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US4005327A Expired / Lapsed US ⏱️ 0.0 years remaining

Low beam velocity retina for Schottky infrared vidicons

Assignee: United States Department of the Air Force
•
Filing: 1975-10-28
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Granted: 1977-01-25
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Expires: 1995-10-28
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Abstract

Abstract A solid state sensing retina for infrared vidicon television camera tubes using a low voltage electron beam, consisting of a monolithic silicon wafer having an n-type substrate and two dimensional array of p-type islands, each island has a Schottky electrode photoemitter and substrate contact buss, an ohmic contact pad allows charging of the p-type region beneath the Schottky electrode.

Inventors

  • 👤 Sven A. Roosild
  • 👤 Freeman D. Shepherd, Jr.
  • 👤 Andrew C. Yang

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 11:23
CPC Classifications
H; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J29/453; H01J29/455

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 159 words
A solid state retina sensing layer for infrared vidicon tubes comprising a base having one conductivity type; a plurality of cells of a second conductivity type, arranged in a two dimensional array and forming junctions with said base, a contact formed near the surface of said cell; infrared photo-emitter means affixed to at least one surface of each cell; a plurality of contact means in said base located between said cells; buss means for connecting the photoemitter means with the base contact means; a dielectric coating covering the surface of the base receiving the electron beam, a metal electrode for each cell positioned on the surface of said dielectric coating and extending through the coating to the contact of said cell whereby electrons reaching the electrode will place a charge on the cell, and a resistance means connecting the base to ground potential where the amount of charge lost by the cell due to infrared radiation may be measured.
Claim 2
Dependent Claim 159 words
A solid state retina sensing layer for infrared vidicon tubes comprising a base having one conductivity type; a plurality of cells of a second conductivity type, arranged in a two dimensional array and forming junctions with said base, a contact formed near the surface of said cell; infrared photo-emitter means affixed to at least one surface of each cell; a plurality of contact means in said base located between said cells; buss means for connecting the photoemitter means with the base contact means; a dielectric coating covering the surface of the base receiving the electron beam, a metal electrode for each cell positioned on the surface of said dielectric coating and extending through the coating to the contact of said cell whereby electrons reaching the electrode will place a charge on the cell, and a resistance means connecting the base to ground potential where the amount of charge lost by the cell due to infrared radiation may be measured.
Claim 3
Dependent Claim 22 words
A solid state retina sensing layer for infrared vidicon tubes according to claim 1 wherein said base comprises a monolithic silicon wafer.
Claim 4
Dependent Claim 24 words
A solid state retina sensing layer for infrared vidicon tubes according to claim 2 wherein said monolithic silicon wafer base includes an n-type substrate.
Claim 5
Dependent Claim 28 words
A solid state retina sensing layer for infrared vidicon tubes according to claim 1 wherein each of said cells comprising a p-type silicon island formed in the base.
Claim 6
Dependent Claim 22 words
A solid state retina sensing layer for infrared vidicon tubes according to claim 1 wherein said infrared photoemitter is a Schottky electrode.
Claim 7
Dependent Claim 21 words
A solid state retina sensing layer for infrared vidicon tubes according to claim 1 wherein said dielectric coating is silicon dioxide.

References Cited (Backward Citations)

US3676715A Cited
US3703669A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1980-01-25 1980-07-26 1981-01-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1984-01-25 1984-07-26 1985-01-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1988-01-25 1988-07-26 1989-01-25 $7700.00 Window Closed / Lapsed

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