Patent US4007978A successfully refreshed from Google Patents.
US4007978A
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Integrated optical circuits
Assignee: Texas Instruments Inc
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Filing: 1975-05-09
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Granted: 1977-02-15
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Expires: 1995-05-09
Abstract
Abstract An integrated optical circuit transmitter fabricated on a single semiconductor substrate, which includes a source of optical pulses of variable wavelengths at a predetermined repetition rate. This source may take the form of a surface laser of III-V semiconductor compound material or a mixed ternary III-V semiconductor composition which includes a portion of the substrate and a semiconductor mesa of III-V semiconductor compound material or mixed ternary III-V semiconductor composition mounted on the substrate and having an active surface laser region along the top thereof in which laser radiation is generated in response to the admission of laser radiation through the substrate and the mesa in a direction extending thereto. An optical waveguide is disposed in juxtaposition to the active surface laser region and is coupled thereto to form an evanescent field-coupling therebetween matching the phase velocity of the laser radiation generated in the active surface laser region to that of the optical waveguide for transmitting laser radiation to the optical waveguide. In a more specific aspect, an integrated optical circuit transmitter is disclosed utilizing a laser source to obtain optical pulses of variable wavelengths at a predetermined repetition rate, an optical waveguide transmission path configuration including branch waveguide transmission paths, an optical modulator mounted on the primary waveguide transmission path to impart pulse code modulation to the optical pulse train as provided by the laser source, wherein the optical pulse train in the primary waveguide transmission path may be directed into one or the other of branch waveguide transmission paths in response to activation of the optical modulator, and an acousto-optic switch to enable transfer of the optical pulses from one branch waveguide transmission path to another separate optical waveguide portion upon activation thereof.
Inventors
- 👤 William C. Holton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 10:27
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; G; G02; G02B; G02B6/00; G02B6/24; G02B6/26; G02B6/30; G02B6/42; H01S5/02; H01S5/026; H01S5/30; H01S5/04; H01S5/041
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
185 words
In an integrated optics structure, a source of laser radiation, a surface laser operably associated with said source of laser radiation for receiving laser radiation therefrom, said surface laser comprising: a substrate of semiconductor material taken from the group consisting of III-V semiconductor compounds and mixed ternary III-V semiconductor compositions, a mesa of semiconductor material taken from the group consisting of III-V semiconductor compounds and mixed ternary III-V semiconductor compositions mounted on said substrate, and means defining an active surface laser region extending along the top of said mesa and in which laser radiation is generated in response to activation of said source of laser radiation causing the emission of laser radiation through said substrate and said mesa in a direction extending thereto; optical waveguide means disposed in juxtaposition to said active surface laser region; and means coupling said active surface laser region to said optical waveguide means by forming an evanescent field-coupling therebetween matching the phase velocity of the laser radiation generated in said active surface laser region to that of said optical waveguide means for transmitting laser radiation to said optical waveguide means.
Claim 2
Dependent Claim
185 words
In an integrated optics structure, a source of laser radiation, a surface laser operably associated with said source of laser radiation for receiving laser radiation therefrom, said surface laser comprising: a substrate of semiconductor material taken from the group consisting of III-V semiconductor compounds and mixed ternary III-V semiconductor compositions, a mesa of semiconductor material taken from the group consisting of III-V semiconductor compounds and mixed ternary III-V semiconductor compositions mounted on said substrate, and means defining an active surface laser region extending along the top of said mesa and in which laser radiation is generated in response to activation of said source of laser radiation causing the emission of laser radiation through said substrate and said mesa in a direction extending thereto; optical waveguide means disposed in juxtaposition to said active surface laser region; and means coupling said active surface laser region to said optical waveguide means by forming an evanescent field-coupling therebetween matching the phase velocity of the laser radiation generated in said active surface laser region to that of said optical waveguide means for transmitting laser radiation to said optical waveguide means.
Claim 3
Dependent Claim
69 words
A monolithic semiconductor structure comprising: semiconductor laser means in which laser radiation is generated, optical waveguide means disposed in juxtaposition to said semiconductor laser means, and means coupling said semiconductor laser means to said optical waveguide means by forming an evanescent field-coupling therebetween matching the phase velocity of the laser radiation generated in said semiconductor laser means to that of said optical waveguide means for transferring laser radiation therebetween.
Claim 4
Dependent Claim
69 words
A monolithic semiconductor structure comprising: semiconductor laser means in which laser radiation is generated, optical waveguide means disposed in juxtaposition to said semiconductor laser means, and means coupling said semiconductor laser means to said optical waveguide means by forming an evanescent field-coupling therebetween matching the phase velocity of the laser radiation generated in said semiconductor laser means to that of said optical waveguide means for transferring laser radiation therebetween.
