Patent US4019195A successfully refreshed from Google Patents.
US4019195A
Expired / Lapsed
US
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Semi-conductor device capable of supporting high amperages of inverse current
Assignee: Robert Bosch SA
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Filing: 1975-07-03
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Granted: 1977-04-19
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Expires: 1995-07-03
Abstract
Abstract The present invention relates to a surge arrester or transient voltage clipper device comprising a quasi-monocrystalline semiconductor (silicon for instance), with an extra large etch pit density or low-angle boundary grains. At these dislocation lines the dopant is present in a larger concentration, and multiple p +-n + junctions are formed preferentially at these grain boundaries as an external impurity of the opposite type to the background dopant is diffused preferentially through these dislocation lines.
Inventors
- 👤 Elias Munoz Merino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 22:41
CPC Classifications
H; H10; H10D; H10D99/00; H10D1/00; H10D1/40
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
96 words
A solid-state surge arrester device comprising a quasimonocrystalline semiconductor made up of a plurality of grains, said semiconductor containing a background dopant of one of the two types, n and p, of doping materials, and a layer of diffused dopant of the other type, wherein: said semiconductor contains grain boundries in sufficient number and of sufficiently low angle to cause an etch pit density in excess of 10 6 /cm 2 ; said grain boundries contain higher concentrations of said dopants than said grains; and said grain boundries form a plurality of p +n + junctions.
Claim 2
Dependent Claim
96 words
A solid-state surge arrester device comprising a quasimonocrystalline semiconductor made up of a plurality of grains, said semiconductor containing a background dopant of one of the two types, n and p, of doping materials, and a layer of diffused dopant of the other type, wherein: said semiconductor contains grain boundries in sufficient number and of sufficiently low angle to cause an etch pit density in excess of 10 6 /cm 2 ; said grain boundries contain higher concentrations of said dopants than said grains; and said grain boundries form a plurality of p +n + junctions.
Claim 3
Dependent Claim
32 words
A solid state surge arrester as claimed in claim 1, wherein a majority of said p +n + junctions enter into avalanche at a predetermined applied voltage, forming a multiple-path breakdown device.
Claim 4
Dependent Claim
22 words
A solid state surge arrester as claimed in claim 1, wherein said background dopant is p-type, and said diffused dopant is n-type.
Claim 5
Dependent Claim
22 words
A solid state surge arrester as claimed in claim 1, wherein said background dopant is n-type, and said diffused dopant is p-type.
References Cited (Backward Citations)
GB923513A
Cited
US3436282A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-04-18 | 1980-10-18 | 1981-04-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-04-18 | 1984-10-18 | 1985-04-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-04-18 | 1988-10-18 | 1989-04-19 | $7700.00 | Window Closed / Lapsed |