Patent US4027053A successfully refreshed from Google Patents.
US4027053A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing polycrystalline silicon ribbon
Assignee: Motorola Solutions Inc
•
Filing: 1975-12-19
•
Granted: 1977-05-31
•
Expires: 1995-12-19
Abstract
Abstract A method of producing a ribbon of polycrystalline silicon, which includes contacting a moving surface carrying a layer of particulate semiconductor silicon, with a gaseous silicon source, is disclosed. The gaseous silicon source permeates the layer of particulate silicon and, with heat applied, deposits silicon that knits the silicon particles together to a continuous, coherent polycrystalline ribbon. The ribbon is then separated from the moving surface for further processing, for example, conversion to monocrystalline silicon.
Inventors
- 👤 Israel A. Lesk
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:28
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C30; C30B; C30B13/00; C30B29/00; C30B29/60; Y; Y10; Y10S; Y10S117/00; Y10S117/914; Y10S148/00; Y10S148/006; Y10S148/054; Y10S148/071; Y10S148/12; Y10S148/122
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
80 words
A method of producing a ribbon of polycrystalline semiconductor material comprising: providing a moving surface having disposed thereon a layer of particulate semiconductor silicon; providing a gaseous silicon source; heating said particulate silicon to a temperature sufficient to deposit silicon; contacting said gaseous silicon source with said particulate semiconductor silicon said temperature to deposit silicon from said source onto said silicon, said deposit of silicon joining said particulate semiconductor silicon together thereby forming a continuous, coherent ribbon of semiconductor material.
Claim 2
Independent Claim
80 words
A method of producing a ribbon of polycrystalline semiconductor material comprising: providing a moving surface having disposed thereon a layer of particulate semiconductor silicon; providing a gaseous silicon source; heating said particulate silicon to a temperature sufficient to deposit silicon; contacting said gaseous silicon source with said particulate semiconductor silicon said temperature to deposit silicon from said source onto said silicon, said deposit of silicon joining said particulate semiconductor silicon together thereby forming a continuous, coherent ribbon of semiconductor material.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein said temperature is achieved by heating subsequent to contact of said gaseous silicon source with said silicon.
Claim 4
Dependent Claim
20 words
The method of claim 2 wherein said heating is carried out by applying radiant energy to said particulate semiconductor silicon.
Claim 5
Dependent Claim
21 words
The method of claim 2 wherein said heating is carried out by applying a laser beam to said particulate semiconductor silicon.
Claim 6
Dependent Claim
13 words
The method of claim 3 wherein said moving surface is a transparent substrate.
Claim 7
Dependent Claim
27 words
The method of claim 2 wherein said heating is carried out by contacting said gaseous silicon source with said silicon in a furnace tube having transparent walls.
References Cited (Backward Citations)
US2989376A
Cited
US3042494A
Cited
US2840489A
Cited
US3021198A
Cited
US2999735A
Cited
US3012861A
Cited
US3012862A
Cited
US3900597A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-30 | 1980-11-29 | 1981-05-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-30 | 1984-11-29 | 1985-05-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-30 | 1988-11-29 | 1989-05-31 | $7700.00 | Window Closed / Lapsed |