Patent US4027074A successfully refreshed from Google Patents.
US4027074A
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Process for producing ferroelectric crystalline material
Assignee: Leco Corp
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Filing: 1974-08-19
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Granted: 1977-05-31
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Expires: 1994-08-19
Abstract
Abstract Lead germanate, Pb 5 Ge 3 O 11 , or lead germanate/silicate in which up to 2/3 on a molar basis of the germanium has been substituted with silicon, can be formed from a glassy state to a ferroelectric state by a simple annealing process. The lead germanate or lead germanate/silicate is heated to a temperature sufficient to anneal it into a crystalline phase, then cooled below the ferroelectric transition temperature for the composition while an electric field is applied.
Inventors
- 👤 Leslie E. Cross
- 👤 Raymond J. Kunz
- 👤 Robert E. Newnham
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 14:15
CPC Classifications
H; H01; H01G; H01G7/00; H01G7/02; C; C03; C03C; C03C10/00; C03C10/0072; C30; C30B; C30B1/00; C30B1/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/32; C30B29/34
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
101 words
A process for producing a ferroelectric crystalline element, comprising the steps of: (1) forming a mass having the formula Pb 5 Ge.sub.(3 -x ) Si x O 11 , wherein x ranges from 0-2, in a glassy state; (2) heating said mass to a temperature between about 450° C. and the glass transition temperature of the composition to anneal the glassy mass into a crystalline mass; and (3) cooling the annealed mass while applying an electric field of about 15 to about 30 kilovolts/centimeter to a temperature below the ferroelectric transition temperature of the composition, to form a ferroelectric crystalline mass.
Claim 2
Dependent Claim
101 words
A process for producing a ferroelectric crystalline element, comprising the steps of: (1) forming a mass having the formula Pb 5 Ge.sub.(3 -x ) Si x O 11 , wherein x ranges from 0-2, in a glassy state; (2) heating said mass to a temperature between about 450° C. and the glass transition temperature of the composition to anneal the glassy mass into a crystalline mass; and (3) cooling the annealed mass while applying an electric field of about 15 to about 30 kilovolts/centimeter to a temperature below the ferroelectric transition temperature of the composition, to form a ferroelectric crystalline mass.
Claim 3
Dependent Claim
40 words
A process of claim 1, wherein the value of x is 0; wherein the temperature of annealing is between about 450° C. and 720° C.; and the annealed mass is cooled below a ferroelectric transition temperature of about 177° C.
Claim 4
Dependent Claim
34 words
A process according to claim 1, wherein the operations of heating and cooling while applying an electric field are carried out with the mass situated on the surface of a conductive or semiconductive substrate.
Claim 5
Dependent Claim
11 words
A ferroelectric crystalline element formed by the process in claim 3.
Claim 6
Dependent Claim
22 words
A process according to claim 3, wherein said substrate is selected from the group consisting of gold, silicon, germanium, and mixtures thereof.
Claim 7
Dependent Claim
12 words
A process according to claim 3, wherein said conductive substrate is gold.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-30 | 1980-11-29 | 1981-05-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-30 | 1984-11-29 | 1985-05-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-30 | 1988-11-29 | 1989-05-31 | $7700.00 | Window Closed / Lapsed |