Claim 5
Dependent Claim
201 words
An optical transmitter which comprises: a single semiconductor chip, said chip including a source of optical pulses of variable wavelengths at a predetermined repetition rate, optical waveguide transmission path means including a primary optical waveguide transmission path, a pair of branch optical waveguide transmissions paths respectively connected to one end of the primary optical waveguide transmission path and extending outwardly therefrom in spaced substantially parallel relation to each other, and a separate waveguide portion disposed along-side of one of said pair of branch optical waveguide transmission paths and including an intermediate waveguide portion in substantially parallel spaced relationship thereto. means on said chip astride the primary optical waveguide transmission path for pulse code modulating the optical pulse train formed by said source, an optical pulse train in said primary optical waveguide transmission path being directed into said one branch optical waveguide transmission path in response to activation of said pulse code modulating means, and acousto-optic switch means extending across the spaced parallel intermediate portions of said one branch path and said separate waveguide portion, said optical pulses being switched from said one branch optical waveguide transmission path to said separate waveguide portion in response to activation of said acousto-optic switch means.
Claim 6
Dependent Claim
201 words
An optical transmitter which comprises: a single semiconductor chip, said chip including a source of optical pulses of variable wavelengths at a predetermined repetition rate, optical waveguide transmission path means including a primary optical waveguide transmission path, a pair of branch optical waveguide transmissions paths respectively connected to one end of the primary optical waveguide transmission path and extending outwardly therefrom in spaced substantially parallel relation to each other, and a separate waveguide portion disposed along-side of one of said pair of branch optical waveguide transmission paths and including an intermediate waveguide portion in substantially parallel spaced relationship thereto. means on said chip astride the primary optical waveguide transmission path for pulse code modulating the optical pulse train formed by said source, an optical pulse train in said primary optical waveguide transmission path being directed into said one branch optical waveguide transmission path in response to activation of said pulse code modulating means, and acousto-optic switch means extending across the spaced parallel intermediate portions of said one branch path and said separate waveguide portion, said optical pulses being switched from said one branch optical waveguide transmission path to said separate waveguide portion in response to activation of said acousto-optic switch means.
Claim 7
Dependent Claim
168 words
A monolithic semiconductor structure comprising: a surface laser adapted to receive laser radiation from a suitable source; said surface laser including a substrate of semiconductor material taken from the group consisting of III-V semiconductor compounds and mixed ternary III-V semiconductor compositions, a mesa of semiconductor material taken from the group consisting of III-V semiconductor compounds and mixed ternary III-V semiconductor compositions mounted on said substrate, and means defining an active surface laser region extending along the top of said mesa and in which laser radiation is generated in response to the emission of laser radiation through said substrate and said mesa in a direction extending thereto; optical waveguide means disposed in juxtaposition to said active surface laser region; and means coupling said active surface laser region to said optical waveguide means by forming an evanescent field-coupling therebetween matching the phase velocity of the laser radiation generated in said active surface laser region to that of said optical waveguide means for transmitting laser radiation to said optical waveguide means.
Claim 8
Dependent Claim
168 words
A monolithic semiconductor structure comprising: a surface laser adapted to receive laser radiation from a suitable source; said surface laser including a substrate of semiconductor material taken from the group consisting of III-V semiconductor compounds and mixed ternary III-V semiconductor compositions, a mesa of semiconductor material taken from the group consisting of III-V semiconductor compounds and mixed ternary III-V semiconductor compositions mounted on said substrate, and means defining an active surface laser region extending along the top of said mesa and in which laser radiation is generated in response to the emission of laser radiation through said substrate and said mesa in a direction extending thereto; optical waveguide means disposed in juxtaposition to said active surface laser region; and means coupling said active surface laser region to said optical waveguide means by forming an evanescent field-coupling therebetween matching the phase velocity of the laser radiation generated in said active surface laser region to that of said optical waveguide means for transmitting laser radiation to said optical waveguide means.
Claim 9
Dependent Claim
46 words
A monolithic semiconductor structure as set forth in claim 4, wherein said coupling means between said active surface laser region and said optical waveguide means comprises a grating structure formed in the surface of said active surface laser region in juxtaposition to said optical waveguide means.
Claim 10
Dependent Claim
45 words
A monolithic semiconductor structure as set forth in claim 4, wherein said mesa is a heteroepitaxial structure having faceted planar side surfaces perpendicular to the surface of said substrate on which said mesa is mounted and being arranged in two pairs of parallel side surfaces.
Claim 11
Dependent Claim
81 words
A monolithic semiconductor structure as set forth in claim 4, wherein said active surface laser region comprises a layer of a mixed ternary III-V semiconductor composition disposed on the top of said mesa and extending thereacross, and said coupling means comprises a grating structure including a plurality of grooves formed in the top surface of said active surface laser layer, and said active surface laser layer being joined to said optical waveguide means with said grating structure in optical contact therewith.
Claim 12
Dependent Claim
23 words
A monolithic semiconductor structure as set forth in claim 7, wherein said active surface laser layer is bonded to said optical waveguide means.
References Cited (Backward Citations)
US3589794A
Cited
US3716804A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1980-02-15 | 1980-08-16 | 1981-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-02-15 | 1984-08-16 | 1985-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-02-15 | 1988-08-16 | 1989-02-15 | $7700.00 | Window Closed / Lapsed |