Patent US4024566A successfully refreshed from Google Patents.
US4024566A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Deep diode device
Assignee: General Electric Co
•
Filing: 1975-03-03
•
Granted: 1977-05-17
•
Expires: 1995-03-03
Abstract
Abstract When an aluminum-rich droplet is migrated along the [100] axis of a silicon crystal during a thermal gradient zone melting operation, a droplet is displaced appreciably from its thermal trajectory by dislocations it encounters in the crystal. This random walk of the droplet is minimized to enable preservation of the registry of deep diode arrays by maintaining a unidirectional thermal gradient a few degrees off the [100] axis.
Inventors
- 👤 Thomas R. Anthony
- 👤 Harvey E. Cline
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:40
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50; H10D; H10D99/00; H10P10/00; H10P10/12
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
178 words
A deep diode device comprising a matrix body of semiconductive material of first-type semiconductivity in the form of a single crystal having <100> axial orientation, a recrystallized region of semiconductive material of a second-type semiconductivity extending in a straight line into the matrix body, and a P-N junction at the interface between the matrix body crystal and the recrystallized region having its major axis disposed at an angle of 2° to 10° from the <100> axis of the single crystal toward a direction selected from the group consisting of the <010> and the <001> direction, said recrystallized region of semiconductive material being formed in situ by the migration of a melt of a metal-rich semiconductor material through the matrix body at a predetermined elevated temperature along a thermal gradient and being of substantially constant thickness throughout its length and having a constant uniform level of impurity concentration throughout its length as determined by the solid solubility limit of that metal of the melt in that semiconductor material of that matrix body at that predetermined elevated temperature of migration.
Claim 2
Dependent Claim
178 words
A deep diode device comprising a matrix body of semiconductive material of first-type semiconductivity in the form of a single crystal having <100> axial orientation, a recrystallized region of semiconductive material of a second-type semiconductivity extending in a straight line into the matrix body, and a P-N junction at the interface between the matrix body crystal and the recrystallized region having its major axis disposed at an angle of 2° to 10° from the <100> axis of the single crystal toward a direction selected from the group consisting of the <010> and the <001> direction, said recrystallized region of semiconductive material being formed in situ by the migration of a melt of a metal-rich semiconductor material through the matrix body at a predetermined elevated temperature along a thermal gradient and being of substantially constant thickness throughout its length and having a constant uniform level of impurity concentration throughout its length as determined by the solid solubility limit of that metal of the melt in that semiconductor material of that matrix body at that predetermined elevated temperature of migration.
Claim 3
Dependent Claim
30 words
The device of claim 1 in which the single crystal is silicon having medium dislocation density from 5 × 10 4 to 5 × 10 7 dislocations per square centimeter.
Claim 4
Dependent Claim
26 words
The device of claim 1 in which there are a plurality of recrystallized regions extending through the matrix body in straight lines parallel to each other.
Claim 5
Dependent Claim
31 words
The device of claim 1 in which the P-N junction extends through the matrix body substantially from one side to another of the single crystal and is free from random displacements.
References Cited (Backward Citations)
US2813048A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-16 | 1980-11-15 | 1981-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-16 | 1984-11-15 | 1985-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-16 | 1988-11-15 | 1989-05-17 | $7700.00 | Window Closed / Lapsed |