Patent US4030084A successfully refreshed from Google Patents.
← Back to Patent Explorer
US4030084A Expired / Lapsed US ⏱️ 0.0 years remaining

Substrate bias voltage generated from refresh oscillator

Assignee: Bull HN Information Systems Inc
•
Filing: 1975-11-28
•
Granted: 1977-06-14
•
Expires: 1995-11-28
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract Apparatus and method for generating substrate bias for the refresh apparatus of volatile memory elements associated with data processing units. A refresh oscillator in the refresh apparatus is utilized to drive a chopper circuit or high level driver in combination with a rectifier network for obtaining raw negative voltage. The raw voltage is filtered and adjusted to the correct value on the metal oxide semiconductor (MOS) memory board and distributed to each random access memory (RAM).

Inventors

  • 👤 Edwin P. Fisher
  • 👤 Robert B. Johnson

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 19:15
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/406; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/205

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 153 words
In a metal-oxide semiconductor (MOS) memory array associated with a data processing unit wherein information in groups of said (MOS) memory elements is to be refreshed by a refresh means, apparatus for providing negative bias to said (MOS) memory array comprising: a. first means for providing a plus voltage to said MOS memory array relative to ground; b. second means in said (MOS) memory array coupled to said first means for providing rectangular wave refresh clock signals; c. third means responsive to the rectangular wave refresh clock signals for switching between the plus voltage and ground; d. fourth means coupled to said third means for alternately accumulating the positive charge and releasing the positive charge to ground, whereby an a.c. voltage is generated; e. fifth means coupled to said fourth means for rectifying the a.c. voltage signal; and f. sixth means coupled to said fifth means for filtering the rectified a.c. voltage signal.
Claim 2
Dependent Claim 153 words
In a metal-oxide semiconductor (MOS) memory array associated with a data processing unit wherein information in groups of said (MOS) memory elements is to be refreshed by a refresh means, apparatus for providing negative bias to said (MOS) memory array comprising: a. first means for providing a plus voltage to said MOS memory array relative to ground; b. second means in said (MOS) memory array coupled to said first means for providing rectangular wave refresh clock signals; c. third means responsive to the rectangular wave refresh clock signals for switching between the plus voltage and ground; d. fourth means coupled to said third means for alternately accumulating the positive charge and releasing the positive charge to ground, whereby an a.c. voltage is generated; e. fifth means coupled to said fourth means for rectifying the a.c. voltage signal; and f. sixth means coupled to said fifth means for filtering the rectified a.c. voltage signal.
Claim 3
Dependent Claim 27 words
The apparatus as recited in claim 1 including seventh means coupled to said fifth and sixth means for clamping the voltage signal to a predetermined minus value.
Claim 4
Dependent Claim 104 words
In a metal-oxide semiconductor (MOS) memory array associated with a data processing unit wherein information in groups of memory elements is to be refreshed by a refresh means, apparatus for providing negative bias to said (MOS) memory elements comprising: a. a capacitor; b. first means in said (MOS) memory array for providing rectangular wave refresh clock signals; c. second means, responsive to said first means and coupled to said capacitor for alternately charging and discharging said capacitor in response to the refresh clock signals thus generating an a.c. voltage signal; and, d. third means, coupled to said capacitor for rectifying said a.c. voltage signal.
Claim 5
Dependent Claim 104 words
In a metal-oxide semiconductor (MOS) memory array associated with a data processing unit wherein information in groups of memory elements is to be refreshed by a refresh means, apparatus for providing negative bias to said (MOS) memory elements comprising: a. a capacitor; b. first means in said (MOS) memory array for providing rectangular wave refresh clock signals; c. second means, responsive to said first means and coupled to said capacitor for alternately charging and discharging said capacitor in response to the refresh clock signals thus generating an a.c. voltage signal; and, d. third means, coupled to said capacitor for rectifying said a.c. voltage signal.
Claim 6
Dependent Claim 24 words
The apparatus as recited in claim 3 including fifth means coupled to said fourth means for clamping the voltage to a predetermined negative level.
Claim 7
Dependent Claim 21 words
The apparatus as recited in claim 4 including sixth means coupled to said fifth means for filtering the negative bias voltage.
Claim 8
Independent Claim 78 words
A method of providing negative bias to a MOS memory said MOS memory associated with a data processing unit wherein information in groups of memory elements is to be refreshed by said refresh apparatus, said method comprising: a. generating rectangular refresh signals within said MOS memory; b. generating, in response to said refresh signals, a.c. voltage signals; c. rectifying said a.c. voltage signals; d. filtering the voltage signals; e. clamping the generated voltage to a predetermined minus value.
Claim 9
Independent Claim 78 words
A method of providing negative bias to a MOS memory said MOS memory associated with a data processing unit wherein information in groups of memory elements is to be refreshed by said refresh apparatus, said method comprising: a. generating rectangular refresh signals within said MOS memory; b. generating, in response to said refresh signals, a.c. voltage signals; c. rectifying said a.c. voltage signals; d. filtering the voltage signals; e. clamping the generated voltage to a predetermined minus value.

References Cited (Backward Citations)

US3651494A Cited
US3760380A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1980-06-13 1980-12-13 1981-06-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1984-06-13 1984-12-13 1985-06-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1988-06-13 1988-12-13 1989-06-14 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag