Patent US3283450A successfully refreshed from Google Patents.
US4032948A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface charge launching apparatus
Assignee: General Electric Co
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Filing: 1973-02-12
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Granted: 1977-06-28
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Expires: 1993-02-12
Abstract
Abstract Methods for storing and transferring electrical charges between adjacently spaced storage regions in semiconductor substrate are disclosed. In one embodiment, a plurality of adjacently spaced conductor members are insulatingly disposed over a major surface of a semiconductor substrate. Each storage region is separated from each other storage region by an electrical barrier region underlying the spacing between the adjacent conductor members. These barrier regions are controllably lowered by an electrode interposed between adjacent conductor members. Electrical charges stored in one storage region are transferred to an adjacent storage region by applying a voltage signal to the interposed electrode to lower the barrier region between the adjacent storage regions. Direction of charge transfer is controlled by the relative surface potentials of the adjacent storage regions and the magnitude of transfer is controlled by the height of the barrier region when lowered. Means for transferring partial charges are disclosed along with means for periodically regenerating charges to a predetermined level. Methods for transferring electrical charges with high efficiency of transfer are also disclosed.
Inventors
- 👤 William E. Engeler
- 👤 Jerome J. Tiemann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 00:25
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/452
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
383 words
Device for introducing levels of charge in surface charge apparatus in accordance with an information bearing signal comprising a semiconductor substrate of one conductivity type having a surface adjacent portion, a first conductive member insulatingly overlying said surface adjacent portion of said substrate, means for applying a first biasing voltage to said first conductive member with respect to said substrate to form a first depletion region in the surface-adjacent portion of said substrate underlying said first conductive member having a surface potential of a first value in the absence of minority carriers in said first depletion region, a region of opposite conductivity type in said surface adjacent portion of said substrate spaced from said depletion region, a barrier region in said substrate between said region of opposite conductivity and said first depletion region, means for applying a second biasing voltage to said region of opposite conductivity type with respect to said substrate to provide a potential in said region of opposite conductivity type of a second value with respect to said substrate, the surface potential of said depletion region of said first value being energetic lower than the potential of said second value for minority carriers in said substrate, a second conductive member insulatingly overlying said barrier region, means for applying a control voltage between said second conductive member and said substrate for lowering the surface potential of said barrier region to a third value lower than said second value to cause the surface potential of said first depletion region to equilibrate with the potential of said region of opposite conductivity type thereby to establish in said first depletion region a predetermined level of charge dependent on said first and second values of voltage, a plurality of spaced conductor members insulatingly overlying the surface adjacent portion of said substrate to form an information storage and transfer channel for the transfer of electrical charge along the surface adjacent portion of said substrate, means for applying periodic phase related voltages to said spaced conductor members to incrementally move charge in said storage and transfer channel, means for maintaining said first biasing voltage fixed during a period of said phase related voltages, means for periodically transferring charge introduced in said first depletion region into a depletion region of said storage and transfer channel for transfer therealong.
Claim 2
Dependent Claim
383 words
Device for introducing levels of charge in surface charge apparatus in accordance with an information bearing signal comprising a semiconductor substrate of one conductivity type having a surface adjacent portion, a first conductive member insulatingly overlying said surface adjacent portion of said substrate, means for applying a first biasing voltage to said first conductive member with respect to said substrate to form a first depletion region in the surface-adjacent portion of said substrate underlying said first conductive member having a surface potential of a first value in the absence of minority carriers in said first depletion region, a region of opposite conductivity type in said surface adjacent portion of said substrate spaced from said depletion region, a barrier region in said substrate between said region of opposite conductivity and said first depletion region, means for applying a second biasing voltage to said region of opposite conductivity type with respect to said substrate to provide a potential in said region of opposite conductivity type of a second value with respect to said substrate, the surface potential of said depletion region of said first value being energetic lower than the potential of said second value for minority carriers in said substrate, a second conductive member insulatingly overlying said barrier region, means for applying a control voltage between said second conductive member and said substrate for lowering the surface potential of said barrier region to a third value lower than said second value to cause the surface potential of said first depletion region to equilibrate with the potential of said region of opposite conductivity type thereby to establish in said first depletion region a predetermined level of charge dependent on said first and second values of voltage, a plurality of spaced conductor members insulatingly overlying the surface adjacent portion of said substrate to form an information storage and transfer channel for the transfer of electrical charge along the surface adjacent portion of said substrate, means for applying periodic phase related voltages to said spaced conductor members to incrementally move charge in said storage and transfer channel, means for maintaining said first biasing voltage fixed during a period of said phase related voltages, means for periodically transferring charge introduced in said first depletion region into a depletion region of said storage and transfer channel for transfer therealong.
Claim 3
Dependent Claim
26 words
The device of claim 1 in which said second conductive member insulatingly overlies a portion of said first conductive member as well as said barrier region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-06-27 | 1980-12-27 | 1981-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-06-27 | 1984-12-27 | 1985-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-06-27 | 1988-12-27 | 1989-06-28 | $7700.00 | Window Closed / Lapsed |