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US4010534A
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Process for making a deep diode atomic battery
Assignee: General Electric Co
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Filing: 1975-06-27
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Granted: 1977-03-08
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Expires: 1995-06-27
Abstract
Abstract A process for making a deep diode atomic battery embodies thermal gradient zone melting techniques for fabricating the structure thereof. Thermal gradient zone melting may also be employed to provide the battery with a radioactive source for energizing the battery.
Inventors
- 👤 Thomas R. Anthony
- 👤 Harvey E. Cline
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:13
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/29; C; C30; C30B; C30B13/00; C30B13/02; G; G21; G21H; G21H1/00; G21H1/06; H10P; H10P95/00; H10P95/50
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
323 words
A process for making a deep diode atomic battery comprising the steps of: a. selecting a body of single crystal semiconductor material so that the body has a first type conductivity, a selected resistivity, and at least one major surface having a preferred planar crystal structure orientation which is one selected from the group consisting of (100), (110) and (111), the vertical axis of the body being substantially aligned with a first axis of the crystal structure; b. etching selectively the surface having the preferred planar crystal structure orientation to form at least one array of depressions in the surface; c. vapor depositing a layer of a metal in the depressions of the at least one array on the selected surface of the body of semiconductor material; d. heating the body and the metal to a temperature sufficient to form a melt of metal-rich material in each of the depressions on the surface of the body; e. establishing a temperature gradient along substantially the vertical axis of the body and the first axis of the crystal structure; f. migrating the metal-rich melt through the body along the first axis of the crystal structure to divide the body into a plurality of regions of first type conductivity and to form at least one array of regions of recrystallized material of the body having solid solubility of the vapor deposited metal therein, the metal including at least one dopant impurity material therein to impart a second and opposite type conductivity and a selected level of resistivity thereto; g. providing a means for disposing a source of radioactive material within the body in a predetermined relationship with the material of the body and the material of regions of the at least one array; g. electrically connecting the plurality of first type regions into a first internal electrical circuit arrangement, and i. electrically connecting the plurality of second type regions into a second internal electrical circuit arrangement.
Claim 2
Dependent Claim
323 words
A process for making a deep diode atomic battery comprising the steps of: a. selecting a body of single crystal semiconductor material so that the body has a first type conductivity, a selected resistivity, and at least one major surface having a preferred planar crystal structure orientation which is one selected from the group consisting of (100), (110) and (111), the vertical axis of the body being substantially aligned with a first axis of the crystal structure; b. etching selectively the surface having the preferred planar crystal structure orientation to form at least one array of depressions in the surface; c. vapor depositing a layer of a metal in the depressions of the at least one array on the selected surface of the body of semiconductor material; d. heating the body and the metal to a temperature sufficient to form a melt of metal-rich material in each of the depressions on the surface of the body; e. establishing a temperature gradient along substantially the vertical axis of the body and the first axis of the crystal structure; f. migrating the metal-rich melt through the body along the first axis of the crystal structure to divide the body into a plurality of regions of first type conductivity and to form at least one array of regions of recrystallized material of the body having solid solubility of the vapor deposited metal therein, the metal including at least one dopant impurity material therein to impart a second and opposite type conductivity and a selected level of resistivity thereto; g. providing a means for disposing a source of radioactive material within the body in a predetermined relationship with the material of the body and the material of regions of the at least one array; g. electrically connecting the plurality of first type regions into a first internal electrical circuit arrangement, and i. electrically connecting the plurality of second type regions into a second internal electrical circuit arrangement.
Claim 3
Dependent Claim
27 words
The method of claim 1 wherein the semiconductor material of the body is one selected from the group consisting of silicon, silicon carbide, gallium arsenide and germanium.
Claim 4
Dependent Claim
23 words
The process of claim 1 wherein the semiconductor material of the body is N-type gallium arsenide, and the metal is gallium containing zinc.
Claim 5
Dependent Claim
48 words
The process of claim 2 wherein the semiconductor material of the body is N-type gallium arsenide doped with silicon, the metal is gallium, and including selecting the migration rate and migration temperture selected so as to provide recrystallized material comprising the second regions which is P-type gallium arsenide.
Claim 6
Dependent Claim
22 words
The process of claim 2 wherein the preferred planar crystal orientation is (100), and the first crystal axis is < 110 >.
