US3999282A
Expired / Lapsed
US
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Method for manufacturing semiconductor devices having oxide films and the semiconductor devices manufactured thereby
Assignee: Hitachi Ltd
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Filing: 1970-09-14
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Granted: 1976-12-28
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Expires: 1990-09-14
Abstract
Abstract A silicon crystal body having a major surface lying parallel to a {110} or {100} crystal plane is prepared. A silicon oxide film is formed on the major surface by heating the body in an atmosphere containing steam. Then, an aluminum layer is formed on the oxide film. Thereby the amount of surface donors induced in the major surface of the body by the existence of the oxide film is smaller than the amount of induced surface donors to be obtained in a crystal plane of a like silicon body but lying parallel to a {111} plane covered with a like oxide film. The amount of induced surface donors is further reduced by subjecting said body to a heat treatment under application across said oxide film of such a voltage as that which renders the aluminum layer provided on the oxide film negative polarity. This invention is applied to the manufacture of, for example, MOS field effect transistors, MOS diodes and so-called planar transistors.
Inventors
- 👤 Minoru Ono
- 👤 Toshimitsu Momoi
- 👤 Youji Kawachi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:55
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D62/405; H10D99/00; H10P; H10P95/00; H10P95/80; Y; Y10; Y10S; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
113 words
A method for manufacturing a semiconductor device comprising the steps of producing a silicon crystalline body having a substantially plane major surface lying substantially parallel to a {100} crystal plane; producing an oxide film covering the major surface of the body; providing a conductive layer covering said oxide film; and subjecting the combination thus obtained to a heat treatment at a temperature of not less than 75° C for a time sufficient to decrease the density of surface donors induced in the major surface of the body to a desired value not more than 3.5 × 10 11 electrons/cm 2 while applying a voltage to said conductive layer with respect to said body.
Claim 2
Independent Claim
113 words
A method for manufacturing a semiconductor device comprising the steps of producing a silicon crystalline body having a substantially plane major surface lying substantially parallel to a {100} crystal plane; producing an oxide film covering the major surface of the body; providing a conductive layer covering said oxide film; and subjecting the combination thus obtained to a heat treatment at a temperature of not less than 75° C for a time sufficient to decrease the density of surface donors induced in the major surface of the body to a desired value not more than 3.5 × 10 11 electrons/cm 2 while applying a voltage to said conductive layer with respect to said body.
Claim 3
Independent Claim
114 words
A method for manufacturing a semiconductor device comprising the steps of producing a silicon crystalline body having a substantially plane major surface lying substantially parallel to a {110} crystal plane; heat-treating the body so as to produce a film consisting essentially of silicon oxide; providing electrical contacts to the device; and subjecting the combination thus obtained to a heat treatment at a temperature of not less than 75° for a time sufficient to decrease the surface density of surface donors induced in the major surface of the body to a desired value not more than 5 × 10 11 electrons/cm 2 while applying a voltage to said conductive layer with respect to said body.
Claim 4
Independent Claim
114 words
A method for manufacturing a semiconductor device comprising the steps of producing a silicon crystalline body having a substantially plane major surface lying substantially parallel to a {110} crystal plane; heat-treating the body so as to produce a film consisting essentially of silicon oxide; providing electrical contacts to the device; and subjecting the combination thus obtained to a heat treatment at a temperature of not less than 75° for a time sufficient to decrease the surface density of surface donors induced in the major surface of the body to a desired value not more than 5 × 10 11 electrons/cm 2 while applying a voltage to said conductive layer with respect to said body.
Claim 5
Independent Claim
125 words
A method for producing semiconductor devices which comprises forming an oxide film at least partly on the outer surface of a silicon semiconductor crystal, said outer surface having a crystal plane other than a {111} plane exposed, providing an electrode on said film, and subjecting the semiconductor crystal with said oxide film formed thereon to a heat treatment as a voltage is applied so that at least a portion of its potential is between said electrode on the oxide film and the semiconductor crystal, said heat treatment being carried out at a temperature of at least 75° C and for a time sufficient to decrease the surface donor density within the resulting channel layer formed in the semiconductor crystal surface immediately below the oxide film.
Claim 6
Independent Claim
125 words
A method for producing semiconductor devices which comprises forming an oxide film at least partly on the outer surface of a silicon semiconductor crystal, said outer surface having a crystal plane other than a {111} plane exposed, providing an electrode on said film, and subjecting the semiconductor crystal with said oxide film formed thereon to a heat treatment as a voltage is applied so that at least a portion of its potential is between said electrode on the oxide film and the semiconductor crystal, said heat treatment being carried out at a temperature of at least 75° C and for a time sufficient to decrease the surface donor density within the resulting channel layer formed in the semiconductor crystal surface immediately below the oxide film.
Claim 7
Independent Claim
92 words
A method for producing a semiconductor device comprising the steps of preparing a silicon semiconductive single crystalline substrate having a substantially plane surface lying parallel to a crystalline plane other than a {111} plane; forming an oxide film on said substantially plane surface; providing an electrode on said film; and subjecting said substrate thus composed to a heat-treatment at a temperature of not less than 75° for a time sufficient to decrease the surface donor density to a desired value while applying a voltage to said electrode with respect to said substrate.
