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US4014822A
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Semiconductor ceramic composition
Assignee: Murata Manufacturing Co Ltd
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Filing: 1974-04-26
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Granted: 1977-03-29
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Expires: 1994-04-26
Abstract
Abstract A semiconductor ceramic composition consists essentially of 83.95 to 98.65 mol% of barium titanate, 0.13 to 0.45 mol% of manganese oxide, 0.20 to 15 mol% of silicon dioxide and 0.23 to 1.65 mol% of one or more oxides selected from the group consisting of oxides of rare earth elements, bismuth and antimony, the content of one or more oxides of said group being 0.10 to 1.20 mol% greater than that of manganese oxide. The semiconductor ceramic composition has a markedly high positive resistance temperature characteristic.
Inventors
- 👤 Nagao Fujikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 17:22
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/02; H01C7/022; H01C7/023; H01C7/025; C; C04; C04B; C04B35/00; C04B35/01; C04B35/46; C04B35/462; C04B35/465; C04B35/468; C04B35/4682; H01B; H01B1/00; H01B1/06; H01B1/08
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
95 words
A ceramic composition for making a semiconductor, said composition consisting essentially of 83.95 to 98.65 mol% of a basic composition composed of 47.0 to 50.0 mol% of barium oxide and 50.0 to 53.0 mol% of titanium dioxide, 0.13 to 0.45 mol% of manganese oxide, 0.2 to 15 mol% of silicon dioxide and 0.23 to 1.65 mol% of one or more oxides selected from the group consisting of oxides of rare earth elements, bismuth and antimony, the content of said one or more oxides being 0.10 to 120 mol% greater than the content of manganese oxide.
Claim 2
Dependent Claim
95 words
A ceramic composition for making a semiconductor, said composition consisting essentially of 83.95 to 98.65 mol% of a basic composition composed of 47.0 to 50.0 mol% of barium oxide and 50.0 to 53.0 mol% of titanium dioxide, 0.13 to 0.45 mol% of manganese oxide, 0.2 to 15 mol% of silicon dioxide and 0.23 to 1.65 mol% of one or more oxides selected from the group consisting of oxides of rare earth elements, bismuth and antimony, the content of said one or more oxides being 0.10 to 120 mol% greater than the content of manganese oxide.
Claim 3
Dependent Claim
42 words
A composition according to claim 1, wherein 0.05 to 40 mol% of barium oxide in the basic composition is replaced by the equivalent amount of one or more oxides selected from the group consisting of strontium oxide, calcium oxide and lead monoxide.
Claim 4
Dependent Claim
34 words
A composition according to claim 2, wherein the basic composition consists of 30.0 to 49.975 mol% of barium oxide, 0.025 to 20 mol% of strontium oxide and 50.0 to 53.0 mol% of titanium dioxide.
Claim 5
Dependent Claim
37 words
A composition according to claim 2, wherein the basic composition consists of 30.0 to 49.975 mol% of barium oxide, 0.025 to 20 mol% of strontium oxide and calcium oxide and 50.0 to 53.0 mol% of titanium dioxide.
Claim 6
Dependent Claim
37 words
A composition according to claim 2, wherein the basic composition consists of 30.0 to 49.975 mol% of barium oxide, 0.025 to 20 mol% of calcium oxide and lead monoxide, and 50.0 to 53.0 mol% of titanium dioxide.
Claim 7
Dependent Claim
30 words
A composition according to claim 1, wherein 0.05 to 40 mol% of titanium dioxide in the basic composition is replaced by the equivalent amount of zirconium oxide and/or stannic oxide.
Claim 8
Dependent Claim
20 words
A composition according to claim 1, wherein Al 2 O 3 is additionally incorporated in not more than 0.5 mol%.
Claim 9
Dependent Claim
109 words
A semiconductor comprising impurity-doped barium titanate, the chemical composition of said semiconductor, when measured in terms of the oxides making up said semiconductor, consisting essentially of 83.95 to 98.65 mol% of a basic composition composed of 47.0 to 50.0 mol% of barium oxide and 50.0 to 53.0 mol% of titanium dioxide, 0.13 to 0.45 mol% of manganese oxide, 0.2 to 15 mol% of silicon dioxide and 0.23 to 1.65 mol% of one or more oxides selected from the group consisting of oxides of rare earth elements, bismuth and antimony, the content of said one or more oxides being 0.10 to 1.20 mol% greater than the content of manganese oxide.
Claim 10
Dependent Claim
109 words
A semiconductor comprising impurity-doped barium titanate, the chemical composition of said semiconductor, when measured in terms of the oxides making up said semiconductor, consisting essentially of 83.95 to 98.65 mol% of a basic composition composed of 47.0 to 50.0 mol% of barium oxide and 50.0 to 53.0 mol% of titanium dioxide, 0.13 to 0.45 mol% of manganese oxide, 0.2 to 15 mol% of silicon dioxide and 0.23 to 1.65 mol% of one or more oxides selected from the group consisting of oxides of rare earth elements, bismuth and antimony, the content of said one or more oxides being 0.10 to 1.20 mol% greater than the content of manganese oxide.
