent Claim
33 words
A method as in claim 1, further comprising: providing thermal energy to said sodium thallium type crystalline substrate to assist said silicon atoms in arranging themselves for oriented crystal overgrowth on said substrate.
Claim 12
Dependent Claim
11 words
A method as in claim 1, wherein said substrate comprises LiZn.
Claim 13
Dependent Claim
11 words
A method as in claim 1, wherein said substrate comprises LiAl.
Claim 14
Dependent Claim
11 words
A method as in claim 1, wherein said substrate comprises LiGa.
Claim 15
Dependent Claim
11 words
A method as in claim 1, wherein said substrate comprises LiCd.
Claim 16
Dependent Claim
11 words
A method as in claim 1, wherein said substrate comprises LiIn.
Claim 17
Dependent Claim
11 words
A method as in Claim 1, wherein said substrate comprises NaTl.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-08-15 | 1981-02-14 | 1981-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-08-15 | 1985-02-14 | 1985-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-08-15 | 1989-02-14 | 1989-08-16 | $7700.00 | Window Closed / Lapsed |