Claim 8
Independent Claim
92 words
A method for producing a semiconductor device comprising the steps of preparing a silicon semiconductive single crystalline substrate having a substantially plane surface lying parallel to a crystalline plane other than a {111} plane; forming an oxide film on said substantially plane surface; providing an electrode on said film; and subjecting said substrate thus composed to a heat-treatment at a temperature of not less than 75° for a time sufficient to decrease the surface donor density to a desired value while applying a voltage to said electrode with respect to said substrate.
Claim 9
Independent Claim
106 words
A method for manufacturing a semiconductor device comprising the steps of producing a silicon crystalline substrate having a substantially plane major surface lying parallel to a crystalline plane other than a {111} plane; producing an oxide film covering said major surface; providing an electrode covering said film; and subjecting the combination thus obtained to a heat-treatment at a temperature of not less than 75° for a time sufficient to decrease the surface density of surface donors induced in said major surface to a desired value not more than 5 × 10 11 electrons/cm 2 while applying a voltage to said electrode with respect to said substrate.
Claim 10
Independent Claim
106 words
A method for manufacturing a semiconductor device comprising the steps of producing a silicon crystalline substrate having a substantially plane major surface lying parallel to a crystalline plane other than a {111} plane; producing an oxide film covering said major surface; providing an electrode covering said film; and subjecting the combination thus obtained to a heat-treatment at a temperature of not less than 75° for a time sufficient to decrease the surface density of surface donors induced in said major surface to a desired value not more than 5 × 10 11 electrons/cm 2 while applying a voltage to said electrode with respect to said substrate.
Claim 11
Dependent Claim
44 words
The method according to claim 5, wherein said heat treatment is carried out for a time sufficient to decrease the surface density of surface donors induced in said major surface to a desired value not more than 3.5 × 10 11 electrons/cm 2 .
Claim 12
Independent Claim
86 words
A method for manufacturing an insulated gate type field effect transistor comprising the steps of producing a silicon crystalline body having a substantially plane major surface lying substantially parallel to a {100} crystal plane; oxidizing said body to form a silicon oxide film on said major surface of said body; forming a source and a drain region in said body through holes in said silicon oxide film; and providing a gate electrode to cover the major surface of said body between said source and drain regions.
Claim 13
Independent Claim
86 words
A method for manufacturing an insulated gate type field effect transistor comprising the steps of producing a silicon crystalline body having a substantially plane major surface lying substantially parallel to a {100} crystal plane; oxidizing said body to form a silicon oxide film on said major surface of said body; forming a source and a drain region in said body through holes in said silicon oxide film; and providing a gate electrode to cover the major surface of said body between said source and drain regions.
Claim 14
Independent Claim
90 words
A method for manufacturing a transistor comprising the steps of producing a silicon crystalline body having a substantially plane major surface lying substantially parallel to a {100} crystal plane; oxidizing said body to form a silicon oxide film on said major surface of said body; forming a base and an emitter region in said body to define PN junctions terminating said major surface under said silicon oxide film; and providing an emitter and a base electrode on said emitter and base regions through holes in said silicon oxide film, respectively.
Claim 15
Independent Claim
90 words
A method for manufacturing a transistor comprising the steps of producing a silicon crystalline body having a substantially plane major surface lying substantially parallel to a {100} crystal plane; oxidizing said body to form a silicon oxide film on said major surface of said body; forming a base and an emitter region in said body to define PN junctions terminating said major surface under said silicon oxide film; and providing an emitter and a base electrode on said emitter and base regions through holes in said silicon oxide film, respectively.
Claim 16
Independent Claim
86 words
A method for manufacturing an insulated gate type field effect transistor comprising the steps of producing a silicon crystalline body having a substantially plane major surface lying substantially parallel to a {110} crystal plane; oxidizing said body to form a silicon oxide film on said major surface of said body; forming a source and a drain region in said body through holes in said silicon oxide film; and providing a gate electrode to cover the major surface of said body between said source and drain regions.
Claim 17
Independent Claim
86 words
A method for manufacturing an insulated gate type field effect transistor comprising the steps of producing a silicon crystalline body having a substantially plane major surface lying substantially parallel to a {110} crystal plane; oxidizing said body to form a silicon oxide film on said major surface of said body; forming a source and a drain region in said body through holes in said silicon oxide film; and providing a gate electrode to cover the major surface of said body between said source and drain regions.
Claim 18
Independent Claim
90 words
A method for manufacturing a transistor comprising the steps of producing a silicon crystalline body having a substantially plane major surface lying substantially parallel to a {110} crystal plane; oxidizing said body to form a silicon oxide film on said major surface of said body; forming a base and an emitter region in said body to define PN junctions terminating said major surface under said silicon oxide film; and providing an emitter and a base electrode on said emitter and base regions through holes in said silicon oxide film, respectively.
Claim 19
Independent Claim
90 words
A method for manufacturing a transistor comprising the steps of producing a silicon crystalline body having a substantially plane major surface lying substantially parallel to a {110} crystal plane; oxidizing said body to form a silicon oxide film on said major surface of said body; forming a base and an emitter region in said body to define PN junctions terminating said major surface under said silicon oxide film; and providing an emitter and a base electrode on said emitter and base regions through holes in said silicon oxide film, respectively.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-12-28 | 1980-06-28 | 1980-12-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-12-28 | 1984-06-28 | 1984-12-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-12-28 | 1988-06-28 | 1988-12-28 | $7700.00 | Window Closed / Lapsed |