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US4004953A
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Method for growing crystals of III-V compound semiconductors
Assignee: Mitsubishi Electric Corp
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Filing: 1975-09-23
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Granted: 1977-01-25
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Expires: 1995-09-23
Abstract
Abstract This invention relates to a method for growing semi-insulating III-V compound semiconductor crystals on a substrate by means of an epitaxially crystallizing process in the liquid state, which comprises the steps of: A. placing a saturated solution of a III-V compound in a reaction tube, B. carrying out a heating of the solution in the atmosphere of H 2 gas, and C. growing a crystal of the III-V compound on the substrate in the liquid phase at a temperature below the melting point of the III-V compound while keeping the vapor pressure of the V Group element under a predetermined value in the reaction tube.
Inventors
- 👤 Mutsuyuki Otsubo
- 👤 Hidejiro Miki
- 👤 Kiyoshi Shirahata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:18
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B19/00; C30B19/02; C30B19/04; Y; Y10; Y10S; Y10S117/00; Y10S117/906
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
183 words
A method for growing semi-insulating Group III-V compound semiconductor crystals having a residual free electron concentration of 10 13 cm - 3 or less, on a substrate by means of an epitaxially crystallizing process in a liquid state, which comprises the steps of: a. placing a boat containing a saturated solution of a III-V compound having chromium added therein in an inclined reaction tube; b. heating the solution at a temperature of 800° - 950° C in an atmosphere of hydrogen; c. cooling the reaction tube to room temperature and placing a substrate in said boat without permitting the substrate to come into contact with the solution, while another boat having a V Group element vapor-generating solution thereon is inserted in said reaction tube; d. heating the reaction tube at a temperature of 700° to 900° C, and bringing the saturated solution of III-V compound into contact with the substrate by reversing the inclination of the reaction tube; and e. slowly cooling the system to grow a crystal of the III-V compound on the substrate at a temperature of 700° - 830° C.
Claim 2
Independent Claim
183 words
A method for growing semi-insulating Group III-V compound semiconductor crystals having a residual free electron concentration of 10 13 cm - 3 or less, on a substrate by means of an epitaxially crystallizing process in a liquid state, which comprises the steps of: a. placing a boat containing a saturated solution of a III-V compound having chromium added therein in an inclined reaction tube; b. heating the solution at a temperature of 800° - 950° C in an atmosphere of hydrogen; c. cooling the reaction tube to room temperature and placing a substrate in said boat without permitting the substrate to come into contact with the solution, while another boat having a V Group element vapor-generating solution thereon is inserted in said reaction tube; d. heating the reaction tube at a temperature of 700° to 900° C, and bringing the saturated solution of III-V compound into contact with the substrate by reversing the inclination of the reaction tube; and e. slowly cooling the system to grow a crystal of the III-V compound on the substrate at a temperature of 700° - 830° C.
Claim 3
Dependent Claim
46 words
The method for growing semi-insulating III-V compound semiconductor crystals according to claim 1, whereby in step (a) tin is added to the saturated solution of III-V compound and in step (e) a crystal of III-V compound is grown at a temperature of 830° - 900° C.
Claim 4
Dependent Claim
32 words
The method for growing semi-insulating III-V compound semiconductor crystals according to claim 2, wherein the III-V compound is selected from the group consisting of gallium arsenide, gallium phosphide, indium phosphide and gallium-aluminum-arsenide.
Claim 5
Dependent Claim
53 words
The method for growing semi-insulating III-V compound semiconductor crystals according to claim 2, wherein step (a) gallium solution saturated with gallium arsenide having chromium and tin added therein is used as the saturated solution of III-V compound, and in step (c) gallium solution-containing arsenide is used as the V group element vapor-generating solution.
Claim 6
Dependent Claim
32 words
The method for growing semi-insulating III-V compound semiconductor crystals according to claim 1, wherein the III-V compound is selected from the group consisting of gallium arsenide, gallium phosphide, indium phosphide, and gallium-aluminum-arsenide.
Claim 7
Dependent Claim
52 words
The method for growing semi-insulating III-V compound semiconductor crystals according to claim 1, wherein step (a) gallium solution saturated with gallium arsenide having chromium added therein is used as the saturated solution of III-V compound, and in step (c) gallium solution containing arsenide is used as the V group element vapor-generating solution.
References Cited (Backward Citations)
US3344071A
Cited
US3713900A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-01-25 | 1980-07-26 | 1981-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-01-25 | 1984-07-26 | 1985-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-01-25 | 1988-07-26 | 1989-01-25 | $7700.00 | Window Closed / Lapsed |