Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
195 words
A process for forming an embedded interconnection metallurgy system on a substrate comprising: forming a first layer of an organic thermosetting polymerized resin material on the top surface of said substrate; forming a second overlying layer of a second organic polymerized resin material that is soluble in a solvent that does not appreciably affect the material of said first layer; forming a third thin layer resistant to reactive ion etching in O 2 on said second layer, depositing a resist layer over said third layer, exposing the resist to form an inverse pattern of the desired metallurgy pattern and developing the resist; removing the resultant exposed areas of said third layer; reactive ion etching the resultant exposed areas for a time sufficient to completely remove the exposed portions of said first and second layers; depositing over said third layer and exposed areas of said substrate a blanket conductive metal layer having a thickness approximately matching the thickness of said first layer; and exposing said substrate to a solvent that is selective to the material of said second layer for a time sufficient to remove said second layer and overlying portions of said conductive metal layer.
Claim 2
Dependent Claim
195 words
A process for forming an embedded interconnection metallurgy system on a substrate comprising: forming a first layer of an organic thermosetting polymerized resin material on the top surface of said substrate; forming a second overlying layer of a second organic polymerized resin material that is soluble in a solvent that does not appreciably affect the material of said first layer; forming a third thin layer resistant to reactive ion etching in O 2 on said second layer, depositing a resist layer over said third layer, exposing the resist to form an inverse pattern of the desired metallurgy pattern and developing the resist; removing the resultant exposed areas of said third layer; reactive ion etching the resultant exposed areas for a time sufficient to completely remove the exposed portions of said first and second layers; depositing over said third layer and exposed areas of said substrate a blanket conductive metal layer having a thickness approximately matching the thickness of said first layer; and exposing said substrate to a solvent that is selective to the material of said second layer for a time sufficient to remove said second layer and overlying portions of said conductive metal layer.
Claim 3
Dependent Claim
19 words
The process of claim 1 wherein multiple interconnection metallurgy levels are formed by repeating the sequence of process steps.
Claim 4
Dependent Claim
33 words
The process of claim 1 wherein the material of said first layer is a polyimide formed by reacting pyromellitic dianhydride with an aromatic diamine to yield a polyamic acid, and dehydrating said acid.
Claim 5
Dependent Claim
25 words
The process of claim 3 wherein the material of said second layer is polysulfone formed by reacting sulphur dioxide with aromatic or aliphatic vinyl compounds.
Claim 6
Dependent Claim
23 words
The process of claim 3 wherein said first layer is formed by spinning on said polyimide material and subsequently heating at elevated temperatures.
Claim 7
Dependent Claim
23 words
The process of claim 4 wherein said second layer is formed by spinning on said polysulfone material and subsequently heating at elevated temperatures.
Claim 8
Dependent Claim
18 words
The process of claim 4 wherein said third layer is a glass resin polymer comprised predominantly of polymethylsiloxane.
Claim 9
Dependent Claim
16 words
The process of claim 1 wherein said conductive metal layer is aluminum that is vapor deposited.
Claim 10
Dependent Claim
25 words
The process of claim 4 wherein said solvent is n-methyl pyrrolidone and said second layer and the overlying layers are removed in an ultra-sonic bath.
Claim 11
Dependent Claim
28 words
The process of claim 1 wherein said exposed areas of third layer are removed by reactively ion etching in an ambient that at least includes CF 4 .
Claim 12
Dependent Claim
28 words
The process of claim 1 wherein said reactive ion etching of said first and second layers is accomplished in an ambient that at least includes O 2 .
Claim 13
Dependent Claim
29 words
The process of claim 10 wherein said reactive ion etching ambient for removing areas of said third layer is a mixture of an inert gas and CF 4 .
Claim 14
Dependent Claim
29 words
The process of claim 11 wherein said reactive ion etching ambient for removing said first and second layers is a mixture of an inert gas and O 2 .
Claim 15
Dependent Claim
30 words
The process of claim 1 wherein said substrate is an integrated circuit semiconductor device having active and passive devices, and an overlying insulating layer with contact openings to said devices.