Method of hermetically sealing semiconductor devices

Claim 1

An electroplated microwave encapsulation process for a semiconductor being comprised of the step of forming a dielectric sleeve of ceramic for microwave utilization having an inner and outer circumference, a two step structure at one end and a flat surface at the other end, the two step structure having the first step thereof extending partially outwardly from the inner circumference toward the outer circumference of the dielectric sleeve, the first and second step being interconnected to form a rim, the step of metallizing with platinum the surfaces of the two step structure, the flat end of the dielectric sleeve and the outer circumference of the dielectric sleeve, the step of brazing the metallized dielectric flat end onto a metal stud in the form of a brazed joint with said semiconductor being positioned in the center of the brazed joint, painting the surface of the first step and the rim with a viscose conductive material, placing a metal lid having a top surface with said first step and fitting tightly into said rim, said top surface of said metal lid and said second step providing a flush surface, the step of electroforming a metal layer on said flush surface after the hardening of said viscose conductive material, and the step of gold barrel plating for final gold finishing on the entire metal surface exposed to the air.