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US3983510A
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Semiconductor double heterostructure laser device and method of making the same
Assignee: NEC Corp
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Filing: 1975-06-06
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Granted: 1976-09-28
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Expires: 1995-06-06
Abstract
Abstract A strip-geometry semiconductor double-heterostructure laser device includes an n-GaAs substrate on which a first layer of n-Al x Ga 1-x As and a second layer of p-AlyGa 1-y As are formed by epitaxial growth techniques. A third layer of heat- and Ga melt resistant material of narrow stripe geometry is formed on the second layer. After the second layer and part of the first layer, except for their stripe portions, are meltbacked by Ga melt liquid, a fourth layer of n-Al z Ga 1-z As is formed by epitaxial growth techniques of the same Ga melt liquid in one process.
Inventors
- 👤 Izuo Hayashi
- 👤 Yasuo Nannichi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:51
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H10; H10H; H10H20/00; H10H20/80; H01S5/2275; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/05; Y10S148/072; Y10S148/108; Y10S438/00; Y10S438/955
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
145 words
A method of making a stripe-geometry semiconductor double-heterostructure laser device comprising the steps of: a. providing an n-GaAs substrate; b. liquid-epitaxially growing a first layer of n-Al x Ga 1-x As on one surface of said substrate; c. epitaxially growing a second layer of p-Al y Ga 1-y As on said first layer; d. forming a third layer of heat- and Ga melt-resistant material of narrow stripe geometry on said second layer; and e. bringing a gallium melt liquid of a composition to be formed into a fourth layer of n-Al z Ga 1-z As on said second layer into contact with said second and third layers, said second layer except for the area coated with said third layer, and part of said first layer in the thickness direction being meltbacked by Ga melt liquid, and then forming said fourth layer by epitaxial growth techniques.
Claim 2
Independent Claim
145 words
A method of making a stripe-geometry semiconductor double-heterostructure laser device comprising the steps of: a. providing an n-GaAs substrate; b. liquid-epitaxially growing a first layer of n-Al x Ga 1-x As on one surface of said substrate; c. epitaxially growing a second layer of p-Al y Ga 1-y As on said first layer; d. forming a third layer of heat- and Ga melt-resistant material of narrow stripe geometry on said second layer; and e. bringing a gallium melt liquid of a composition to be formed into a fourth layer of n-Al z Ga 1-z As on said second layer into contact with said second and third layers, said second layer except for the area coated with said third layer, and part of said first layer in the thickness direction being meltbacked by Ga melt liquid, and then forming said fourth layer by epitaxial growth techniques.
Claim 3
Dependent Claim
35 words
The method of claim 1, in which said heat and Ga melt-resistant material is selected from the group consisting of aluminum oxide, silicon oxide, silicon nitride, silicon carbide, tantalum oxide, and an oxide of AlGaAs.
Claim 4
Dependent Claim
38 words
The method of claim 1, in which step (e) also includes the step of first increasing the temperature of the crystal prior to meltbacking and thereafter gradually decreasing the temperature of the crystal to form said fourth layer.
Claim 5
Dependent Claim
32 words
The method of claim 3, further including the step of bringing a second gallium melt liquid into contact with said fourth layer to form a fifth p-GaAs layer on said fourth layer.
Claim 6
Dependent Claim
126 words
A stripe-geometry semiconductor double-heterostructure laser device including: an n-GaAs substrate; a first layer of n-Al x Ga 1-x As and a second layer of p-Al y Ga 1-y As, formed on one surface of said substrate, by liquid epitaxial growth techniques; a third layer of heat- and Ga melt-resistant material of narrow stripe geometry formed on said second layer; a fourth layer of n-Al z Ga 1-z As formed by epitaxial growth techniques after said second layer and part of said first layer in its thickness direction, except for the stripe portions of said first and second layers, are meltbacked by Ga melt liquid; and conductor layers in ohmic contact with the other surface of said substrate and with the surface of said fourth layer, respectively.
Claim 7
Dependent Claim
126 words
A stripe-geometry semiconductor double-heterostructure laser device including: an n-GaAs substrate; a first layer of n-Al x Ga 1-x As and a second layer of p-Al y Ga 1-y As, formed on one surface of said substrate, by liquid epitaxial growth techniques; a third layer of heat- and Ga melt-resistant material of narrow stripe geometry formed on said second layer; a fourth layer of n-Al z Ga 1-z As formed by epitaxial growth techniques after said second layer and part of said first layer in its thickness direction, except for the stripe portions of said first and second layers, are meltbacked by Ga melt liquid; and conductor layers in ohmic contact with the other surface of said substrate and with the surface of said fourth layer, respectively.
Claim 8
Dependent Claim
36 words
The laser device of claim 5, in which said heat and Ga melt-resistant material is selected from the group consisting of aluminum oxide, silicon oxide, silicon nitride, silicon carbide, tantalum oxide, and an oxide of AlGaAs.
References Cited (Backward Citations)
US3833435A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-09-28 | 1980-03-29 | 1980-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-09-28 | 1984-03-29 | 1984-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-09-28 | 1988-03-29 | 1988-09-28 | $7700.00 | Window Closed / Lapsed |