Claim 7
Dependent Claim
18 words
The process of claim 5 wherein the semiconductor material is silicon, and the dopant impurity material is aluminum.
Claim 8
Dependent Claim
22 words
The process of claim 2 wherein the preferred planar crystal orientation is (100), and the first crystal axis is < 100 >.
Claim 9
Dependent Claim
18 words
The process of claim 7 wherein the semiconductor material is silicon, and the dopant impurity material is aluminum.
Claim 10
Dependent Claim
31 words
The process of claim 1 wherein the surface which is selectively etched has a preferred planar crystal orientation which is one selected from the group consisting of (111), (100) and (100).
Claim 11
Dependent Claim
21 words
The process of claim 9 wherein the preferred planar crystal orientation is (111), and the first crystal axis < 111 >.
Claim 12
Dependent Claim
22 words
The process of claim 10 wherein the semiconductor material of the body is silicon of N-type conductivity, and the dopant impurity aluminum.
Claim 13
Dependent Claim
92 words
The process of claim 9 wherein providing a means for disposing a source of radioactive material within each atomic battery includes providing at least one cavity within a predetermined portion of the first region, the cavity being defined by walls extending into the body a predetermined distance from one of the major opposed surfaces, the walls being substantially perpendicular to that major surface, and disposing a radioactive source within each cavity, the radioactive source being one selected from the group consisting of a gamma emitter, a beta emitter and an x-ray emitter.
Claim 14
Dependent Claim
22 words
The process of claim 12 wherein each cavity is defined by walls extending between, and terminating in, the two major opposed surfaces.
Claim 15
Dependent Claim
21 words
The process of claim 13 wherein the semiconductor material is silicon of N-type conductivity, and the dopant impurity material is aluminum.
Claim 16
Dependent Claim
21 words
The process of claim 12 wherein the semiconductor material is silicon of N-type conductivity, and the dopant impurity material is aluminum.
Claim 17
Dependent Claim
92 words
The process of claim 15 wherein providing a means for disposing a source of radioactive material within each atomic battery includes providing at least one cavity within a predetermined portion of the first region, the cavity being defined by walls extending into the body a predetermined distance from one of the major opposed surfaces, the walls being substantially perpendicular to that major surface, and disposing a radioactive source within each cavity, the radioactive source being one selected from the group consisting of a gamma emitter, a beta emiter and an x-ray emitter.
Claim 18
Dependent Claim
22 words
The process of claim 16 wherein each cavity is defined by walls extending between, and terminating in, the two major opposed surfaces.
Claim 19
Dependent Claim
20 words
The process of claim 17 wherein the semiconductor material is silicon of N-type conductivity, and the dopant material is aluminum.
Claim 20
Dependent Claim
213 words
The process of claim 9 including providing at least one planar electrical isolation region in the body to divide the body into at least two separate regions electrically isolated from each other and including an atomic battery in at least one of the electrically isolated regions, forming each planar electrical isolation region in situ by the migration of a wire-like melt of a metalrich semiconductor material of the body, which is oriented substantially parallel with a second preferred crystal axis of the material of the body, by thermal gradient zone melting processing at a predetermined elevated temperature along a thermal gradient substantially parallel with the vertical axis of the body and the first axis of the crystal structure of the material of the body thereby producing recrystallized semiconductor material of the body having a predetermined level of concentration of the metal of the melt therein as determined by the solid solubility limit of that metal in that semiconductor material at that predetermined elevated temperature of migration and the metal is distributed substantially uniformly throughout the entire region, the metal comprising at least one dopant impurity material to impart a predetermined type conductivity opposite to that type conductivity of the body and a predetermined level of resistivity to the recrystallized material of the region.
Claim 21
Dependent Claim
21 words
The process of claim 19 wherein the semiconductor material is silicon of N-type conductivity, and the dopant impurity material is aluminum.
Claim 22
Dependent Claim
73 words
The process of claim 19 wherein an atomic battery is formed in at least one of the electrically isolated regions of material of the body, at least one semiconductor device fabricated in another one of the electrically isolated regions of material of the body, and electrical means connecting the at least one semiconductor device to the at least one atomic battery for providing electrical power to the device for functioning of the same.
