Patent US4032865A successfully refreshed from Google Patents.
US4032865A
Expired / Lapsed
US
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Radial impedance matching device package
Assignee: Raytheon Co
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Filing: 1976-03-05
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Granted: 1977-06-28
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Expires: 1996-03-05
Abstract
Abstract Disclosed is an active radial-to-coaxial transmission line wherein an annular configured semiconductor device, such as an IMPATT diode, is embedded in a chosen dielectric material which is in turn positioned between two conductive members forming a radial transmission line. Advantageously, the lower conductive member of the transmission line also serves as a heat sink for the diode, and the upper conductive member of the radial transmission line may be formed as a highly conductive coating which makes good ohmic contact to the diode, thereby minimizing power losses at this contact. The radial transmission line transforms the relatively low impedance of the diode to a substantially higher value at the outer periphery thereof where contact to a coaxial transmission line may be achieved with good impedance matching, thereby maximizing power transfer between the radial and coaxial transmission lines.
Inventors
- 👤 Robert S. Harp
- 👤 Kenneth J. Russell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:22
CPC Classifications
H; H03; H03B; H03B9/00; H03B9/12; H03B9/14; H03B9/145; H01; H01P; H01P5/00; H01P5/08; H03B2009/126
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
170 words
An active transmission line structure for transforming the relatively low impedance of a semiconductor device to a higher impedance suitable for coupling to external microwave circuitry, including, in combination: (a) an active semiconductor device having an annular configuration with first and second opposed surfaces, (b) a first metal layer adjacent said first device surface and extending radially therefrom, (c) a second metal layer disposed on said second device surface and having a radial dimension which is substantially coextensive with a corresponding radial dimension of said first metal layer, and (d) a non-conducting wave propagating material between said first and second metal layers and adjacent said semiconductor device, and forming with said first and second metal layers a radial transmission line for transforming the relatively low impedance of said semiconductor device to a predetermined higher impedance at a predetermined radial distance away from said semiconductor device, whereby said radial transmission line may be connected at or near its periphery to other higher impedance microwave circuits and with good impedance matching characteristics.
Claim 2
Dependent Claim
170 words
An active transmission line structure for transforming the relatively low impedance of a semiconductor device to a higher impedance suitable for coupling to external microwave circuitry, including, in combination: (a) an active semiconductor device having an annular configuration with first and second opposed surfaces, (b) a first metal layer adjacent said first device surface and extending radially therefrom, (c) a second metal layer disposed on said second device surface and having a radial dimension which is substantially coextensive with a corresponding radial dimension of said first metal layer, and (d) a non-conducting wave propagating material between said first and second metal layers and adjacent said semiconductor device, and forming with said first and second metal layers a radial transmission line for transforming the relatively low impedance of said semiconductor device to a predetermined higher impedance at a predetermined radial distance away from said semiconductor device, whereby said radial transmission line may be connected at or near its periphery to other higher impedance microwave circuits and with good impedance matching characteristics.
Claim 3
Dependent Claim
25 words
The structure defined in claim 1 wherein said non-conducting material between said first and second metal layers is substantially coplanar with said active semiconductor device.
Claim 4
Dependent Claim
40 words
The structure defined in claim 1 wherein said non-conducting material between said first and second metal layers varies in thickness by a chosen amount along the radius thereof, thereby establishing the inductance and capacitance values for said radial transmission line.
Claim 5
Dependent Claim
31 words
The structure defined in claim 1 wherein said non-conducting material between said first and second metal layers is selected from the group of materials consisting of dielectrics, semiconductors and semi-insulating materials.
Claim 6
Dependent Claim
112 words
The structure defined in claim 1 which further includes: (a) a first conductor making electrical contact to said first metal layer at a predetermined distance from said semiconductor device, and (b) a second conductor making electrical contact to said second metal layer at another predetermined distance from said semiconductor device, so that said first and second conductors form a coaxial transmission line which is impedance matched to the impedance of said radial transmission line, whereby semiconductor devices with relatively large areas and relatively high power and current handling capabilities, and corresponding low impedances, may be efficiently coupled for optimum power transfer to said coaxial transmission line having a relatively high characteristic impedance.
Claim 7
Dependent Claim
14 words
The structure defined in claim 1 wherein said semiconductor device is an IMPATT diode.
Claim 8
Dependent Claim
14 words
The structure defined in claim 5 wherein said semiconductor device is an IMPATT diode.
