US3877980A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Methods of producing phosphosilicate glass patterns
Assignee: US Philips Corp
•
Filing: 1973-01-17
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Granted: 1975-04-15
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Expires: 1993-01-17
Abstract
Abstract Disclosed is a method of producing a phosphosilicate glass layer pattern on a substrate using a polysiloxane having phosphorous added thereto and devices having a layer pattern thus made.
Inventors
- 👤 Barry Forester Martin
- 👤 Edward David Roberts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 19:31
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; H10P; H10P95/00; H10W74/43; Y; Y10; Y10S; Y10S430/00; Y10S430/1053; Y10S430/1055; Y10S430/106; Y10S430/143
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
95 words
A METHOD OF PRODUCING A PHOSPHOSILICATE GLASS PATTERN ON A SUBSTRATE, SAID METHOD COMPRISING FORMING A LAYER OF A POLYSILOXANE AND PHOSPHORUS CONTAINING COMPOUND ON A SUBSTRATE, SUBJECTING SAID LAYER TO IRRIDATION ACCORDING TO PREDETERMINED PATTERN IN ORDER TO EFFECT THE SOLUBILITY OF THE PORTION OF SAID LAYER CORRESPONDING TO SAID PREDETERMINED PATTERN IN A DEVELOPER, TREATING SAID IRRADIATED LAYER WITH SAID DEVELOPER TO THEREBY REMOVE THE PORTION OF SAID LAYER CORRESPONDING TO SAID PATTERN AND THEN HEATING SAID RESULTANT PATTERNED LAYER TO THEREBY CONVERT SAID POLYSILOXANE AND PHOSPHORUS COMPOUND LAYER TO A PHOSPHOSILICATE GLASS.
Claim 2
Independent Claim
95 words
A METHOD OF PRODUCING A PHOSPHOSILICATE GLASS PATTERN ON A SUBSTRATE, SAID METHOD COMPRISING FORMING A LAYER OF A POLYSILOXANE AND PHOSPHORUS CONTAINING COMPOUND ON A SUBSTRATE, SUBJECTING SAID LAYER TO IRRIDATION ACCORDING TO PREDETERMINED PATTERN IN ORDER TO EFFECT THE SOLUBILITY OF THE PORTION OF SAID LAYER CORRESPONDING TO SAID PREDETERMINED PATTERN IN A DEVELOPER, TREATING SAID IRRADIATED LAYER WITH SAID DEVELOPER TO THEREBY REMOVE THE PORTION OF SAID LAYER CORRESPONDING TO SAID PATTERN AND THEN HEATING SAID RESULTANT PATTERNED LAYER TO THEREBY CONVERT SAID POLYSILOXANE AND PHOSPHORUS COMPOUND LAYER TO A PHOSPHOSILICATE GLASS.
Claim 3
Dependent Claim
15 words
A method as claimed in claim 1, characterized in that the substrate comprises a semiconductor.
Claim 4
Dependent Claim
14 words
A method as claimed in claim 2, characterized in that the semiconductor is silicon.
Claim 5
Dependent Claim
33 words
A method of claim 3, characterized in that the layer pattern comprising polysiloxane And a phosphorus containing compound is formed on a substrate having at least a partially intermediate layer of silicon oxide.
Claim 6
Dependent Claim
22 words
A method as claimed in claim 4, characterized in that the layer of silicon oxide is formed by conversion of a polysiloxane.
Claim 7
Dependent Claim
34 words
A method as claimed in claim 3, characterized in that the layer pattern comprising polysiloxane and a phosphorus containing compound is formed on a substrate having at least a partial layer of a polysiloxane.
Claim 8
Dependent Claim
41 words
A method as claimed in claim 4, characterized in that the layer of silicon oxide or of a material convertable to silicon oxide is formed according to a predetermined pattern before the formation of the layer pattern comprising polysiloxane and phosphorus.
Claim 9
Dependent Claim
19 words
A method as claimed in claim 1, characterized in that the pattern is obtained by irradiating at selected areas.
Claim 10
Dependent Claim
20 words
A method as claimed in claim 8, characterized in that the pattern is obtained by irradiation with an electron beam.
Claim 11
Dependent Claim
34 words
A method as claimed in claim 8, characterized in that the polysiloxane employed behaves differently against removal with a suitable liquid when having been exposed to the irradiation as compared to the unirradiated polysiloxane.
Claim 12
Dependent Claim
13 words
A method of claim 1 characterized in that the polysiloxane comprises cyclosiloxane rings.
