High speed element of an integrated circuit with a majority carrier junction having a large current capability

Claim 1

An element of an integrated circuit comprising a semiconductor body having emitter, base and collector regions of a transistor with collector-base and base-emitter P-N junctions and a majority carrier junction formed on one surface of said body, said one surface further having an insulating layer thereon; said collector region comprising first and second spacedapart surface portions, said first surface portion being disposed laterally to one side of said base region at said one surface of said body and said second surface portion being continuous with said first portion in said body and disposed laterally to the opposite side of said base region at said one surface of said body, said base region separating said collector region into said first surface portion and said second surface portion at said one surface of said body, said base region being surrounded by said collector region in said body; said majority carrier junction being formed through an opening in said insulating layer by an electrode on said first surface portion of said collector region, an electrode ohmically contacting said base region through an opening in said insulating layer, a collector electrode being formed on said second surface portion of said collector region, an electrical conductor means providing electrical connections to said majority junction, base, collector and emitter electrodes and further effecting a continuous connection of said majority carrier junction electrode and said base electrode, whereby load current capability is improved without increasing storage time of said transistor.