Claim 11
Dependent Claim
41 words
The semiconductor of claim 8, wherein 0.05 to 40 mol% of barium oxide in the basic composition is replaced by the equivalent amount of one or more oxides selected from the group consisting of strontium oxide, calcium oxide and lead monoxide.
Claim 12
Dependent Claim
33 words
The semiconductor of claim 9, wherein the basic composition consists of 30.0 to 49.975 mol% of barium oxide, 0.025 to 20 mol% of strontium oxide and 50.0 to 53.0 mol% of titanium dioxide.
Claim 13
Dependent Claim
36 words
The semiconductor of claim 9, wherein the basic composition consists of 30.0 to 49.975 mol% of barium oxide, 0.025 to 20 mol% of strontium oxide and calcium oxide and 50.0 to 53.0 mol% of titanium dioxide.
Claim 14
Dependent Claim
36 words
The semiconductor of claim 9, wherein the basic composition consists of 30.0 to 49.975 mol% of barium oxide, 0.025 to 20 mol% of calcium oxide and lead monoxide, and 50.0 to 53.0 mol% of titanium dioxide.
Claim 15
Dependent Claim
29 words
The semiconductor of claim 8, wherein 0.05 to 40 mol% of titanium dioxide in the basic composition is replaced by the equivalent amount of zirconium oxide and/or stannic oxide.
Claim 16
Dependent Claim
19 words
The semiconductor of claim 8, wherein Al 2 O 3 is additionally incorporated in not more than 0.5 mol%.
Claim 17
Dependent Claim
102 words
A semiconductor ceramic consisting essentially of the fired reaction product obtained by firing an oxide composition consisting essentially of 83.95 to 98.65 mol% of a basic composition composed of 47.0 to 50.0 mol% of barium oxide and 50.0 to 53.0 mol% of titanium dioxide, 0.13 to 0.45 mol% of manganese oxide, 0.2 to 15 mol% of silicon dioxide and 0.23 to 1.65 mol% of one or more oxides selected from the group consisting of oxides of rare earth elements, bismuth and antimony, the content of said one or more oxides being 0.10 to 1.20 mol% greater than the content of manganese oxide.
Claim 18
Dependent Claim
102 words
A semiconductor ceramic consisting essentially of the fired reaction product obtained by firing an oxide composition consisting essentially of 83.95 to 98.65 mol% of a basic composition composed of 47.0 to 50.0 mol% of barium oxide and 50.0 to 53.0 mol% of titanium dioxide, 0.13 to 0.45 mol% of manganese oxide, 0.2 to 15 mol% of silicon dioxide and 0.23 to 1.65 mol% of one or more oxides selected from the group consisting of oxides of rare earth elements, bismuth and antimony, the content of said one or more oxides being 0.10 to 1.20 mol% greater than the content of manganese oxide.
Claim 19
Dependent Claim
41 words
The semiconductor of claim 15, wherein 0.05 to 40 mol% of barium oxide in the basic composition is replaced by the equivalent amount of one or more oxides selected from the group consisting of strontium oxide, calcium oxide and lead monoxide.
Claim 20
Dependent Claim
33 words
The semiconductor of claim 16, wherein the basic composition consists of 30.0 to 49.975 mol% of barium oxide, 0.025 to 20 mol% of strontium oxide and 50.0 to 53.0 mol% of titanium dioxide.
Claim 21
Dependent Claim
36 words
The semiconductor of claim 16, wherein the basic composition consists of 30.0 to 49.975 mol% of barium oxide, 0.025 to 20 mol% of strontium oxide and calcium oxide and 50.0 to 53.0 mol% of titanium dioxide.
Claim 22
Dependent Claim
36 words
The semiconductor of claim 16, wherein the basic composition consists of 30.0 to 49.975 mol% of barium oxide, 0.025 to 20 mol% of calcium oxide and lead monoxide, and 50.0 to 53.0 mol% of titanium dioxide.
Claim 23
Dependent Claim
29 words
The semiconductor of claim 15, wherein 0.05 to 40 mol% of titanium dioxide in the basic composition is replaced by the equivalent amount of zirconium oxide and/or stannic oxide.
Claim 24
Dependent Claim
24 words
The semiconductor of claim 15, wherein said oxide composition further contains Al 2 O 3 in an amount of not more than 0.5 mol%.
References Cited (Backward Citations)
US3373120A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-03-28 | 1980-09-27 | 1981-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-03-28 | 1984-09-27 | 1985-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-03-28 | 1988-09-27 | 1989-03-29 | $7700.00 | Window Closed / Lapsed |