Abstract An LED array with improved radiation intensity and distribution characteristics. A plurality of P-type regions are formed in an N-type substrate by growing an adherent dielectric layer onto the substrate, exposing a plurality of diffusion sites by selectively etching the dielectric layer and diffusing a dopant into the substrate at the diffusion sites until adjacent P-regions are joined by the process of lateral diffusion. The diffusion rate is controlled so that the interconnecting P-regions are extremely thin. These regions exhibit low photon absorption without the usual adverse surface effects formed in thin layers. The surface dielectric has a dielectric constant matched to that of the underlying LED material to optimize radiation transmission across their mutual boundary. The P-regions are geometrically arranged to provide improved radiation distribution at angles near the normal to the surface.
Inventors
👤 Roger W. Murray
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-11-09 22:35
CPC Classifications
H; H10; H10H; H10H29/00; H10H29/10; H10H29/14
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
110 words
A non-coherent light-emitting diode array having improved radiation intensity and distribution characteristics, said array comprising: a semiconductor body having a top surface, a first zone of one conductivity type, and a second zone of opposite conductivity type contiguous with said first zone and forming a rectifying junction therebetween, said second zone having a varying thickness dimension extending from said rectifying junction to said top surface; and a dielectric surface layer adhered to said top surface, said dielectric surface layer having a plurality of apertures, said thickness dimension of said second zone being substantially greater in regions underlying said apertures than in regions underlying solid portions of said dielectric surface layer.
Claim 2
Dependent Claim
110 words
A non-coherent light-emitting diode array having improved radiation intensity and distribution characteristics, said array comprising: a semiconductor body having a top surface, a first zone of one conductivity type, and a second zone of opposite conductivity type contiguous with said first zone and forming a rectifying junction therebetween, said second zone having a varying thickness dimension extending from said rectifying junction to said top surface; and a dielectric surface layer adhered to said top surface, said dielectric surface layer having a plurality of apertures, said thickness dimension of said second zone being substantially greater in regions underlying said apertures than in regions underlying solid portions of said dielectric surface layer.
Claim 3
Dependent Claim
18 words
The combination of claim 1 wherein said apertures are arranged as a plurality of substantially parallel elongate openings.
Claim 4
Dependent Claim
29 words
The combination of claim 1 wherein the minimum value of said thickness dimension in said regions underlying said solid portions of said dielectric surface layer is about 1.5 microns.
Claim 5
Dependent Claim
20 words
The combination of claim 1 wherein said first zone and said second zone are N and P conductivity types, respectively.
Claim 6
Dependent Claim
23 words
The combination of claim 1 wherein said dielectric surface layer has a dielectric constant matched to the dielectric constant of said semiconductor body.
Claim 7
Dependent Claim
18 words
The combination of claim 5 wherein said dielectric surface layer is fabricated from Si 3 N 4 .