Patent US4032892A successfully refreshed from Google Patents.
US4032892A
Expired / Lapsed
US
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Semiconductor speech channel switch
Assignee: Hitachi Ltd
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Filing: 1975-12-22
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Granted: 1977-06-28
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Expires: 1995-12-22
Abstract
Abstract A semiconductor speech path switch selectively connects a transmitting circuit which is connected with a row line to one of a plurality of receiving circuits which are respectively connected with associated column lines, the row lines and column lines forming a matrix of signal transmission lines. The switch includes a plurality of PNPN switching elements respectively connected across row and column lines of the matrix, a plurality of diodes for triggering the respective switching elements and a plurality of control gate lines connected with the diodes for triggering each switching element. Control signals are applied to input terminals of respective switching circuits to selectively energize the individual PNPN switching elements during the presence of a control signal supplied thereto. In the absence of the control signal, the control gate lines are shunted to ground to prevent cross-talk interference and erroneous triggering of non-selected PNPN switching elements.
Inventors
- 👤 Mitsuo Matsuyama
- 👤 Shinzi Okuhara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:21
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H03K17/72; H03K17/735; H04; H04Q; H04Q3/00; H04Q3/42; H04Q3/52; H04Q3/521
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
272 words
In a semiconductor speech path switch arrangement for selectively connecting a transmitting circuit, which is connected to a prescribed row line of a matrix made up of m rows and n columns of signal transmission lines where m is an integer and n is an integer greater than 1, to a receiving circuit connected with one of the column lines of signal transmission lines, said arrangement including an m×n matrix of PNPN switching elements, each element having an anode connected to a respective row line, a cathode connected to a respective column line, and a control gate for receiving a control signal to render said element conductive to interconnect the row line and the column line to which said element is connected and thereby provide a signal transmission path from a transmitting circuit through said matrix to a receiving circuit, and a number m of control gate lines respectively connected through diodes to the control gate of the m rows of said PNPN switching elements, by way of which said control signal is applied to control gate of the PNPN switching elements; the improvement comprising switching means, connected to each respective control gate line and having respective input terminals to which control signals are applied, for coupling a respective control signal to a respective control gate line to thereby render a selected switching element conductive only during the application of a control signal to a respective input terminal, and for otherwise providing a low impedance shunt path for signals appearing on a respective control gate line away from the diodes connected to the control gates of a respective row of switching elements.
Claim 2
Dependent Claim
272 words
In a semiconductor speech path switch arrangement for selectively connecting a transmitting circuit, which is connected to a prescribed row line of a matrix made up of m rows and n columns of signal transmission lines where m is an integer and n is an integer greater than 1, to a receiving circuit connected with one of the column lines of signal transmission lines, said arrangement including an m×n matrix of PNPN switching elements, each element having an anode connected to a respective row line, a cathode connected to a respective column line, and a control gate for receiving a control signal to render said element conductive to interconnect the row line and the column line to which said element is connected and thereby provide a signal transmission path from a transmitting circuit through said matrix to a receiving circuit, and a number m of control gate lines respectively connected through diodes to the control gate of the m rows of said PNPN switching elements, by way of which said control signal is applied to control gate of the PNPN switching elements; the improvement comprising switching means, connected to each respective control gate line and having respective input terminals to which control signals are applied, for coupling a respective control signal to a respective control gate line to thereby render a selected switching element conductive only during the application of a control signal to a respective input terminal, and for otherwise providing a low impedance shunt path for signals appearing on a respective control gate line away from the diodes connected to the control gates of a respective row of switching elements.
Claim 3
Dependent Claim
39 words
The improvement according to claim 1, wherein said switching means includes a gate-triggering constant-voltage circuit, connected between a respective input terminal and a respective control gate line, for switching the output voltage thereof in response to said control signal.
Claim 4
Dependent Claim
39 words
The improvement according to claim 1, wherein said switching means includes a gate-triggering constant-current circuit, connected between a respective input terminal and a respective control gate line, for switching the output current thereof in response to said control signal.
Claim 5
Dependent Claim
22 words
The improvement according to claim 1, wherein said low impedance shunt path is provided between a respective control gate line and ground.
Claim 6
Dependent Claim
39 words
The improvement according to claim 4, wherein said switching means includes a field effect transistor having a drain connected to a respective control gate line, a source connected to ground, and a gate connected to a respective input terminal.
Claim 7
Dependent Claim
22 words
The improvement according to claim 5, further comprising a coupling resistor connected between the gate and drain of said field effect transistor.
Claim 8
Dependent Claim
123 words
A semiconductor speech channel switch as claimed in claim 1, characterized in that switching means comprises two transistors, two resistors and a d.c. power source, said two transistors being composed of a first and a second transistor, in which switching means the base of said first transistor is connected to the collector of said second transistor, the emitters of said first and second transistors being grounded, a series circuit composed of said first resistor and said a d.c. power source being connected between the base and emitter of said first transistor, the collector of said first transistor being connected to a respective control gate line, and the base of said second transistor being connected to a respective input terminal through said second resistor.
Claim 9
Dependent Claim
82 words
The improvement according to claim 3, wherein said gate-triggering constant-current circuit comprises a first transistor having a base coupled to a respective input terminal, a grounded emitter, and a collector, a second transistor having a base coupled to the collector of said first transistor, a collector connected to a respective control gate line and an emitter coupled to a source of bias voltage, and a constant voltage diode connected between said source of bias voltage and the base of said second transistor.
Claim 10
Dependent Claim
39 words
The improvement according to claim 8, wherein said switching means includes a field effect transistor having a drain connected to a respective control gate line, a source connected to ground, and a gate connected to a respective input terminal.
Claim 11
Dependent Claim
67 words
The improvement according to claim 8, wherein said switching means further comprises a third transistor having a base coupled through a further constant voltage diode to said source of bias voltage, a collector connected to a respective gate control line and an emitter coupled to ground through a diode, and a further diode connecting the collector of said first transistor to the base of said third transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-06-27 | 1980-12-27 | 1981-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-06-27 | 1984-12-27 | 1985-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-06-27 | 1988-12-27 | 1989-06-28 | $7700.00 | Window Closed / Lapsed |