US4024567A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having Al-Mn or Al-Mn-Si alloy electrodes
Assignee: Hitachi Ltd
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Filing: 1976-06-04
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Granted: 1977-05-17
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Expires: 1996-06-04
Abstract
Abstract A semiconductor device has a conductive layer for wiring which is made of an Al alloy containing Mn in an amount greater than 1 percent by weight and below 6 percent by weight. The semiconductor device has excellent corrosion resistance, and has a high reliability.
Inventors
- 👤 Seiichi Iwata
- 👤 Akitoshi Ishizaka
- 👤 Hiroshi Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:17
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12736; Y10T428/1275; Y10T428/12757
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
111 words
In a semiconductor device which has a conductive wiring layer having a predetermined pattern which extends on an insulating film provided on a semiconductor substrate and which is connected with predetermined regions within said substrate via openings provided in said insulating film, the improvement wherein said conductive wiring layer is made of material selected from the group consisting of an alloy having a composition containing 0.05 - 6 percent by weight of Mn, the remainder being composed essentially of Al, and an alloy having a composition containing 0.05 - 6 percent by weight of Mn and 0.8 - 5 percent by weight of Si, the remainder being composed essentially of Al.
Claim 2
Dependent Claim
111 words
In a semiconductor device which has a conductive wiring layer having a predetermined pattern which extends on an insulating film provided on a semiconductor substrate and which is connected with predetermined regions within said substrate via openings provided in said insulating film, the improvement wherein said conductive wiring layer is made of material selected from the group consisting of an alloy having a composition containing 0.05 - 6 percent by weight of Mn, the remainder being composed essentially of Al, and an alloy having a composition containing 0.05 - 6 percent by weight of Mn and 0.8 - 5 percent by weight of Si, the remainder being composed essentially of Al.
Claim 3
Dependent Claim
33 words
The semiconductor device according to claim 1, wherein said conductive wiring layer is made of an alloy containing 0.05 - 6 percent by weight of Mn, the remainder being composed essentially of Al.
Claim 4
Dependent Claim
25 words
The semiconductor device according to claim 2, wherein the quantity of Mn is greater than 1.0 percent by weight but below 6 percent by weight.
Claim 5
Dependent Claim
19 words
The semiconductor device according to claim 2, wherein the quantity of Mn is 1.5 - 6 percent by weight.
Claim 6
Dependent Claim
19 words
The semiconductor device according to claim 2, wherein the quantity of Mn is 2 - 6 percent by weight.
Claim 7
Dependent Claim
25 words
The semiconductor device according to claim 2, wherein the quantity of Mn is greater than 1.0 percent by weight but below 3.0 percent by weight.
Claim 8
Dependent Claim
42 words
The semiconductor device according to claim 1, wherein said conductive wiring layer is made of an alloy containing 0.05 - 6 percent by weight of Mn and 0.8 - 5 percent by weight of Si, the remainder being composed essentially of Al.
Claim 9
Dependent Claim
25 words
The semiconductor device according to claim 7, wherein the quantity of Mn is greater than 1.0 percent by weight but below 6 percent by weight.
Claim 10
Dependent Claim
19 words
The semiconductor device according to claim 7, wherein the quantity of Mn is 1.5 - 6 percent by weight.
Claim 11
Dependent Claim
19 words
The semiconductor device according to claim 7, wherein the quantity of Mn is 2 - 6 percent by weight.
Claim 12
Dependent Claim
25 words
The semiconductor device according to claim 7, wherein the quantity of Mn is greater than 1.0 percent by weight but below 3.0 percent by weight.
Claim 13
Dependent Claim
42 words
The semiconductor device according to claim 1, wherein said conductive wiring layer is made of an alloy containing 0.05 - 6 percent by weight of Mn and 2 - 3 percent by weight of Si, the remainder being composed essentially of Al.
Claim 14
Dependent Claim
13 words
The semiconductor device according to claim 1, wherein said semiconductor device is plastic-encapsulated.
Claim 15
Dependent Claim
17 words
The semiconductor device according to claim 7, wherein said semiconductor substrate is made of single crystal silicon.
Claim 16
Dependent Claim
17 words
The semiconductor device according to claim 8, wherein said semiconductor substrate is made of single crystal silicon.
Claim 17
Dependent Claim
13 words
The semiconductor device according to claim 3, wherein said semiconductor device is plastic-encapsulated.
Claim 18
Dependent Claim
13 words
The semiconductor device according to claim 8, wherein said semiconductor device is plastic-encapsulated.
Claim 19
Dependent Claim
17 words
The semiconductor device according to claim 3, wherein said conductive wiring layer is in contact with Au.
Claim 20
Dependent Claim
17 words
The semiconductor device according to claim 8, wherein said conductive wiring layer is in contact with Au.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-16 | 1980-11-15 | 1981-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-16 | 1984-11-15 | 1985-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-16 | 1988-11-15 | 1989-05-17 | $7700.00 | Window Closed / Lapsed |