Patent US3985918A successfully refreshed from Google Patents.
US3985918A
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Method for manufacturing a target for an image pickup tube
Assignee: Panasonic Holdings Corp
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Filing: 1975-01-23
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Granted: 1976-10-12
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Expires: 1995-01-23
Abstract
Abstract A target for an image pickup tube having high sensitivity, low dark current and low amount of lag-image is manufactured by forming a hetero-junction by the evaporation process. A first layer of ZnSxSe1-x or ZnuCd1-uS (wherein 0 </= x </= 1 and 0 </= u </= 1) is deposited on a light transmitting substrate having a coefficient of linear expansion of 56 x 10<->7/ DEG C - 110 x 10<->7/ DEG C and a second layer of (ZnyCd1-yTe)z (In2Te3)1-z (wherein 0.1 </= y </= 0.9 and 0.7 </= z </= 1) is deposited on the first layer. The substrate is then heat treated in an inert gas atmosphere or under vacuum at a temperature of 350 DEG -650 DEG C, preferably 500 DEG -600 DEG C for a time period of 5-90 minutes, preferably 5-15 minutes. By effecting second heat treatment at a temperature lower than the first heat treatment temperature, preferably at a temperature of 150 DEG -400 DEG C for 20 minutes - 3 hours, the characteristics of the target are further improved.
Inventors
- 👤 Masakazu Fukai
- 👤 Shinji Fujiwara
- 👤 Hiroyuki Serizawa
- 👤 Osamaru Eguchi
- 👤 Yukimasa Kuramoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 18:51
CPC Classifications
H; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; Y; Y10; Y10S; Y10S148/00; Y10S148/064; Y10S148/072; Y10S148/169; Y10S257/00; Y10S257/917
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
154 words
A method for manufacturing a target for an image pickup tube comprising the steps of: depositing by evaporation a first layer consisting of ZnS x Se 1 - x or Zn u Cd 1 - u S, wherein 0 ≦ x ≦ 1 and 0 ≦ u ≦ 1, on a light transmitting substrate having a transparent conductive film thereon, the coeffficient of linear expansion of said light transmitting substrate being within the range 56 × 10 - 7 /° C to 110 × 10 - 7 /° C, depositing by evaporation a second layer consisting of (Zn y Cd 1 - y Te) z (In 2 Te 3 ) 1 - z, wherein 0.1 ≦ y ≦ 0.9 and 0.7 ≦ z ≦ 1 on said first layer, and heat treating said light transmitting substrate formed with said first and second layers in an inert gas atmosphere or under vacuum at 350°-650° C.
Claim 2
Independent Claim
154 words
A method for manufacturing a target for an image pickup tube comprising the steps of: depositing by evaporation a first layer consisting of ZnS x Se 1 - x or Zn u Cd 1 - u S, wherein 0 ≦ x ≦ 1 and 0 ≦ u ≦ 1, on a light transmitting substrate having a transparent conductive film thereon, the coeffficient of linear expansion of said light transmitting substrate being within the range 56 × 10 - 7 /° C to 110 × 10 - 7 /° C, depositing by evaporation a second layer consisting of (Zn y Cd 1 - y Te) z (In 2 Te 3 ) 1 - z, wherein 0.1 ≦ y ≦ 0.9 and 0.7 ≦ z ≦ 1 on said first layer, and heat treating said light transmitting substrate formed with said first and second layers in an inert gas atmosphere or under vacuum at 350°-650° C.
Claim 3
Dependent Claim
56 words
A method for manufacturing a target for an image pickup tube as defined in claim 1, wherein the heat treatment temperature for said light transmitting substrate in said inert gas atmosphere or under vacuum is selected within a range of 500°-600° C, and the heat treatment time period is selected within a range of 5-15 minutes.
Claim 4
Dependent Claim
38 words
A method for manufacturing a target for an image pickup tube as defined in claim 1, wherein the deposition of said second layer is carried out by heating a single evaporation source while heating said light transmitting substrate.
Claim 5
Dependent Claim
53 words
A method for manufacturing a target for an image pickup tube as defined in claim 3, wherein the deposition of said second layer is carried out by heating said evaporation source at a temperature between 700° and 900° C while heating said light transmitting substrate at a temperature between 100° and 250° C.
Claim 6
Independent Claim
163 words
A method for manufacturing a target for an image pickup tube comprising the steps of: depositing by evaporation a first layer consisting of ZnS x Se 1 - x or Zn u Cd 1 - u S, wherein 0 ≦ x ≦ 1 and 0 ≦ u ≦ 1, on a light transmitting substrate having a transparent conductive film thereon, depositing by evaporation a second layer consisting of (Zn y Cd 1 - y Te) z (In 2 Te 3 ) 1 - z, wherein 0.1 ≦ y ≦ 0.9 and 0.7 ≦ z ≦ 1, on said first layer, initially heat treating said light transmitting substrate formed with said first and second layers in an inert gas atmosphere or under vacuum at 350°-650° C, and secondly heat treating said light transmitting substrate at a temperature between 150° and 400° C which is lower than that of the initial heat treatment for a period within a range of 20 minutes to 3 hours.
Claim 7
Independent Claim
163 words
A method for manufacturing a target for an image pickup tube comprising the steps of: depositing by evaporation a first layer consisting of ZnS x Se 1 - x or Zn u Cd 1 - u S, wherein 0 ≦ x ≦ 1 and 0 ≦ u ≦ 1, on a light transmitting substrate having a transparent conductive film thereon, depositing by evaporation a second layer consisting of (Zn y Cd 1 - y Te) z (In 2 Te 3 ) 1 - z, wherein 0.1 ≦ y ≦ 0.9 and 0.7 ≦ z ≦ 1, on said first layer, initially heat treating said light transmitting substrate formed with said first and second layers in an inert gas atmosphere or under vacuum at 350°-650° C, and secondly heat treating said light transmitting substrate at a temperature between 150° and 400° C which is lower than that of the initial heat treatment for a period within a range of 20 minutes to 3 hours.
Claim 8
Dependent Claim
46 words
A method for manufacturing a target for an image pickup tube as defined in claim 5, wherein the coefficient of linear expansion of said light transmitting substrate is selected within a range of 56 × 10 - 7 /° C-110 × 10 - 7 /° C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-10-12 | 1980-04-12 | 1980-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-10-12 | 1984-04-12 | 1984-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-10-12 | 1988-04-12 | 1988-10-12 | $7700.00 | Window Closed / Lapsed |