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US3983076A
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N-type amorphous semiconductor materials
Assignee: Energy Conversion Devices Inc
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Filing: 1973-07-02
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Granted: 1976-09-28
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Expires: 1993-07-02
Abstract
Abstract New amorphous semiconductor and chalcogenide compositions are provided exhibiting n-conductivity characteristics. Chalcogenide compositions, which are normally formed as p-type materials, are converted to n-type materials or are initially formed as n-type materials, by elevating the temperatures thereof below their crystallization temperature and substantially in excess of the temperature at which its conductivity at room temperature versus annealing temperature curve decreases sharply from a relatively high constant value and allowing the same to cool to room temperature.
Inventors
- 👤 Howard K. Rockstad
- 👤 Richard A. Flasck
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 12:24
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D62/402; H10D62/80; H10D99/00
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
85 words
An n-type chalcogenide amorphous material as measured by the Seebeck coefficient, said n-type material being that obtained by subjecting a normally p-type amorphous chalcogenide composition to a temperature below its crystallization temperature and which is located at a point on its room temperature versus annealing temperature curve which is sufficiently in excess of the temperature at which its conductivity at room temperature decreases sharply from a relatively high constant value that its Seebeck coefficient has a negative value, and then cooling the same to room
Claim 2
Dependent Claim
85 words
An n-type chalcogenide amorphous material as measured by the Seebeck coefficient, said n-type material being that obtained by subjecting a normally p-type amorphous chalcogenide composition to a temperature below its crystallization temperature and which is located at a point on its room temperature versus annealing temperature curve which is sufficiently in excess of the temperature at which its conductivity at room temperature decreases sharply from a relatively high constant value that its Seebeck coefficient has a negative value, and then cooling the same to room
Claim 3
Dependent Claim
81 words
The n-type amorphous chalcogenide material of claim 1 and where the composition has at least about 2% of one or more of the chalcogenide elements of sulfur, selenium and tellurium and has the formula: Ge.sub.x Te.sub.y D.sub.z E.sub.m where, Ge=germanium Te=tellurium D=selenium or sulfur or combinations of both E=arsenic or antimony or combinations of both and, x is between and including 0 and 98% (atomic) y is between and including 0 and 90% z is between and including 0 and 75%
Claim 4
Dependent Claim
21 words
The n-type chalcogenide material of claim 1 which consists essentially of a mixture of germanium, selenium and tellurium in atomic percentages
Claim 5
Dependent Claim
33 words
The n-type chalcogenide material of claim 3 which consists essentially of a mixture of germanium, selenium and tellurium in atomic percentages determined by the areas encompassed by the inclined hatched areas of FIG.
Claim 6
Dependent Claim
21 words
The n-type chalcogenide material of claim 1 which consists essentially of a mixture of germanium, tellurium and arsenic in atomic percentages
Claim 7
Dependent Claim
21 words
The n-type chalcogenide material of claim 1 which consists essentially of a mixture of germanium, selenium and arsenic in atomic percentages
Claim 8
Dependent Claim
21 words
The n-type chalcogenide material of claim 1 which consists essentially of a mixture of germanium, selenium and antimony in atomic percentages
Claim 9
Dependent Claim
13 words
The n-type chalcogenide material of claim 1 which is a sputter or vapor
Claim 10
Dependent Claim
13 words
The n-type chalcogenide material of claim 2 which is a sputter or vapor
Claim 11
Dependent Claim
18 words
The n-type chalcogenide material of claim 4 which is a sputter or vapor deposited film on a substrate.
References Cited (Backward Citations)
US3343972A
Cited
US3348045A
Cited
US3360649A
Cited
US3451794A
Cited
US3440068A
Cited
US3773529A
Cited
US3511993A
Cited
US3820968A
Cited
US3771073A
Cited
US3709813A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-09-28 | 1980-03-29 | 1980-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-09-28 | 1984-03-29 | 1984-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-09-28 | 1988-03-29 | 1988-09-28 | $7700.00 | Window Closed / Lapsed |