US4010482A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Non-volatile schottky barrier diode memory cell
Assignee: International Business Machines Corp
•
Filing: 1975-12-31
•
Granted: 1977-03-01
•
Expires: 1995-12-31
Abstract
Abstract A non-volatile memory cell that includes a Schottky barrier diode, located over a sub-diffused line or region formed within the substrate, acting as the control element. Information is stored in the device by introducing electrons into a nitride-oxide interface located at the perimeter of the Schottky barrier junction. Thus, the injected electrons are subject to trapping in the nitride-oxide layer, causing depletion in the epi region adjoining the diode interface, thereby influencing the current carrying state of the device.
Inventors
- 👤 Shakir Ahmed Abbas
- 👤 Narasipur Gundappa Anantha
- 👤 Robert Charles Dockerty
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 00:04
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/36; G11C16/00; G11C16/02; G11C16/04; G11C16/0466; H; H10; H10B; H10B99/00; H10B99/16; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D8/00; H10D8/60; H10D8/812; H10D84/00; H10D84/80; H10D84/811
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
114 words
A non-volatile memory element comprising a substrate of one conductivity type, a region of opposite conductivity type provided within said substrate having a first electrode in ohmic contact therewith, an epi layer of said first conductivity type formed upon said substrate, a second electrode in contact with said epi layer through a Schottky barrier, a thin layer of insulating material upon said epi layer adjacent to said Schottky barrier, said layer including electron trapping centers and trapped electrons therein when a bias exceeding a critical value is applied across said Schottky barrier, and a layer of conductive material deposited on said layer of insulating material and having a third electrode in ohmic contact therewith.
Claim 2
Dependent Claim
114 words
A non-volatile memory element comprising a substrate of one conductivity type, a region of opposite conductivity type provided within said substrate having a first electrode in ohmic contact therewith, an epi layer of said first conductivity type formed upon said substrate, a second electrode in contact with said epi layer through a Schottky barrier, a thin layer of insulating material upon said epi layer adjacent to said Schottky barrier, said layer including electron trapping centers and trapped electrons therein when a bias exceeding a critical value is applied across said Schottky barrier, and a layer of conductive material deposited on said layer of insulating material and having a third electrode in ohmic contact therewith.
Claim 3
Dependent Claim
25 words
The memory element of claim 1 wherein said substrate is formed of N type material and said region of opposite conductivity type is P+ material.
Claim 4
Dependent Claim
20 words
The memory element of claim 2 wherein said thin layer of insulating material is silicon dioxide covered by silicon nitride.
Claim 5
Dependent Claim
14 words
The memory element of claim 3 wherein said second electrode is comprised of aluminum.
Claim 6
Dependent Claim
21 words
The memory element of claim 3 wherein polysilicon comprises said layer of conductive material deposited on said layer of insulating material.
References Cited (Backward Citations)
US3796928A
Cited
US3836992A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-02-29 | 1980-08-30 | 1981-03-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-02-29 | 1984-08-30 | 1985-03-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-02-29 | 1988-08-30 | 1989-03-01 | $7700.00 | Window Closed / Lapsed |