Patent US4041447A successfully refreshed from Google Patents.
US4041447A
Expired / Lapsed
US
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Bonded magnetic bubble memory
Assignee: Verizon Laboratories Inc
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Filing: 1976-06-04
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Granted: 1977-08-09
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Expires: 1996-06-04
Abstract
Abstract A bonded bubble memory device includes a non-magnetic first substrate, a thin film layer of magnetic material located on a planar surface of the first substrate, the layer being adapted to sustain cylindrical wall magnetic domains, a second substrate made of a non-magnetic and non-conductive material, a desired pattern of magnetic elements and electrically conductive elements deposited on a planar surface of the second substrate, the pattern including at least three spaced points, the heights of which are equal and predetermined, the thin film layer on the first substrate being in contact with the spaced points on the second substrate so that a controlled spacing is maintained between the thin film layer and the pattern of magnetic elements. A cement composition is applied to portions of the space between the substrates to hold the substrates in a juxtaposed orientation. Advantageous methods of producing the device are also described.
Inventors
- 👤 Alfred E. Feuersanger
- 👤 Brian A. Shortt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 10:09
CPC Classifications
G; G11; G11C; G11C19/00; G11C19/02; G11C19/08; G11C19/0808; H; H01; H01F; H01F41/00; H01F41/32; H01F41/34; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T29/49146
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
217 words
A bubble memory device of the type adapted to operate at a rate in excess of 50K bits per second comprising: a. a first substrate made of a single crystal, nonmagnetic material and having a planar surface thereon, b. a thin film, single crystal layer of a magnetic material on the planar surface of the first substrate, c. a second substrate made of a non-conductive and non-magnetic material and having a planar surface thereon, d. a desired pattern of thin film magnetic elements and conductive elements on the planar surface of the second substrate, the pattern having a plurality of at least three, spaced, non-colinear points, the heights of which measured from the planar surface of the second substrate are equal, predetermined and greater than the heights of the other portions of the elements, the layer on the first substrate being adjacent to and in contact with the spaced points so that a controlled spacing is maintained over the entire juxtaposed substrates of the resulting bubble memory device, and e. a quantity of Canada balsam cement composition disposed around the peripheral portions of the substrates and partially within the space between the substrates for securing the substrates in the juxtaposed orientation, the variation in spacing between the first and second substrates being no greater than 500 A.
Claim 2
Dependent Claim
217 words
A bubble memory device of the type adapted to operate at a rate in excess of 50K bits per second comprising: a. a first substrate made of a single crystal, nonmagnetic material and having a planar surface thereon, b. a thin film, single crystal layer of a magnetic material on the planar surface of the first substrate, c. a second substrate made of a non-conductive and non-magnetic material and having a planar surface thereon, d. a desired pattern of thin film magnetic elements and conductive elements on the planar surface of the second substrate, the pattern having a plurality of at least three, spaced, non-colinear points, the heights of which measured from the planar surface of the second substrate are equal, predetermined and greater than the heights of the other portions of the elements, the layer on the first substrate being adjacent to and in contact with the spaced points so that a controlled spacing is maintained over the entire juxtaposed substrates of the resulting bubble memory device, and e. a quantity of Canada balsam cement composition disposed around the peripheral portions of the substrates and partially within the space between the substrates for securing the substrates in the juxtaposed orientation, the variation in spacing between the first and second substrates being no greater than 500 A.
Claim 3
Independent Claim
261 words
A method of producing a bubble memory device of the type adapted to operate at a rate in excess of 50K bits per second comprising the steps of: a. forming a first substrate made of a single crystal, non-magnetic material and having a planar surface thereon, b. forming a thin film, single crystal layer of a magnetic material on the planar surface of the first substrate, c. forming a second substrate made of a non-conductive and non-magnetic material and having a planar surface thereon, d. employing a desired pattern of thin film magnetic elements and conductive elements on the planar surface of the second substrate, the pattern having thereon a plurality of at least three spaced, non-colinear points, the heights of which are equal, predetermined and greater than the heights of the other portions of the elements, the layer on the first substrate being adjacent to and in contact with the spaced points so that a controlled spacing is maintained over the entire juxtaposed substrates of the resulting bubble memory, and e. bonding the layer on the first substrate against the spaced points on the second substrate so that a controlled spacing is maintained over the entire juxtaposed surface of the resulting bubble memory device, the bonding step including holding the substrates in a properly aligned, juxtaposed orientation such that the layer is in contact with the spaced points and placing an amount of a cement composition along a portion of the periphery of the substrates and partially within the space between the substrates to form a bond between the substrates.
Claim 4
Independent Claim
261 words
A method of producing a bubble memory device of the type adapted to operate at a rate in excess of 50K bits per second comprising the steps of: a. forming a first substrate made of a single crystal, non-magnetic material and having a planar surface thereon, b. forming a thin film, single crystal layer of a magnetic material on the planar surface of the first substrate, c. forming a second substrate made of a non-conductive and non-magnetic material and having a planar surface thereon, d. employing a desired pattern of thin film magnetic elements and conductive elements on the planar surface of the second substrate, the pattern having thereon a plurality of at least three spaced, non-colinear points, the heights of which are equal, predetermined and greater than the heights of the other portions of the elements, the layer on the first substrate being adjacent to and in contact with the spaced points so that a controlled spacing is maintained over the entire juxtaposed substrates of the resulting bubble memory, and e. bonding the layer on the first substrate against the spaced points on the second substrate so that a controlled spacing is maintained over the entire juxtaposed surface of the resulting bubble memory device, the bonding step including holding the substrates in a properly aligned, juxtaposed orientation such that the layer is in contact with the spaced points and placing an amount of a cement composition along a portion of the periphery of the substrates and partially within the space between the substrates to form a bond between the substrates.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-08-08 | 1981-02-07 | 1981-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-08-08 | 1985-02-07 | 1985-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-08-08 | 1989-02-07 | 1989-08-09 | $7700.00 | Window Closed / Lapsed |