Claim 13
Dependent Claim
15 words
A method as claimed in claim 11, characterized in that the polysiloxane comprises cyclotrisiloxane rings.
Claim 14
Dependent Claim
15 words
A method as claimed in claim 11, characterized in that the polysiloxane comprises cyclotetrasiloxane rings.
Claim 15
Dependent Claim
21 words
A method as claimed in claim 11, characterized in that the silicon atoms of the rings are bonded to aliphatic groups.
Claim 16
Dependent Claim
24 words
A method as claimed in claim 14, characterized in that the aliphatic groups are chosen from the class of methyl, ethyl and vinyl groups.
Claim 17
Dependent Claim
26 words
A method as claimed in claim 11 characterized in that at least part of the rings are bonded to each other by means of oxygen bridges.
Claim 18
Dependent Claim
59 words
A method as claimed in claim 16 characterized in that the polysiloxane comprises an at least partly polymerized mixture of 2,4,6 tri-organyl, 2,4,6 trihydroxy cyclotrisiloxane and 2,4,6,8 tetraorganyl, 2,4,6,8 tetrahydroxy-cyclotetrasiloxane in which part of the hydroxy groups bonded to opposing silicon atoms in the cyclotetrasiloxane rings may be replaced by oxygen bridges and the organyl groups are aliphatic groups.
Claim 19
Dependent Claim
21 words
A method as claimed in claim 1, characterized in that the phosphorus compound is introduced in an already deposited polysiloxane layer.
Claim 20
Dependent Claim
19 words
A method as claimed in claim 18, characterized in that the phosphorus compound is introduced from the gaseous phase.
Claim 21
Dependent Claim
19 words
A method as claimed in claim 18, characterized in that the phosphorus compound is introduced from a liquid phase.
Claim 22
Dependent Claim
15 words
A method as claimed in claim 18 characterized in that the phosphorus compound contains halogen.
Claim 23
Dependent Claim
15 words
A method as claimed in claim 21, characterized in that the compound is phosphorus oxychloride.
Claim 24
Dependent Claim
24 words
A method of claim 18 characterized in that the polysiloxane layer is confined to the predetermined pattern before introducing the phosphorus compound into it.
Claim 25
Dependent Claim
19 words
A method of claim 1, characterized in that the phosphorus compound is codeposited with the polysiloxane onto the substrate.
Claim 26
Dependent Claim
17 words
A method as claimed in claim 24, characterized in that the compound contains phosphorus bonded to oxygen.
Claim 27
Dependent Claim
14 words
A method as claimed in claim 25, characterized in that the compound comprises silicon.
Claim 28
Dependent Claim
15 words
A method as claimed in claim 26, characterized in that the compound comprises organic groups.
Claim 29
Dependent Claim
16 words
A method as claimed in claim 27, characterized in that the organic groups are aliphatic groups.
Claim 30
Dependent Claim
23 words
A method as claimed in claim 28, characterized in that the aliphatic groups are of the class of methyl, ethyl and vinyl groups.
Claim 31
Dependent Claim
17 words
A method as claimed in claim 29, characterized in that the organic groups are bonded to silicon.
Claim 32
Dependent Claim
24 words
A method as claimed in claim 30 characterized in that the compound is tri- (di-organosilylene) diPhosphate in which ''''organo'''' stands for the organic groups.
Claim 33
Dependent Claim
90 words
A method as claimed in claim 24, characterized in that the substrate is formed with a layer pattern comprising polysiloxane subjected to irradiation according to said pattern after which the codeposition of the phosphorus compound and polysiloxane is performed onto the substrate and the co-deposited material is further polymerized according to the desired pattern by graft-polymerisation induced by the irradiated material of the polysiloxane underneath said layer according to the said irradiated pattern after which the portions of the codeposited layer which were not subjected to the graft-polymerization are removed.
Claim 34
Dependent Claim
20 words
A method as claimed in claim 32, characterized in that the polysiloxane codeposited with the phosphorus compound comprises vinyl groups.
Claim 35
Dependent Claim
21 words
A method as claimed in claim 32, characterized in that the graft-polymerization is carried out by heating in an oxygen-free atmosphere.
Claim 36
Dependent Claim
23 words
A device, more specially a semiconductor device, comprising s phosphate glass layer pattern as produced by a method as claimed in claim 1.
References Cited (Backward Citations)
US3055776A
Cited
US3760242A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-04-14 | 1978-10-14 | 1979-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-04-14 | 1982-10-14 | 1983-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-04-14 | 1986-10-14 | 1987-04-15 | $7700.00 | Window Closed / Lapsed |