Claim 9
Dependent Claim
52 words
The structure defined in claim 5 wherein said first metal layer is a metal plated heat sink for supporting said semiconductor device and said second metal layer is a thin highly conductive metal film which makes good ohmic contact to said semiconductor device to thereby minimize power losses at said ohmic contact.
Claim 10
Dependent Claim
52 words
The structure defined in claim 6 wherein said first metal layer is a metal plated heat sink for supporting said semiconductor device and said second metal layer is a thin highly conductive metal film which makes good ohmic contact to said semiconductor device to thereby minimize power losses at said ohmic contact.
Claim 11
Dependent Claim
27 words
The structure defined in claim 8 wherein said nonconducting material between said first and second metal layers is substantially coplanar with one surface of said semiconductor device.
Claim 12
Dependent Claim
40 words
The structure defined in claim 8 wherein said nonconducting material between said first and second metal layers varies in thickness by a predetermined amount along the radius thereof, thereby establishing the inductance and capacitance values of said radial transmission line.
Claim 13
Dependent Claim
37 words
The structure defined in claim 8 wherein said nonconducting wave propagating material between said first and second metal layers is selected from the group of materials consisting of dielectric materials, semi-insulating materials and high resistivity semiconductive materials.
Claim 14
Dependent Claim
166 words
A active transmission line structure for transforming the relatively low impedance of a semiconductor device to a higher impedance suitable for coupling to external microwave circuitry, including, in combination: (a) an annular semiconductor device with first and second opposed surfaces, (b) a first metal layer adjacent said first device surface and extending radially therefrom, (c) a second metal layer disposed on said second device surface and having a radial dimension which is substantially coextensive with a corresponding radial dimension of said first metal layer, and (d) a non-conducting wave propagating material between said first and second metal layers and adjacent said semiconductor device, and forming with said first and second metal layers a radial transmission line for transforming the relatively low impedance of said semiconductor device to a predetermined higher impedance at a predetermined radial distance away from said semiconductor device, whereby said radial transmission line may be connected at or near its periphery to other higher impedance microwave circuits and with good impedance matching characteristics.
Claim 15
Dependent Claim
166 words
A active transmission line structure for transforming the relatively low impedance of a semiconductor device to a higher impedance suitable for coupling to external microwave circuitry, including, in combination: (a) an annular semiconductor device with first and second opposed surfaces, (b) a first metal layer adjacent said first device surface and extending radially therefrom, (c) a second metal layer disposed on said second device surface and having a radial dimension which is substantially coextensive with a corresponding radial dimension of said first metal layer, and (d) a non-conducting wave propagating material between said first and second metal layers and adjacent said semiconductor device, and forming with said first and second metal layers a radial transmission line for transforming the relatively low impedance of said semiconductor device to a predetermined higher impedance at a predetermined radial distance away from said semiconductor device, whereby said radial transmission line may be connected at or near its periphery to other higher impedance microwave circuits and with good impedance matching characteristics.
Claim 16
Dependent Claim
112 words
The structure defined in claim 13 which further includes: (a) a first conductor making electrical contact to said first metal layer at a predetermined distance from said semiconductor device, and (b) a second conductor making electrical contact to said second metal layer at another predetermined distance from said semiconductor device, so that said first and second conductors form a coaxial transmission line which is impedance matched to the impedance of said radial transmission line, whereby semiconductor devices with relatively large areas and relatively high power and current handling capabilities, and corresponding low impedances, may be efficiently coupled for optimum power transfer to said coaxial transmission line having a relatively high characteristic impedance.
Claim 17
Dependent Claim
37 words
The structure defined in claim 14, wherein said nonconducting wave propagating material between said first and second metal layers is selected from the group of materials consisting of dielectric materials, semi-insulating materials and high resistivity semiconductive materials.
Claim 18
Dependent Claim
14 words
The structure defined in claim 15 wherein said semiconductor device is an IMPATT diode.
References Cited (Backward Citations)
US3516017A
Cited
US3469209A
Cited
US3624550A
Cited
US3701049A
Cited
US3644843A
Cited
US3894895A
Cited
US3916350A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-06-27 | 1980-12-27 | 1981-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-06-27 | 1984-12-27 | 1985-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-06-27 | 1988-12-27 | 1989-06-28 | $7700.00 | Window Closed / Lapsed |