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Patent US4015284A successfully refreshed from Google Patents.
US4015284A
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Semiconductor photoelectron emission device
Assignee: Hamamatsu Terebi KK
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Filing: 1976-01-09
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Granted: 1977-03-29
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Expires: 1996-01-09
Abstract
Abstract Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.
Inventors
- 👤 Katsuo Hara
- 👤 Minoru Hagino
- 👤 Tokuzo Sukegawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:22
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/34; H01J9/00; H01J9/02; H01J9/12; H01J2201/00; H01J2201/34; H01J2201/342; H01J2201/3421; H01J2201/3423
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
115 words
A semiconductor photoelectron emission device comprising a p-type GaSb which is a direct transition type semiconductor, a layer of an intrinsic Ga 1 -x Al x Sb, wherein x is less than 1, a p-type Ga 1 -y Al y Sb layer, wherein y is less than x and larger than 0.4 which is a crossover point x c , an alkali metal or alkali metal-oxygen activation layer on the opposite side of said Ga 1 -y Al y Sb layer, and means for applying a bias voltage to junctions between said GaSb and Ga 1 -x Al x Sb, and between Ga 1 -x Al x Sb and Ga 1 -y Al y Sb.
Claim 2
Dependent Claim
115 words
A semiconductor photoelectron emission device comprising a p-type GaSb which is a direct transition type semiconductor, a layer of an intrinsic Ga 1 -x Al x Sb, wherein x is less than 1, a p-type Ga 1 -y Al y Sb layer, wherein y is less than x and larger than 0.4 which is a crossover point x c , an alkali metal or alkali metal-oxygen activation layer on the opposite side of said Ga 1 -y Al y Sb layer, and means for applying a bias voltage to junctions between said GaSb and Ga 1 -x Al x Sb, and between Ga 1 -x Al x Sb and Ga 1 -y Al y Sb.
Claim 3
Dependent Claim
35 words
The device of claim 1, wherein lattice sites of Ga 1 -x Al x Sb and Ga 1 -y Al y Sb have atoms thereof replaced with other atoms of In, Bi, As and P.
Claim 4
Dependent Claim
37 words
The device of claim 1, wherein said GaSb has an effective forbidden band of 0.7 to 1.25 eV and said p-type Ga 1 -y Al y Sb has an effective forbidden band of 1.25 to 1.6 eV.
Claim 5
Dependent Claim
24 words
The device of claim 1, wherein said Ga 1 -y Al y Sb has a thickness equivalent of less than the electron diffusion length.
Claim 6
Dependent Claim
115 words
A semiconductor photoelectron emission device comprising a p-type GaSb which is a direct transition type semiconductor, a layer of an n-type Ga 1 -x Al x Sb, wherein x is less than 1, a p-type Ga 1 -y Al y Sb layer, wherein y is less than x and larger than 0.4 which is the crossover point x c , an alkali metal or alkali metal-oxygen activation layer on the opposite side of said Ga 1 -y Al y Sb layer, and means for applying a bias voltage to junctions between said GaSb and Ga 1 -x Al x Sb, and between Ga 1 -x Al x Sb and Ga 1 -y Al y Sb.
Claim 7
Dependent Claim
115 words
A semiconductor photoelectron emission device comprising a p-type GaSb which is a direct transition type semiconductor, a layer of an n-type Ga 1 -x Al x Sb, wherein x is less than 1, a p-type Ga 1 -y Al y Sb layer, wherein y is less than x and larger than 0.4 which is the crossover point x c , an alkali metal or alkali metal-oxygen activation layer on the opposite side of said Ga 1 -y Al y Sb layer, and means for applying a bias voltage to junctions between said GaSb and Ga 1 -x Al x Sb, and between Ga 1 -x Al x Sb and Ga 1 -y Al y Sb.
Claim 8
Dependent Claim
14 words
The device of claim 5, wherein further comprising means for providing drift electric field.
Claim 9
Dependent Claim
35 words
The device of claim 5, wherein lattice sites of Ga 1 -x Al x Sb and Ga 1 -y Al y Sb have atoms thereof replaced with other atoms of In, Bi, As and P.
Claim 10
Dependent Claim
37 words
The device of claim 5, wherein said GaSb has an effective forbidden band of 0.7 to 1.25 eV and said p-type Ga 1 -y Al y Sb has an effective forbidden band of 1.25 to 1.6 eV.
Claim 11
Dependent Claim
24 words
The device of claim 5, wherein said Ga 1 -y Al y Sb has a thickness equivalent of less than the electron diffusion length.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-03-28 | 1980-09-27 | 1981-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-03-28 | 1984-09-27 | 1985-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-03-28 | 1988-09-27 | 1989-03-29 | $7700.00 | Window Closed / Lapsed |