US4041190A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing a silica mask on a semiconductor substrate
Assignee: Thales SA
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Filing: 1974-12-13
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Granted: 1977-08-09
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Expires: 1994-12-13
Abstract
Abstract A high precision silica coating, is provided. A thin film of a resin, from the polysiloxane group, for instance polyvinylsiloxane, is irradiated by 10,000 electron-volts. The resin converts in an insoluble product in the areas exposed according a predetermined pattern. After a heat treatment in oxidizing atmosphere, the remainder of the film is eliminated.
Inventors
- 👤 Jean-Claude Dubois
- 👤 Maryse Gazard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 19:34
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/63; H10P14/6326; H10P14/6342; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6536; H10P14/6539; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
64 words
A method of producing a precise silica insulating mask on predetermined areas of a semiconductor substrate, comprising the following steps: 1. depositing a thin film of an organic resin upon said semiconductor substrate, said resin consisting of polysiloxane of the structure: ##STR5## where n is an integer ranging from 2 to about 30, and where R is an alkyl, aryl or alkenyl group; 2.
Claim 2
Independent Claim
64 words
A method of producing a precise silica insulating mask on predetermined areas of a semiconductor substrate, comprising the following steps: 1. depositing a thin film of an organic resin upon said semiconductor substrate, said resin consisting of polysiloxane of the structure: ##STR5## where n is an integer ranging from 2 to about 30, and where R is an alkyl, aryl or alkenyl group; 2.
Claim 3
Dependent Claim
113 words
irradiating and scanning said film by an electron beam, the width of the electron beam at the point of intersection with the surface of said resin of the order of 0.01 to 1 micron in diameter, according to a predetermined pattern of said mask thereby cross-linking and insolubilizing the exposed areas of said organic resin; 3. eliminating the non-irradiated areas of the film by means of a solvent and 4. thermally treating the irradiated film and substrate in a furnace and in an oxidizing atmosphere at a temperature ranging from 500 to 1000° C. for about 2 hours, thereby converting the irradiated polysiloxane organic resin to a precise silica insulating mask impervious to
Claim 4
Dependent Claim
113 words
irradiating and scanning said film by an electron beam, the width of the electron beam at the point of intersection with the surface of said resin of the order of 0.01 to 1 micron in diameter, according to a predetermined pattern of said mask thereby cross-linking and insolubilizing the exposed areas of said organic resin; 3. eliminating the non-irradiated areas of the film by means of a solvent and 4. thermally treating the irradiated film and substrate in a furnace and in an oxidizing atmosphere at a temperature ranging from 500 to 1000° C. for about 2 hours, thereby converting the irradiated polysiloxane organic resin to a precise silica insulating mask impervious to
Claim 5
Dependent Claim
20 words
penetration by a gas, liquid, or solid. 2. A method as claimed in claim 1, wherein said polysiloxane is polymethylsiloxane.
Claim 6
Dependent Claim
12 words
A method as claimed in claim 1, wherein said polysiloxane is polyethylsiloxane.
Claim 7
Dependent Claim
12 words
A method as claimed in claim 1, wherein said polysiloxane is polyphenylsiloxane.
Claim 8
Dependent Claim
12 words
A method as claimed in claim 1, wherein said polysiloxane is polyvinylsiloxane.
Claim 9
Dependent Claim
24 words
A method as claimed in claim 1, wherein said temperature is about 800° C. and said atmosphere contains about 50% argon and 50% oxygen.
Claim 10
Independent Claim
63 words
A method of producing a precise silica insulating mask on predetermined areas of a semiconductor substrate, comprising the following steps: 1. depositing a thin film of an organic resin upon said semiconductor substrate, said resin consisting of polysiloxane of the structure: ##STR6## where n is an integer ranging from 2 to about 30, and where R is an alkyl, aryl or alkenyl group;
Claim 11
Independent Claim
63 words
A method of producing a precise silica insulating mask on predetermined areas of a semiconductor substrate, comprising the following steps: 1. depositing a thin film of an organic resin upon said semiconductor substrate, said resin consisting of polysiloxane of the structure: ##STR6## where n is an integer ranging from 2 to about 30, and where R is an alkyl, aryl or alkenyl group;
Claim 12
Dependent Claim
75 words
irradiating and scanning said film by an electron beam of from 10,000 to 30,000 electron-volts, the width of the electron beam at the point of intersection with the surface of said resin in the order of 0.01 to 1 micron in diameter, according to the predetermined pattern of said mask thereby cross-linking and insolubilizing the exposed areas of said organic resin; 3. eliminating the non-irradiated areas of the film by means of a solvent and
Claim 13
Dependent Claim
75 words
irradiating and scanning said film by an electron beam of from 10,000 to 30,000 electron-volts, the width of the electron beam at the point of intersection with the surface of said resin in the order of 0.01 to 1 micron in diameter, according to the predetermined pattern of said mask thereby cross-linking and insolubilizing the exposed areas of said organic resin; 3. eliminating the non-irradiated areas of the film by means of a solvent and
Claim 14
Dependent Claim
50 words
thermally treating the irradiated film and substrate in a furnace and in an oxidizing atmosphere at a temperature ranging from 500° to 1000° C. for about two hours, thereby converting the irradiated polysiloxane organic resin to a precise silica insulating mask impervious to penetration by a gas, liquid, or solid.
Claim 15
Dependent Claim
50 words
thermally treating the irradiated film and substrate in a furnace and in an oxidizing atmosphere at a temperature ranging from 500° to 1000° C. for about two hours, thereby converting the irradiated polysiloxane organic resin to a precise silica insulating mask impervious to penetration by a gas, liquid, or solid.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-08-08 | 1981-02-07 | 1981-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-08-08 | 1985-02-07 | 1985-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-08-08 | 1989-02-07 | 1989-08-09 | $7700.00 | Window Closed / Lapsed |