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US4005465A
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Tunnel emitter photocathode
Assignee: United States Department of the Army
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Filing: 1975-05-30
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Granted: 1977-01-25
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Expires: 1995-05-30
Abstract
Abstract A method of producing a tunnel emitter photocathode consisting of heating aemiconductor layer and then depositing a layer of aluminum oxide on one side thereof at a rapid rate and then baking out the wafer in a hydrogen gas atmosphere. After depositing electrical contacts on each side of the wafer, a metallic emitter layer is evaporated over the aluminum oxide layer with the metallic emitter layer treated with a low work function material such as cesium and oxygen to further increase the emission efficiency.
Inventors
- 👤 Brian S. Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:43
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/34; B; B82; B82Y; B82Y10/00; H01J1/30; H01J1/312; H01J2201/00; H01J2201/34; H01J2201/342; H01J2201/3421; H01J2201/3423
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
127 words
A tunnel emitter photocathode comprising: a layer of semiconductor material that converts light to photoelectrons, said semiconductor material having an electrical contact attached thereto; an amorphous aluminum oxide insulating layer contiguous with one side of said layer of semiconductor material; a constant thickness metallic emitter layer contiguous with said insulating layer and having an electrical contact attached thereto; a thin layer of low work function material contiguous with said metallic emitter layer; and a bias voltage source connected to electrical contacts attached to said semiconductor material and said metallic emitter layer wherein said bias voltage source produces an electric field across said insulating layer to tunnel electrons through said insulating layer and into said metallic emitter layer and out said thin layer of low work function material.
Claim 2
Dependent Claim
127 words
A tunnel emitter photocathode comprising: a layer of semiconductor material that converts light to photoelectrons, said semiconductor material having an electrical contact attached thereto; an amorphous aluminum oxide insulating layer contiguous with one side of said layer of semiconductor material; a constant thickness metallic emitter layer contiguous with said insulating layer and having an electrical contact attached thereto; a thin layer of low work function material contiguous with said metallic emitter layer; and a bias voltage source connected to electrical contacts attached to said semiconductor material and said metallic emitter layer wherein said bias voltage source produces an electric field across said insulating layer to tunnel electrons through said insulating layer and into said metallic emitter layer and out said thin layer of low work function material.
Claim 3
Dependent Claim
16 words
A tunnel emitter photocathode as set forth in claim 1 wherein said semiconductor material is silicon.
Claim 4
Dependent Claim
25 words
A tunnel emitter photocathode as set forth in claim 2 wherein said amorphous aluminum oxide insulating layer is 500 A to 1,000 A in thickness.
Claim 5
Dependent Claim
28 words
A tunnel emitter photocathode as set forth in claim 3 wherein said constant thickness metallic emitter layer is semitransparent silver of between 100 A to 400 A thickness.
Claim 6
Dependent Claim
22 words
A tunnel emitter photocathode as set forth in claim 4 wherein said thin layer of low work function material is cesium oxide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-01-25 | 1980-07-26 | 1981-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-01-25 | 1984-07-26 | 1985-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-01-25 | 1988-07-26 | 1989-01-25 | $7700.00 | Window Closed / Lapsed |