Patent US4029527A successfully refreshed from Google Patents.
US4029527A
Expired / Lapsed
US
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Method of producing a doped zone of a given conductivity type in a semiconductor body
Assignee: Siemens AG
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Filing: 1975-06-18
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Granted: 1977-06-14
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Expires: 1995-06-18
Abstract
Abstract The "emitter-dip effect" is eliminated by applying a layer of an undoped polycrystalline semiconductor onto the surface of a select zone to be doped in a semiconductor body, for example, such as on the emitter zone of a silicon body and then diffusing a select dopant through the undoped polycrystalline semiconductor layer into the select zone of the semiconductor body.
Inventors
- 👤 Andreas Glasl
- 👤 Helmuth Murrmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:16
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/923
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
68 words
In a process of producing a n-conductivity type doped zone in a silicon semiconductor body wherein a silicon polycrystalline semiconductor layer is deposited on the surface of the zone to be doped, the improvement comprising: depositing an undoped silicon polycrystalline semiconductor layer on the surface of the zone to be doped; and diffusing PH 3 through said undoped polycrystalline layer and into said zone in the semiconductor body.
Claim 2
Dependent Claim
68 words
In a process of producing a n-conductivity type doped zone in a silicon semiconductor body wherein a silicon polycrystalline semiconductor layer is deposited on the surface of the zone to be doped, the improvement comprising: depositing an undoped silicon polycrystalline semiconductor layer on the surface of the zone to be doped; and diffusing PH 3 through said undoped polycrystalline layer and into said zone in the semiconductor body.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-06-13 | 1980-12-13 | 1981-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-06-13 | 1984-12-13 | 1985-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-06-13 | 1988-12-13 | 1989-06-14 | $7700.00 | Window Closed / Lapsed |