US4031412A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Memory circuit
Assignee: Hitachi Ltd
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Filing: 1975-12-23
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Granted: 1977-06-21
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Expires: 1995-12-23
Abstract
Abstract A memory circuit comprises a semiconductor element circuit having equivalently a PNPN four-layer structure, at least an NPN transistor and a diode. An N-type emitter of the semiconductor element circuit is connected to the base of the NPN transistor, while a P-type base of the circuit is connected to the collector of the NPN transistor through the diode. The semiconductor element circuit has a positive feedback loop which is additionally provided with another feedback loop extending across the P-type base and the N-type emitter of the semiconductor element circuit, whereby in the ON holding state of the memory circuit the semiconductor element circuit is operated as a current stabilizing circuit and the transistor included in the additional feedback loop is stabilized in a controlled staturation state. The memory circuit can thus be operated at a high speed with a low power consumption.
Inventors
- 👤 Ichiro Ohhinata
- 👤 Shinzi Okuhara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:22
CPC Classifications
H; H03; H03K; H03K3/00; H03K3/02; H03K3/35; H03K3/352; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/411; G11C11/4113; H03K3/26; H03K3/28; H03K3/281; H03K3/286
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
130 words
A memory circuit comprising: a semiconductor element circuit having equivalently a PNPN four-layer structure including a P-type emitter, an N-type base, a P-type base and an N-type emitter; and at least an NPN transistor and a diode; and wherein said N-type emitter of said semiconductor element circuit is connected to the base of said NPN transistor, said P-type base of said semiconductor element circuit is connected to the anode of said diode, the cathode of said diode being connected to the collector of said NPN transistor, said collector being used for a current absorbing terminal, whereby the NPN transistor is adapted to be set to a controlled saturation state by feeding current externally to the collector of said NPN transistor to thereby maintain the memory circuit in the ON state.
Claim 2
Dependent Claim
130 words
A memory circuit comprising: a semiconductor element circuit having equivalently a PNPN four-layer structure including a P-type emitter, an N-type base, a P-type base and an N-type emitter; and at least an NPN transistor and a diode; and wherein said N-type emitter of said semiconductor element circuit is connected to the base of said NPN transistor, said P-type base of said semiconductor element circuit is connected to the anode of said diode, the cathode of said diode being connected to the collector of said NPN transistor, said collector being used for a current absorbing terminal, whereby the NPN transistor is adapted to be set to a controlled saturation state by feeding current externally to the collector of said NPN transistor to thereby maintain the memory circuit in the ON state.
Claim 3
Dependent Claim
34 words
A memory circuit according to claim 1, further comprising a resistor having one terminal connected with the N-type base of the semiconductor element circuit and another terminal being used for another current absorbing terminal.
Claim 4
Dependent Claim
25 words
A memory circuit according to claim 1, further comprising a resistor connected between the P-type emitter and the N-type base of the semiconductor element circuit.
Claim 5
Dependent Claim
164 words
A memory circuit comprising: a semiconductor element circuit having equivalently a PNPN four-layer structure including a P-type emitter, an N-type base, a P-type base and an N-type emitter; first, second and third resistors; at least an NPN transistor; and a diode; wherein said N-type emitter of said semiconductor element circuit is connected to the base of said NPN transistor and said P-type base of said semiconductor element circuit is connected to the anode of said diode, the cathode of said diode being connected to the collector of said NPN transistor, said collector being used for a current absorbing terminal, one terminal of said first resistor is connected to said N-type base of said semiconductor element circuit, the other terminal of said first resistor being used for another current absorbing terminal, the second resistor is connected between said P-type base and said N-type emitter of said semiconductor element circuit, and the third resistor is connected between the base and the emitter of said NPN transistor.
Claim 6
Dependent Claim
164 words
A memory circuit comprising: a semiconductor element circuit having equivalently a PNPN four-layer structure including a P-type emitter, an N-type base, a P-type base and an N-type emitter; first, second and third resistors; at least an NPN transistor; and a diode; wherein said N-type emitter of said semiconductor element circuit is connected to the base of said NPN transistor and said P-type base of said semiconductor element circuit is connected to the anode of said diode, the cathode of said diode being connected to the collector of said NPN transistor, said collector being used for a current absorbing terminal, one terminal of said first resistor is connected to said N-type base of said semiconductor element circuit, the other terminal of said first resistor being used for another current absorbing terminal, the second resistor is connected between said P-type base and said N-type emitter of said semiconductor element circuit, and the third resistor is connected between the base and the emitter of said NPN transistor.
Claim 7
Dependent Claim
159 words
A memory circuit comprising: a semiconductor element circuit having equivalently a PNPN four-layer structure including a P-type emitter, an N-type base, a P-type base and an N-type emitter; first, second, third and fourth resistors; at least an NPN transistor; and a diode; wherein said N-type emitter of said semiconductor element circuit is connected to the base of said NPN transistor, said P-type base of said semiconductor element circuit is connected to the anode of said diode, the cathode of said diode being coupled to the collector of said NPN transistor through the fourth resistor, one terminal of said first resistor is connected to said N-type base of said semiconductor element circuit, the other terminal of the first resistor being used for a current absorbing terminal, the second resistor is connected between said P-type base and said N-type emitter of said semiconductor element circuit, and the third resistor is connected between the base and the emitter of said NPN transistor.
Claim 8
Dependent Claim
159 words
A memory circuit comprising: a semiconductor element circuit having equivalently a PNPN four-layer structure including a P-type emitter, an N-type base, a P-type base and an N-type emitter; first, second, third and fourth resistors; at least an NPN transistor; and a diode; wherein said N-type emitter of said semiconductor element circuit is connected to the base of said NPN transistor, said P-type base of said semiconductor element circuit is connected to the anode of said diode, the cathode of said diode being coupled to the collector of said NPN transistor through the fourth resistor, one terminal of said first resistor is connected to said N-type base of said semiconductor element circuit, the other terminal of the first resistor being used for a current absorbing terminal, the second resistor is connected between said P-type base and said N-type emitter of said semiconductor element circuit, and the third resistor is connected between the base and the emitter of said NPN transistor.
Claim 9
Dependent Claim
199 words
A memory circuit comprising: a semiconductor element circuit having equivalently a PNPN four-layer structure including a P-type emitter used as an anode, an N-type base, a P-type base and an N-type emitter used as a cathode; first, second and third resistors; first, second and third diodes; and at least an NPN transistor, wherein said N-type emitter of said semiconductor element circuit is connected to the anode of said first diode, the cathode of said first diode being connected to the base of said NPN transistor, the cathode of said second diode is connected to the anode of said third diode, and said P-type base of said semiconductor element circuit is connected to the anode of said second diode, and cathode of said third diode is connected to the collector of said NPN transistor, one terminal of the first resistor is connected to said N-type base of said semiconductor element circuit and the other terminal of said first resistor being used for a current absorbing terminal, the second resistor is connected between said P-type base and said N-type emitter of said semiconductor element circuit, and the third resistor is connected between the base and the emitter of said NPN transistor.
Claim 10
Dependent Claim
199 words
A memory circuit comprising: a semiconductor element circuit having equivalently a PNPN four-layer structure including a P-type emitter used as an anode, an N-type base, a P-type base and an N-type emitter used as a cathode; first, second and third resistors; first, second and third diodes; and at least an NPN transistor, wherein said N-type emitter of said semiconductor element circuit is connected to the anode of said first diode, the cathode of said first diode being connected to the base of said NPN transistor, the cathode of said second diode is connected to the anode of said third diode, and said P-type base of said semiconductor element circuit is connected to the anode of said second diode, and cathode of said third diode is connected to the collector of said NPN transistor, one terminal of the first resistor is connected to said N-type base of said semiconductor element circuit and the other terminal of said first resistor being used for a current absorbing terminal, the second resistor is connected between said P-type base and said N-type emitter of said semiconductor element circuit, and the third resistor is connected between the base and the emitter of said NPN transistor.
Claim 11
Dependent Claim
101 words
A memory circuit comprising: a semiconductor element circuit having equivalently a PNPN four-layer structure including a P-type emitter, an N-type base, a P-type base and an N-type emitter and inherently having a positive feedback loop circuit; another feedback loop circuit in cooperation with the positive feedback loop circuit including an NPN transistor and at least one diode having its anode connected with said P-type base of said semiconductor element circuit and its cathode connected with the collector of said NPN transistor; and means for setting said NPN transistor in a controlled saturation state for maintaining the memory circuit in an ON-state.
Claim 12
Dependent Claim
101 words
A memory circuit comprising: a semiconductor element circuit having equivalently a PNPN four-layer structure including a P-type emitter, an N-type base, a P-type base and an N-type emitter and inherently having a positive feedback loop circuit; another feedback loop circuit in cooperation with the positive feedback loop circuit including an NPN transistor and at least one diode having its anode connected with said P-type base of said semiconductor element circuit and its cathode connected with the collector of said NPN transistor; and means for setting said NPN transistor in a controlled saturation state for maintaining the memory circuit in an ON-state.
Claim 13
Dependent Claim
16 words
A memory circuit according to claim 7, in which the semiconductor element circuit includes a thyristor.
Claim 14
Dependent Claim
39 words
A memory circuit according to claim 7, in which the base of the NPN transistor is connected to the N-type emitter of the semiconductor element circuit, the collector and the emitter being adapted to be supplied with respective biases.
Claim 15
Dependent Claim
149 words
A memory circuit comprising: a semiconductor element circuit having equivalent PNPN four-layer structure including a P-type emitter, an N-type base, a P-type base as the gate of said element circuit, and an N-type emitter and having an inherent positive feedback loop circuit; a further feedback loop circuit connected with said positive feedback loop circuit and including an NPN transistor and a diode, said diode being connected to shunt excess gate current from said PNPN element circuit and having its anode connected with the P-type base of said semiconductor element circuit and its cathode coupled to the collector of said NPN transistor, the N-type emitter of said element circuit being connected with the base of said NPN transistor, with the potential at the collector of said NPN transistor being clamped so that said NPN transistor is held in the shallow saturation state to maintain the memory circuit in the ON-state.
Claim 16
Dependent Claim
149 words
A memory circuit comprising: a semiconductor element circuit having equivalent PNPN four-layer structure including a P-type emitter, an N-type base, a P-type base as the gate of said element circuit, and an N-type emitter and having an inherent positive feedback loop circuit; a further feedback loop circuit connected with said positive feedback loop circuit and including an NPN transistor and a diode, said diode being connected to shunt excess gate current from said PNPN element circuit and having its anode connected with the P-type base of said semiconductor element circuit and its cathode coupled to the collector of said NPN transistor, the N-type emitter of said element circuit being connected with the base of said NPN transistor, with the potential at the collector of said NPN transistor being clamped so that said NPN transistor is held in the shallow saturation state to maintain the memory circuit in the ON-state.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-06-20 | 1980-12-20 | 1981-06-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-06-20 | 1984-12-20 | 1985-06-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-06-20 | 1988-12-20 | 1989-06-21 | $7700.00 | Window Closed / Lapsed |