Zone plate alignment marks

Claim 2

A mask member for use in fabricating microminiature devices, said member comprising a relatively transparent substrate having a selectively patterned relatively opaque layer disposed on said substrate, said selectively patterned layer having formed therein at least one alignment mark pattern, said alignment mark pattern, when illuminated by incident radiation, forming a focused image in a reference plane that is spaced apart a predetermined distance from said forming means.

Claim 3

A member as in claim 1 wherein said alignment mark pattern comprises a circular zone plate pattern which when illuminated by incident monochromatic radiation forms a focused spot in said reference plane.

Claim 4

A wafer member adapted to have formed on the surface thereof multiple microminiature devices, said member comprising a semiconductor substrate and an alignment mark pattern formed on the surface of said substrate, said pattern, when illuminated by incident radiation, forming a focused image in a reference plane that is spaced apart a predetermined distance from said forming means.

Claim 5

A wafer member adapted to have formed on the surface thereof multiple microminiature devices, said member comprising a semiconductor substrate and an alignment mark pattern formed on the surface of said substrate, said pattern, when illuminated by incident radiation, forming a focused image in a reference plane that is spaced apart a predetermined distance from said forming means.

Claim 6

A member as in claim 3 wherein said alignment mark pattern comprises a circular zone plate pattern which when illuminated by incident monochromatic radiation forms a focused spot in said reference plane.

Claim 7

In the fabrication of integrated circuits, a method for aligning a semiconductor wafer, said method comprising the steps of forming on a portion of the surface of said wafer a pattern that when illuminated by incident radiation forms a high-intensity focused image at a prescribed distance from said surface in a reference plane, directing radiation at said pattern, and moving the surface of said wafer in a plane parallel to said reference plane until said image is detected to occur in a predetermined location in said reference plane.

Claim 8

In the fabrication of integrated circuits, a method for aligning a semiconductor wafer, said method comprising the steps of forming on a portion of the surface of said wafer a pattern that when illuminated by incident radiation forms a high-intensity focused image at a prescribed distance from said surface in a reference plane, directing radiation at said pattern, and moving the surface of said wafer in a plane parallel to said reference plane until said image is detected to occur in a predetermined location in said reference plane.

Claim 9

A method as in claim 5 wherein said forming step comprises forming on said wafer a circular zone plate, and wherein said directing step comprises directing a beam of monochromatic radiation at said zone plate thereby to form a high-intensity focused spot in said reference plane.

Claim 10

In the fabrication of integrated circuits, a method for aligning a mask member with respect to a semiconductor wafer, said method comprising the steps of forming patterns on said mask and wafer that when illuminated by incident radiation form respective high-intensity focused images at prescribed distances from said mask and wafer in a reference plane, directing radiation at said patterns, and varying the relative positions of said mask and wafer until said images are detected to occur in a predetermined location in said reference plane.

Claim 11

In the fabrication of integrated circuits, a method for aligning a mask member with respect to a semiconductor wafer, said method comprising the steps of forming patterns on said mask and wafer that when illuminated by incident radiation form respective high-intensity focused images at prescribed distances from said mask and wafer in a reference plane, directing radiation at said patterns, and varying the relative positions of said mask and wafer until said images are detected to occur in a predetermined location in said reference plane.

Claim 12

A method as in claim 7 wherein said forming step comprises forming on each of said mask and wafer a circular zone plate pattern, and wherein said directing step comprises directing a beam of monochromatic radiation at said zone plates thereby to form high-intensity focused spots in said reference plane.

Claim 13

Apparatus for aligning a semiconductor wafer of the type that includes on a surface portion of the wafer means that when illuminated by incident radiation forms a high-intensity focused image at a prescribed distance from said surface in a reference plane, said apparatus comprising: a movable table for carrying said wafer, means for directing radiation at said forming means on said wafer thereby to form a high-intensity focused image in said reference plane, and means responsive to the location of said image in said plane for applying control signals to said table to move said wafer to a predetermined position.

Claim 14

Apparatus for aligning a semiconductor wafer of the type that includes on a surface portion of the wafer means that when illuminated by incident radiation forms a high-intensity focused image at a prescribed distance from said surface in a reference plane, said apparatus comprising: a movable table for carrying said wafer, means for directing radiation at said forming means on said wafer thereby to form a high-intensity focused image in said reference plane, and means responsive to the location of said image in said plane for applying control signals to said table to move said wafer to a predetermined position.

Claim 15

Apparatus as in claim 9 wherein said directing means comprises a source of monochromatic radiation, a beam splitter responsive to incident radiation from said source for directing a portion of said radiation toward said forming means, and a lens interposed between said beam splitter and said forming means for focusing said incident radiation to a spot in said reference plane, and wherein said applying means comprises a photodetecting arrangement, and a lens interposed between said beam splitter and said photodetecting arrangement in the path of radiation reflected from said forming means for focusing said reflected radiation onto said photodetecting arrangement.

Claim 16

Apparatus for aligning a mask member with respect to a semiconductor wafer, said mask member and said wafer including on a surface portion thereof means that when illuminated by incident radiation forms respective high-intensity focused images at prescribed distances from said mask and wafer in a reference plane, said apparatus comprising means for directing radiation at said forming means thereby to form focused images in said plane, and means responsive to the relative locations of said images in said plane for varying the relative positions of said mask and wafer until said images are detected to occur in a predetermined location in said reference plane.

Claim 17

Apparatus for aligning a mask member with respect to a semiconductor wafer, said mask member and said wafer including on a surface portion thereof means that when illuminated by incident radiation forms respective high-intensity focused images at prescribed distances from said mask and wafer in a reference plane, said apparatus comprising means for directing radiation at said forming means thereby to form focused images in said plane, and means responsive to the relative locations of said images in said plane for varying the relative positions of said mask and wafer until said images are detected to occur in a predetermined location in said reference plane.

Claim 18

Apparatus as in claim 11 wherein said forming means comprises a circular zone plate on each of said mask and wafer wherein said directing means comprises a source of monochromatic radiation, a beam splitter responsive to incident radiation from said source for directing a portion of said radiation toward said forming means, and a lens interposed between said beam splitter and said forming means for focusing said incident radiation to a spot in said reference plane and wherein said varying means comprises a photodetecting arrangement, a lens interposed between said beam splitter and said photodetecting arrangement in the path of radiation reflected from said forming means for focusing said reflected radiation onto said photodetecting arrangement, and means responsive to signals generated by said photodetecting arrangement for mechanically controlling the relative positions of said mask and said wafer.