High-power semiconductive devices

Claim 1

In a high-power semiconductive device including an active semiconductive element symmetrically disposed about a first axis, the elements containing at least one P-N junction and including at least first and second axially spaced, opposed terminal regions associated with such junction, mutually insulated means for supplying current to and receiving current from the first and second terminal regions, and means including a conductive liquid for providing conductive contact between the current supplying and receiving means and the respective terminal regions of the element, the improvement wherein the device further comprises an annular insulation ring coaxial with and surrounding the element, the radially inner surface of the insulating ring being disposed in intimate contact with the outer periphery of the element intermediate the axially opposite surfaces of the ring; wherein the current supplying and receiving means comprises first and second conductive tubes coaxial with and disposed on axially opposite sides of the element, the boundary walls of the first and second tubes being aligned with the opposed axial surfaces of the insulating ring, the inner ends of the first and second tubes being of reduced width and disposed in intimate contact with the axially opposite surfaces of the insulating ring; and wherein the device further comprises a pair of thin conductive plates extending across and substantially closing the interior of the respective first and second tubes in spaced relation to the ends of the tubes to individually define, with the associated ends of the tubes and the opposed terminal regions of the elements, first and second mutually insulated closed chambers, the conductive liquid filling each of the closed chambers.