Claim 23
Dependent Claim
84 words
The process of claim 9 wherein providing a means for disposing a source of radioactive material within each atomic battery includes migrating a layer of vapor deposited material, which includes a gamma emitter material, by temperature gradient zone melting processing through the material of the body from the surface of preferred crystal planar orientation. to a depth less than the thickness of the body and solidifying the melt within the body at that predetermined depth to provide the radioactive source material for the battery.
Claim 24
Dependent Claim
32 words
The process of claim 22 wherein the material of each gamma ray emitter is one selected from the group consisting of Barium 133, Cadmium 109, Calcium 45, Cerium 139 and Chromium 51.
Claim 25
Dependent Claim
32 words
The process of claim 22 wherein the material of each gamma ray emitter is one selected from the group consisting of Cobalt 57, Dyaprosium 159, Gold 195, Iodine 125 and Iodine 129.
Claim 26
Dependent Claim
32 words
The process of claim 22 wherein the material of each gamma ray emitter is one selected from the group consisting of Iron 55, Mercury 197, Mercury 203, Nickel 59 and Promethium 147.
Claim 27
Dependent Claim
32 words
The process of claim 22 wherein the material of each gamma ray emitter is one selected from the group consisting of Selenium 75, Thulium 171, Tin 119, Tungsten 181 and Ytterbrium 169.
Claim 28
Dependent Claim
80 words
The process of claim 9 wherein each region of recrystallized material is a planar region, each region is formed by the migration of a wire-like melt, which is oriented substantially parallel with a second preferred crystal axis of the material of the body, through the body by thermal gradient zone melting to form a lamellar structure of regions of alternate and opposite type conductivity and a P-N junction therebetween at the contiguous surfaces of the material of opposite type conductivity.
Claim 29
Dependent Claim
41 words
The process of claim 27 wherein the preferred crystal planar orientation is (100), the first crystal axis is < 100 >, and the second crystal axis is one selected from the group consisting of < 011 > and < 011 >.
Claim 30
Dependent Claim
21 words
The process of claim 28 wherein the semiconductor material is silicon of N-type conductivity, and the dopant impurity material in aluminum.
Claim 31
Dependent Claim
46 words
The process of claim 29 wherein the metal migrated through the body includes a radioactive material which functions as an emitter of rays which is one selected from the group consisting of gamma rays and x-rays to function as the radioactive source in the atomic battery.
Claim 32
Dependent Claim
32 words
The process of claim 27 wherein the preferred crystal planar orientation is (110), the first preferred crystal axis is < 110 >, and the second preferred crystal axis is < 110 >.
Claim 33
Dependent Claim
18 words
The process of claim 31 wherein the semiconductor material is silicon, and the dopant impurity material is aluminum.
Claim 34
Dependent Claim
46 words
The process of claim 32 wherein the metal migrated through the body includes a radioactive material which functions as an emitter of rays which is one selected from the group consisting of gamma rays and x-rays to function as the radioactive source in the atomic battery.
Claim 35
Dependent Claim
22 words
The process of claim 27 wherein the preferred crystal planar orientation is (111), and the first preferred crystal axis < 111 >.
Claim 36
Dependent Claim
38 words
The process of claim 34 wherein the second preferred crystal axis is one selected from the group consisting of < 011 >, < 101 >, < 110 >, < 112 >, < 211 > and < 121 >.
Claim 37
Dependent Claim
18 words
The process of claim 35 wherein the semiconductor material is silicon, and the dopant impurity material is aluminum.
Claim 38
Dependent Claim
46 words
The process of claim 35 wherein the metal migrated through the body includes a radioactive material which functions as an emitter of rays which is on selected from the group consisting of gamma rays and x-rays to function as the radioactive source in the atomic battery.
Claim 39
Dependent Claim
46 words
The process of claim 27 wherein the metal migrated through the body includes a radioactive material which functions as an emitter of rays which is one selected from the group consisting of gamma rays and x-rays to function as the radioactive source in the atomic battery.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-03-07 | 1980-09-06 | 1981-03-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-03-07 | 1984-09-06 | 1985-03-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-03-07 | 1988-09-06 | 1989-03-08 | $7700.00 | Window Closed / Lapsed |