US3922385A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solderable multilayer contact for silicon semiconductor
Assignee: Motors Liquidation Co
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Filing: 1974-10-29
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Granted: 1975-11-25
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Expires: 1994-10-29
Abstract
Abstract A multilayer solderable low resistance contact for N-type and Ptype regions on a semiconductor body comprising an aluminum layer directly on the semiconductor body, and a nickel alloy layer on the aluminum layer, in which the nickel alloy layer contains 1% 20% by weight manganese.
Inventors
- 👤 Mark L Konantz
- 👤 Ronald K Leisure
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:43
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; H10W72/00; H10W72/20
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
67 words
A METHOD OF FORMING AN IMPROVED SOLDERABLE MULTILAYER ELECTRODE ON A SILICON BODY COMPRISING THE STEPS OF: VACUUM DEPOSITING AN ALUMINUM LAYER AT LEAST ABOUT 3,000 ANGSTROMS THICK ONTO A SURFACE OF A SILICON BODY, HEATING SAID SILICON BODY AND SAID ALUMINUM LAYER TO SHALLOWLY ALLOY SAID SLUMINUM LAYER WITH SAID SILICON SURFACE AT THEIR INTERFACE AND REDUCE ELECTRICAL RESISTANCE BETWEEN SAID LAYER AND SAID SURFACE, AND
Claim 2
Independent Claim
67 words
A METHOD OF FORMING AN IMPROVED SOLDERABLE MULTILAYER ELECTRODE ON A SILICON BODY COMPRISING THE STEPS OF: VACUUM DEPOSITING AN ALUMINUM LAYER AT LEAST ABOUT 3,000 ANGSTROMS THICK ONTO A SURFACE OF A SILICON BODY, HEATING SAID SILICON BODY AND SAID ALUMINUM LAYER TO SHALLOWLY ALLOY SAID SLUMINUM LAYER WITH SAID SILICON SURFACE AT THEIR INTERFACE AND REDUCE ELECTRICAL RESISTANCE BETWEEN SAID LAYER AND SAID SURFACE, AND
Claim 3
Independent Claim
96 words
A method of forming a more adherent low resistance solderable multilayer electrode on a silicon surface comprising the steps of: vacuum depositing an aluminum layer about 5,000 - 15,000 angstroms thick onto a silicon surface, microalloying said aluminum layer to said silicon surface, wherein the electrical resistance therebetween is reduced and the aluminum layer is more intimately bonded to said silicon surface, and thereafter vacuum depositing an adherent solderable layer consisting essentially of nickel and about 1% - 10% by weight manganese onto said microalloyed aluminum layer to a thickness of about 3,000 - 5,000 angstroms.
Claim 4
Independent Claim
96 words
A method of forming a more adherent low resistance solderable multilayer electrode on a silicon surface comprising the steps of: vacuum depositing an aluminum layer about 5,000 - 15,000 angstroms thick onto a silicon surface, microalloying said aluminum layer to said silicon surface, wherein the electrical resistance therebetween is reduced and the aluminum layer is more intimately bonded to said silicon surface, and thereafter vacuum depositing an adherent solderable layer consisting essentially of nickel and about 1% - 10% by weight manganese onto said microalloyed aluminum layer to a thickness of about 3,000 - 5,000 angstroms.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-11-24 | 1979-05-26 | 1979-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-11-24 | 1983-05-26 | 1983-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-11-24 | 1987-05-26 | 1987-11-25 | $7700.00 | Window Closed / Lapsed |