Silicon single crystal charge storage diode

Claim 1

A photodiode for an alternating current driven light valve of the type wherein the photocapacitance of a light responsive semiconductor layer of said diode which is supported on a transparent substrate of said valve to receive light transmitted therethrough can be modulated in response to changes in the intensity of such incident light, the improvement in said diode comprising: (a) first and second semiconductor layers forming the rectifying junction of a charge storage photodiode; (b) said first layer being a light responsive single crystal silicon photoconductor the photocapacitance of which can be modulated in response to changes in the intensity of said incident light and said second layer being a semiconductor having a polarity opposite to that of said first layer; (c) said first layer comprising a first region of semiconductor material having a low density of defect centers and a second region of semiconductor material having a higher density of defect centers, said second region being contiguous with said junction and said first region being contiguous with said second region and being exposed to receive said incident light which is effective to generate charge carriers which are stored in said second region and which change the photocapacitive depletion width adjacent said junction to enhance the sensitivity of said diode, the defect centers of said second region of said single crystal silicon first layer forming slow recombination centers.